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Micron Technology Inc MT4C1M16E5DJ-6 DRAM Chip EDO 16Mbit 1Mx16 5V 42-Pin SOJ Tray
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MT4C1M16E5DJ-6		962			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Micron Technology Inc MT4C1M16E5TG-6 DRAM Chip EDO 16Mbit 1Mx16 5V 44-Pin TSOP Tray
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MT4C1M16E5TG-6		725			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Alliance Memory Inc AS4C1M16E5-60TC DRAM Chip EDO 16Mbit 1Mx16 5V 44-Pin TSOP-II
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	AS4C1M16E5-60TC		179			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Micron Technology Inc MT4C1M16E5
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MT4C1M16E5		85			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Alliance Memory Inc AS4C1M16E5-60TI DRAM Chip EDO 16M-Bit 5V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	AS4C1M16E5-60TI		16			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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4C1M16E5 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
4lc1m16e5-6 Contextual Info: H ig h P e r f o r m a n t e lM x 16 CM OS DRAM » H A S4C 1M 16E 5 A S4L C 1M 16E 5 A 1 M X 16 CMOS EDO DRAM Preliminary information Features • O rg a n iz a tio n : 1,048,576 w o r d s x 16 b its • 1 0 2 4 re fre s h cycles, 16 m s re fre s h in terv al	OCR Scan	16e5-60 4lc1m16e5-60 42-pin as4c1m16es-50jc +5as4c1m16e5-60jc as4lc1m16e5-50tc -60tc 1m16e0 4lc1m16e5-6	PDF
4LC1M16E5 Abstract: 4C1M16E5 j13000 j130007a 1m16e 4C1M16E5-60 J1-30007-A as4c1m16e5 4lc1m16e5-60 AS4LC1M16E5 Contextual Info: H ig h P e rfo rm a n c e l M x 16 CM OS DRAM » H A S4C1M 16E5 AS4LC1M 16E5 A l M x 16 CM OS EDO DRAM Preliminary information Features • Organization: 1,048,576 words x 16 bits • High speed • 1 0 2 4 re fre sh cycles, 16 m s re fre sh in te rv a l - RAS-only or CAS-before-RAS refresh	OCR Scan	as4c1m16e5 as4lc1m16e5 4c1m16e5-60 4lc1m16e5-60 +842-pin 4c1m16e5 44/50-pin 4lc1m16e5 j13000 j130007a 1m16e j1-30007-a	PDF
Contextual Info: High Perform ance lM x 16 CMOS DRAM A S4C 1M 16E 5 1 M x 16 CMOS EDO DRAM Preliminary information Features • 1024 refresh cydes, 16 ms refresh interval • Organization: 1,048,576 words x 16 bits • High speed - RAS-only or CAS-before-RAS refresh • Read-modify-write	OCR Scan	16e0-60 42-pin 71ps4c as4c1m16e5-60jc +11m16e0	PDF
4C1M16E5 Abstract: AS4LC1M16E5-60TC AS4LC1M16E5 4C1M1 Contextual Info: AS4LC1M16E5 3V 1Mx16 CMOS DRAM EDO Features • Organization: 1,048,576 words × 16 bits • High speed • Read-modify-write • TTL-compatible, three-state DQ • JEDEC standard package and pinout - 50/60 ns RAS access time - 20/25 ns hyper page cycle time	Original	as4lc1m16e5 42-pin 44/50-pin 4c1m16e5 +2as4lc1m16e5-60tc 4c1m1	PDF
AS4C1M16ES Abstract: 4C1M16E5 LR 3441 1MX16 AS4C1M16E5 LMZ 9 4C1M16E5-60 Contextual Info: H ig h P e r fo r m a n c e lM x 16 CM OS DRAM » II A S4C 1M 16E 5 I lM x 16 CMOS EDO DRAM Preliminary information Features • Organization: 1,048,576 words x 16 bits • High speed • 1024 refresh cydes, 16 ms refresh interval - RAS-only o r CAS-before-RAS refresh	OCR Scan	as4c1m16e5 1mx16 4c1m16e0-60 42-pin +912s4c1m16e5 capacitance15 as4c1m16e5-60jc 1m16e0 as4c1m16es 4c1m16e5 lr 3441 lmz 9 4c1m16e5-60	PDF
4LCIM16E5-50 Abstract: 4LCIM16E5 4LC1M16E5 AS4LC1M16ES j130007a 4C1M16E5-60 AS4CIM16E5 j13000 Contextual Info: Preliminary information Features • 1024 refresh cycles, 16 ms refresh interval • Organization: 1,048,576 w ords x 16 bits • High speed - RAS-only or CAS-before-RAS refresh • Read-modify-write • TTL-compatible, three-state DQ • JEDEC standard package and pinout	OCR Scan	42-pin 4c1m16e5 50-pin 4lc1m16e5 +124c1m16e5-60 4lc1m16e5-60 as4c1m16e5 as4lc1m16e5 -60jc 16e5-50jc 4lcim16e5-50 4lcim16e5 as4lc1m16es j130007a as4cim16e5 j13000	PDF