CNY31 Search Results

CNY31

Contextual Info: E SOLID. STATE Dl De | 3075DÔ1 001^334 fl | Optoelectronic Specifications Photon Coupled Isolator CNY31 Ga As Infrared Emitting Diode & NPN Silicon Photo-Darlington Amplifier The GE Solid State CNY31 is a gallium arsenide, infrared emitting diode coupled with a silicon photo-darlington amplifier in a low-cost

Contextual Info: flUALITY T E C H N O L O G I E S CORP S7E ]> O O O ^ Q ij 7 fl3 I ÖTY European “Pro Electron” Registered T y p e s - CNY31 Optoisolator G aA s Infrared Emitting Diode and N PN Silicon Photo-Darlington Amplifier T h e CNY31 is a g a lliu m a rs e n id e , in f r a r e d e m ittin g d io d e

Contextual Info: 3875081 G E SOLID STATE 0 1E 19834 D Optoelectronic Specifications _ HA R R I S S Ef l l COND S E C T OR 43G2271 37E DDSTSTh I HAS Photon Coupled Isolator CNY31 Ga As Infrared E m ittin g D iode & NPN Silicon P h oto-D arlington A m plifier T he G E Solid S tate CNY31 is a gallium arsenide, infrared em itting

Contextual Info: European “Pro Electron” Registered T y p e s _ CNY31 Optoisolator G aAs Infrared Emitting Diode and NPN Silicon Photo-Darlington Amplifier T h e CNY31 is a gallium arsenide, in fra re d em itting diode co u p led with a silicon pho to -D arlin g to n am plifier in a lowcost plastic package with lead spacing com patible to a dual

Contextual Info: European “Pro Electron" Registered Types CNY31 Optoisolator G aAs Infrared Emitting Diode and NPN Silicon Photo-Darlington Amplifier T h e CNY31 is a g a lliu m a rs e n id e , in f r a r e d e m ittin g d io d e c o u p le d w ith a silic o n p h o to -D a rlin g to n a m p lifie r in a low c o st p la stic p a c k a g e w ith le a d s p a c in g c o m p a tib le to a d u a l

p421 coupler

Abstract: MOC604A CNY17-3Z TLP250 MOSFET DRIVER application note TLP250 MOSFET DRIVER p421 Photocoupler CNY17-2Z TRANSISTOR AC125 TLP181 SMD 11-4C1 TYPE moc3041 application note
Contextual Info: Photocouplers PRODUCT GUIDE New Products •Photorelay T The TLP227GA Series of general-purpose photorelays features devices whose OFF-state voltage 400 V is superior to that of TLP227G Series devices (350 V). This superior OFF-state voltage allows larger safety

M0C3022

Abstract: M0C3021 M0C3023 H22L BPW 56 photo H11FI H74AI H11M4 21ab H2482
Contextual Info: Quick-Reference Product Guide Selection Charts INFRARED EMITTERS TYPE NO. y & 54A S Ä j f # / 54 / JV V / jL & s /s s /^ s ^ 1 N 6 26 4 1N 6 26 S 1 N6266 CQ X 1 4 CQ X1 5 CQX16 CQ X1 7 FSD1 FSD 2 FSD3 F5E1 FSE2 F5E3 F5F1 F5G1 IE D 5 5 C L ED S5 B LED56 L ED SSC F

MOC5010

Abstract: MOC7811 TIL31A TIL34A TIL903-1 OP8815 SCS11C3 h2181 TIL99 TIL143
Contextual Info: - Quick-Reference Product Guide Industry Replacement Guide T h e su g g ested r e p la c e m e n ts re p re s e n t w h a t is b e lie v e d to b e e q u iv a le n ts f o r th e p ro d u c ts listed. H a rris a ssu m e s n o re sp o n sibility a n d d o e s n o t g u a ra n te e th a t th e re p la c e m e n ts a re exact, b u t

H0A0872-n55

Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Contextual Info: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1

TLP181 equivalent

Abstract: NEC ps2401 TLP3022 equivalent TLP541G "cross-reference" s13md1 sharp TLP3061 equivalent TLP560J "cross-reference" PC357 "cross-reference" TLP734 equivalent pc716 sharp
Contextual Info: 10. Cross Reference Code Definitions A : D irect R eplacem ent B : M inor Electrical Difference C : M inor M echanical Difference D : M ajo r Electrical Difference E : M ajo r M echanical D ifference F : Call T O S H IB A * G : No Equivalent The fo llo w in g Cross-Reference is m eant to

H11V3

Abstract: H11V1
Contextual Info: _ TH OM SO N/ DISTRIBUTOR SñE D • T0Ebfl73 O n D S ? 4 ci ■ TCSK O ptoelectronic Products O ptoisolators/O ptocouplers Continued Description S u rg e Isolation Voltage R M S Min H11B1 Photo 4 000V 500% H 11B2 Darlington 4000V 200% H 1 1B 3 Output

M0C3011

Abstract: H74AI h11m BPW3 H1IJ H11M4 photo darlington L14F2 HIIAAI M0C3010 MC726
Contextual Info: Quick-Reference Product Guide Selection Charts INFRARED EMITTERS j ß /> * ff /' //* * ,y / TYPE NO. PAGE NO. MIN. PQ @ lF = 100mA MAX. VF@ lp= 100«iA PEAK EMISSION WAVELENGTH TYP. n METERS RISE TIME TYP. mSEC FALL TIME TYP./zSEC MAX. PD mW MAX. If CONT.

MOC3Q11

Abstract: h11m qx14 21B6 LED55C H11M1 22b4 22L2 NY33 H11M4
Contextual Info: Quick-Reference Product Guide HARRIS OPTOELECTRONIC Devices Index to Types Type No. ' 4 Page No. Type No. Page No. IN6264 IN6265 IN 6266 4N25 4N25A 4N26 4N27 4N28 4N29 4N29A 166 166 168 196 196 196 196 196 198 198 F5F1 F5G1 GE3009 GE3010 GE3011 GE3Ô12 GE3020

CNY17 III

Abstract: H11M1 H11M4 SL5504 H21B5 CNX35 GE3022 l14g1-l14g2-l14g3 CNY47
Contextual Info: Quick-Reference Product Guide _ HARRIS OPTOELECTRONIC Devices Index to Types Type No. 4 Page No. Type No. Page No. Type No. Page No. Type No. Page No. IN6264 IN6265 IN6266 4N25 4N25A 4N26 4N27 4N28 4N29 4N29A 166 166 168 196 196 196

KT853

Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B
Contextual Info: Cross Reference Competition Honeywell P/N P/N 100 H 0A0871-N55 50B2-4204 CALL PHOTODIODES, T 0 1 8 T A LL PIN 101 HOA1872-12 BC TR AN S A S S Y . PTX 5082-4205 CALL PHOTODIODES. P P PIN 10501 H 0A 1872-1 BC TRAN S A S S Y , PTX 5082-4207 CALL PHOTODIODES. T 0 1 8 T A LL PIN

APY12

Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP