CC 1M16 Search Results

Contextual Info: PRELIMINARY MICRON I TECHNOLOGY, 1 6 M l n b XAM INC. FEATURES 50-Pin TSOP V cc DQ0 DQ1 V ssQ DQ2 DQ3 V ccQ DQ4 DQ5 V ssQ DQ6 DQ7 V ccQ DQ M L W E# C AS# RAS# C S# BA A10 A0 A1 A2 A3 V cc MARKING 1M16 • Plastic Package - OCPL 50-pin TSOP 400 mil TG • Timing

WF2M16-XXX5

Contextual Info: WF2M16-XXX5 HI-RELIABILITY PRODUCT 2Mx16 FLASH MODULE, SMD 5962-97610 PRELIMINARY* FEATURES • Data Polling and Toggle Bit feature for detection of program or erase cycle completion. ■ Access Times of 90, 120, 150ns ■ Packaging: • 56 lead, Hermetic Ceramic, 0.520" CSOP Package 207 .

cc 1m16

Abstract: WF4M16-XDTX5
Contextual Info: WF4M16-XDTX5 HI-RELIABILITY PRODUCT 2x2Mx16 5V FLASH MODULE ADVANCED* FEATURES • Data Polling and Toggle Bit feature for detection of program or erase cycle completion. ■ Access Time of 90, 120, 150ns ■ Packaging: • 56 Lead, Hermetic Ceramic, 0.520" CSOP Package 213 .

Contextual Info: WF2M16-XXX5 HI-RELIABILITY PRODUCT 2Mx16 FLASH MODULE, SMD 5962-97610 pending PRELIMINARY* FEATURES • Data Polling and Toggle Bit feature for detection of program or erase cycle completion. ■ Access Times of 90, 120, 150ns ■ Packaging: • 56 lead, Hermetic Ceramic, 0.520" CSOP (Package 207).

csop

Abstract: WF2M16-XXX5
Contextual Info: WF2M16-XXX5 HI-RELIABILITY PRODUCT 2Mx16 FLASH MODULE, SMD 5962-97610 pending PRELIMINARY* FEATURES • Data Polling and Toggle Bit feature for detection of program or erase cycle completion. ■ Access Times of 90, 120, 150ns ■ Packaging: • 56 lead, Hermetic Ceramic, 0.520" CSOP (Package 207).

Contextual Info: WF4M16-XDTX5 HI-RELIABILITY PRODUCT 2x2Mx16 5V FLASH MODULE ADVANCED* FEATURES • Data Polling and Toggle Bit feature for detection of program or erase cycle completion. ■ Access Time of 90, 120, 150ns ■ Packaging: • 56 Lead, Hermetic Ceramic, 0.520" CSOP Package 213 .

Contextual Info: WF4M16-XDTX5 H i-R£Ü A SIÜ TY PRODUCT 2x2Mx16 5V FLASH MODULE ADVANCED* FEATURES D ata P o llin g and T o g g le B it fe a tu re fo r d e te c tio n of prog ram • A c c ess T im e of 9 0 , 1 2 0 , 1 50ns ■ • ■ or era se cycle com p letio n . Packaging:

T835

Contextual Info: H ¡ 5»h P i ' r i i » n i i d i n i \ S 4 C I M I 6L:0 A I M X I i C M O S l K \ M \S4I.C I M I 610 I MX 16 CM US LDO DK/l M Preliminary information Features • O r g a n iz a t io n : 1 ,0 4 8 ,5 7 6 w o r d s x 16 b its 1 R e a d - m o d if y - w r it e

Contextual Info: Preliminary information •■ I l AS4C1M16E5 AS4LC1M16E5 A 5V/3V l M x l ó CMOS DRAM EDO Features • Organization: 1,048,576 words x 16 bits • High speed ■Read-modify-write >TTL-compatible, three-state DQ >JEDEC standard package and pinout - 4 5 /5 0 /6 0 ns RA S access tim e

Contextual Info: H igh P erform ance 1M X 16 CM OS DRAM II A S4C 1M I6E 0 AS4LC1M16EÖ II 1 M X 1 6 CM O S EDO DRAM Preliminary information Features • Read-modify-write • TTL-compatible, three-state I/O • JEDEC standard package and pinout - 400 mil, 42-pin SOJ • 5V pow er supply 4C1M 16E0

RR 113001

Abstract: 1M16E5
Contextual Info: Advance information •■ AS4VC1M16E5 A 2.5V lM x 16 CMOS lntelliwatt,v DRAM EDO Features 1 1024 refresh cycles, 16 ms refresh interval • Organization: 1,048,576 words x 16 bits • High speed - RAS-only or CAS-before-RAS refresh or self refresh 1Read-modify-write

Contextual Info: H igh Performance 1MX16 CMOS DRAM •■ II AS4C1M16E0 AS4LC1M16E0 l M x 16 CMOS EDO DRAM Preliminary information Features • Read-modify-write • TTL-compatible, three-state I/O • JEDEC standard package and pinout - 400 mil, 42-pin SOJ • SV power supply 4C1M16E0

