M16E5 Search Results

MT4LC1M165

Contextual Info: MT4LC1 M16E5 L 1 MEG X 16 DRAM (M IC R O N DRAM 1 M E G x 1 6 DRAM 3.3V, EDO PAGE MODE, OPTIONAL EXTENDED REFRESH m FEATURES PIN ASSIGNMENT (Top View) • JE D E C - and in d u stry-stan d ard x l 6 tim ing , fu nction s, pin ou ts and p ackages • • •

Contextual Info: 1 MEG x 16 EDO DRAM DRAM M16E5 For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • JEDEC- and industry-standard x l6 timing, functions, pinouts and packages • High-performance CMOS silicon-gate process

Marking E5

Contextual Info: 1 MEG x 16 EDO DRAM DRAM M16E5 For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT Top View • JEDEC- an d in d u stry -sta n d a rd x l6 tim ing, functions,

Contextual Info: 1 MEG x 16 EDO DRAM M IC R O N I TECHNOLOGY, INC. DRAM M16E5 For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT Top View • JEDEC- an d in d u stry -sta n d a rd x l6 tim ing, functions,

M16E5

Contextual Info: PRELIMINARY D R A M 1 M E G x 1 6 D R A M 3.3V, EDO PAGE MODE, OPTIONAL SELF REFRESH FEATURES • JEDEC- and industry-standard x l6 timing, functions, pinouts and packages • High-perform ance CM OS silicon-gate process • Single +3.3V ±0.3V power supply

Contextual Info: M16E5 L 1 MEG X 16 DRAM MICRON I TECHNOLOGY INC 1 M E G x 1 6 DRAM DRAM 3.3V, EDO PAGE MODE, OPTIONAL EXTENDED REFRESH • JEDEC- and industry-standard xl6 timing, functions, pinouts and packages • High-performance CMOS silicon-gate process • Single +3.3V ±0.3V power supply

Contextual Info: PRELIMINARY |U |IC R O N 1, 2 MEG x 32 DRAM DIMMs DRAM MODULE M T2L D 132U X M T4L D 232U (X ) FEATURES • JEDEC pinout in a 100-pin, dual in-line memory module (DIMM) • 4MB (1 Meg x 32) and 8MB (2 Meg x 32) • State-of-the-art, high-performance CMOS silicon-gate

Contextual Info: MICRON I M16E5 S 1 MEG X 16 DRAM TECHNOLOGY, MC. 1 MEG x 16 DRAM DRAM 5.0V, EDO PAGE MODE, OPTIONAL SELF REFRESH FEATURES • JEDEC- and industry-standard xl6 timing, functions, pinouts and packages • High-perform ance CMOS silicon-gate process • Single +5.0V +10% pow er supply

Contextual Info: 1 MEG x 16 EDO DRAM MICRON I TECHNOLOGY, INC. n p A M M16E5 M16E5 U r tM IV I FEATURES • JEDEC- and industry-standard xl6 timing, functions, pinouts and packages • High-performance CMOS silicon-gate process • Single pow er supply +3.3V +0.3V or 5V +10%

G1117S

Abstract: MT4LC1M165
Contextual Info: ADVANCE ft M16E5 S 1 MEGx 16 DRAM S£MCONOUCTOa INC. DRAM 1 MEG x 16 DRAM 3.3V EDO PAGE MODE, OPTIONAL SELF REFRESH FEATURES PIN ASSIGNMENT (Top View) 44/50-Pin TSOP (DD-6) Œ Œ Œ CE CE Œ Œ Œ Œ Œ Œ 1 2 3 4 S 6 7 8 9 10 11 50 49 48 47 46 45 44

marking 1PC 6-pin

Contextual Info: 1 MEG x 16 EDO DRAM MICRON I TECHNOLOGY. INC. DRAM M16E5 M16E5 FEATURES • JEDEC- and industry-standard xl6 timing, functions, pinouts and packages • High-performance CMOS silicon-gate process • Single power supply +3.3V ±0.3V or 5V ±10%

4LCIM16E5-50

Abstract: 4LCIM16E5 4LC1M16E5 AS4LC1M16ES j130007a 4C1M16E5-60 AS4CIM16E5 j13000
Contextual Info: Preliminary information Features • 1024 refresh cycles, 16 ms refresh interval • Organization: 1,048,576 w ords x 16 bits • High speed - RAS-only or CAS-before-RAS refresh • Read-modify-write • TTL-compatible, three-state DQ • JEDEC standard package and pinout