1M16E5 Search Results

as4c1m16e5-60jc

Abstract: as4c1m16e5-50jc
Contextual Info: $6&0  $XJXVW  Š 9 0î &026 '5$0 ('2 HDWXUHV • Organization: 1,048,576 words x 16 bits • High speed • 1024 refresh cycles, 16 ms refresh interval - RAS-only or CAS-before-RAS refresh Read-modify-write • TTL-compatible, three-state DQ

as4c1m16e5

Abstract: AS4C1M16E5-60TC AS4LC1M16E5 as4c1m16e5-50jc
Contextual Info: 1M16E5 5V 1Mx16 CMOS DRAM EDO Features • 1024 refresh cycles, 16 ms refresh interval • Organization: 1,048,576 words × 16 bits • High speed - RAS-only or CAS-before-RAS refresh Read-modify-write • TTL-compatible, three-state DQ • JEDEC standard package and pinout

AS4LC1M16E5

Abstract: AS4LC1M16E5-50JC
Contextual Info: 1M16E5 3V 1Mx16 CMOS DRAM EDO Features • Organization: 1,048,576 words × 16 bits • High speed • Read-modify-write • TTL-compatible, three-state DQ • JEDEC standard package and pinout - 50/60 ns RAS access time - 20/25 ns hyper page cycle time

AS4LC1M16E5-60TC

Contextual Info: $6/&0  90ð&026'5$0 ('2 HDWXUHV • Organization: 1,048,576 words x 16 bits • High speed • TTL-compatible, three-state DQ • JEDEC standard package and pinout - 50/60 ns RAS access time - 20/25 ns hyper page cycle time - 12/15 ns CAS access time

RR 113001

Abstract: 1M16E5
Contextual Info: Advance information •■ 1M16E5 A 2.5V lM x 16 CMOS lntelliwatt,v DRAM EDO Features 1 1024 refresh cycles, 16 ms refresh interval • Organization: 1,048,576 words x 16 bits • High speed - RAS-only or CAS-before-RAS refresh or self refresh 1Read-modify-write

4C1M16E5

Abstract: AS4LC1M16E5-60TC AS4LC1M16E5 4C1M1
Contextual Info: 1M16E5 3V 1Mx16 CMOS DRAM EDO Features • Organization: 1,048,576 words × 16 bits • High speed • Read-modify-write • TTL-compatible, three-state DQ • JEDEC standard package and pinout - 50/60 ns RAS access time - 20/25 ns hyper page cycle time

G1117S

Abstract: MT4LC1M165
Contextual Info: ADVANCE ft 1M16E5 S 1 MEGx 16 DRAM S£MCONOUCTOa INC. DRAM 1 MEG x 16 DRAM 3.3V EDO PAGE MODE, OPTIONAL SELF REFRESH FEATURES PIN ASSIGNMENT (Top View) 44/50-Pin TSOP (DD-6) Œ Œ Œ CE CE Œ Œ Œ Œ Œ Œ 1 2 3 4 S 6 7 8 9 10 11 50 49 48 47 46 45 44

Contextual Info: A 1M16E5 3V 1Mx 16 CMOS DRAM EDO Features • Organization: 1 ,0 4 8 ,5 7 6 words x 16 bits • High speed •TTL-com patible, three-state DQ ■JEDEC standard package and pinout - 5 0 / 6 0 ns RAS access time - 2 0 /2 5 ns hyper page cycle time - 1 2 /1 5 ns CAS access time

as4c1m16e5-60jc

Abstract: as4c1m16e5 AS4C1M16E5-45JC
Contextual Info: $6&0  90ð&026'5$0 ('2 HDWXUHV • Organization: 1,048,576 words x 16 bits • High speed • TTL-compatible, three-state DQ • JEDEC standard package and pinout - 45/50/60 ns RAS access time - 20/20/25 ns hyper page cycle time - 10/12/15 ns CAS access time

Contextual Info: $GYDQFHLQIRUPDWLRQ $66&0  90ð&026,QWHOOLZDWWŒ'5$0 ('2 HDWXUHV • 1024 refresh cycles, 16 ms refresh interval • Organization: 1,048,576 words x 16 bits • High speed - RAS-only or CAS-before-RAS refresh or self refresh • Read-modify-write

AS4LC1M16E5-60TC

Abstract: AS4LC1M16E5 AS4LC1M16E5-60JC
Contextual Info: 1M16E5 Š 3V 1Mx16 CMOS DRAM EDO Features • Organization: 1,048,576 words × 16 bits • High speed • Read-modify-write • TTL-compatible, three-state DQ • JEDEC standard package and pinout - 50/60 ns RAS access time - 20/25 ns hyper page cycle time

Contextual Info: Advance information •■ AS4SC1M 16E5 A 1,8V 1M x 16 C M O S Intelliwatt1'' DRAM EDO Features • Organization: 1,048,576 words x 16 bits • High speed • 1 0 2 4 refresh cycles, 16 m s refresh interval - RAS-only or CAS-before-RAS refresh or self refresh

Contextual Info: 1M16E5 5V 1Mx16 CMOS DRAM EDO Features - RAS-only or CAS-before-RAS refresh or self-refresh • Organization: 1,048,576 words × 16 bits • High speed • Read-modify-write • TTL-compatible, three-state DQ • JEDEC standard package and pinout