AS4C1M16F5

Contextual Info: Preliminary information •■ AS4C1M16F5 1 5V lM x 16 CM OS DRAM fast page mode Features • O rg an izatio n : 1 ,0 4 8 ,5 7 6 w o rd s • H ig h speed X • 1024 refresh cycles, 16 m s refresh in terv al 16 bits - K A S -only o r C A S-before-K A S r e f r e s h

Contextual Info: Discontinued 8/98 » las! order; 12/98 last ship IB M 1 1 M 1 6 7 3 5 B IB M 1 1 M 1 6 7 3 5 C 16M x 72 DRAM Module Features • 168-Pin JEDEC-Standard 8-Byte Dual In-Line Memory Module • Optimized for ECC applications • System Performance Benefits:

AS4C1M16ES

Abstract: 4C1M16E5 LR 3441 1MX16 AS4C1M16E5 LMZ 9 4C1M16E5-60
Contextual Info: H ig h P e r fo r m a n c e lM x 16 CM OS DRAM » II A S4C 1M 16E 5 I lM x 16 CMOS EDO DRAM Preliminary information Features • Organization: 1,048,576 words x 16 bits • High speed • 1024 refresh cydes, 16 ms refresh interval - RAS-only o r CAS-before-RAS refresh

Contextual Info: UNLESS OTHERWISE NOTED REV. AA DIMENSIONS ARE IN INCHES — N o OF POS X .0 5 0 + .100 [1 .2 7 ] [2 .5 4 ] ONE PLACE DECIMALS ± TWO PLACE DECIMALS ± —|(N o OF POS X .0 5 0 ) + [1 .2 7 ] .1 .01 TOLERANCES ARE: N o OF PO S ITIO NS - 0 5 THRU - 5 0 L JT

Contextual Info: MOTORCLA SC DIODE S/ OP TO 14E D § k3L72SS o o flo c n a s I _ Order this dita sheet by MPZ4728/D MOTOROLA SEM ICO N DU CTO R TECHNICAL DATA Designer's Data Sheet 1.0 W att S u rm e tic 30 S ilic o n Zener D io d e s . . a complete series of 1,0 watt zener diodes with limits and operating characteristics

4C1M16

Abstract: 1MX16 4LC1M16
Contextual Info: H ig h P erfo rm a n ce 1M X 16 CMOS DRAM AS4C1 M l 6E0 AS4LC1M16E0 l M x 16 CMOS EDO DRAM Preliminary information Features • Organization: 1 ,0 4 8 ,5 7 6 words x 16 bits • H igh speed • Read-modify-write • TTL-compatibie, three-state I/O • JEDEC standard package and pinout

MC6504

Abstract: xn203 MC68040-25 led 7 doan MC68LC040 hall effect 44e MC68040RC25 ms8040 USPA AC M68040
Contextual Info: ,VU X )4()l I M / A I ) C68040 Rc\ I MC68EC040V MICROPROCESSORS USER'S MANUAL Introduction Integer Unit M e m o ry M anagem ent Unit (Except M C 6 8 E C 0 4 0 & M C 6 8 E C 0 4 V ) Instruction and Data Caches Signal Description IEEE 1149.1 Test Access Port (JTAG)

13001 LZ

Abstract: SR 13001 PA 13001
Contextual Info: Advance information •■ II AS4VC1M16E5 2.5V 1Mx 16 CMOS lntelliwatt,v DRAM EDO Features • Organization: 1 ,0 4 8 ,5 7 6 w ords • H igh speed X • 10 24 refresh cycles, 16 m s refresh interval 16 bits - RAS-only or CAS-before-RAS refresh or self refresh

B9535

Abstract: 1M16
Contextual Info: PRELIMINARY MT4LC1 M16H5 1 MEG x 16 BURST EDO DRAM BURST EDO DRAM 1 MEG x 16 FEATURES PIN ASSIGNMENT Top View • B urst order, interleave or linear, p ro gram m ed by executing W CBR cycle after initialization • Sin gle p o w er su p p ly : +3.3V ±5%

4LC1M16E5

Abstract: 4C1M16E5 j13000 j130007a 1m16e 4C1M16E5-60 J1-30007-A as4c1m16e5 4lc1m16e5-60 AS4LC1M16E5
Contextual Info: H ig h P e rfo rm a n c e l M x 16 CM OS DRAM » H A S4C1M 16E5 AS4LC1M 16E5 A l M x 16 CM OS EDO DRAM Preliminary information Features • Organization: 1,048,576 words x 16 bits • High speed • 1 0 2 4 re fre sh cycles, 16 m s re fre sh in te rv a l - RAS-only or CAS-before-RAS refresh

1m16e

Contextual Info: AS4C1M16F5 5V 1Mx16 CMOS DRAM fast-page mode Features • Organization: 1,048,576 words × 16 bits • High speed - 50/60 ns RAS access time - 20/25 ns fast page cycle time - 13/17 ns CAS access time • Low power consumption - Active: 880 mW max (AS4C1M16E0-60)

4lc1m16e5-6

Contextual Info: H ig h P e r f o r m a n t e lM x 16 CM OS DRAM » H A S4C 1M 16E 5 A S4L C 1M 16E 5 A 1 M X 16 CMOS EDO DRAM Preliminary information Features • O rg a n iz a tio n : 1,048,576 w o r d s x 16 b its • 1 0 2 4 re fre s h cycles, 16 m s re fre s h in terv al