CSOP Search Results

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20888-2E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29LV800TE70/90/MBM29LV800BE70/90 • DESCRIPTION The MBM29LV800TE/BE are 8 M-bit, 3.0 V-only Flash memories organized as 1 M bytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29LV800TE/BE are offered in a 48-pin CSOP package. These devices are

cc 1m16

Abstract: WF4M16-XDTX5
Contextual Info: WF4M16-XDTX5 HI-RELIABILITY PRODUCT 2x2Mx16 5V FLASH MODULE ADVANCED* FEATURES • Data Polling and Toggle Bit feature for detection of program or erase cycle completion. ■ Access Time of 90, 120, 150ns ■ Packaging: • 56 Lead, Hermetic Ceramic, 0.520" CSOP Package 213 .

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20888-2E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29LV800TE70/90/MBM29LV800BE70/90 • DESCRIPTION The MBM29LV800TE/BE are 8 M-bit, 3.0 V-only Flash memories organized as 1 M bytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29LV800TE/BE are offered in a 48-pin CSOP package. These devices are

Contextual Info: C3 WF4M16-XDTX5 M/HITE /MICROELECTRONICS 2x2Mx16 5V FLASH MODULE ADVANCED* FEATURES • A ccess Tim e of 9 0 , 1 2 0 , 150ns ■ Packaging: • 56 Lead, H e rm e tic Ceram ic, 0.520" CSOP Package 213 . ■ D ata P olling and Toggle Bit fe a tu re fo r d e te ctio n of program

MBM29LV160TE70

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-5E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160TE/BE70/90 • GENERAL DESCRIPTION The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (1), 48-pin CSOP and 48-ball FBGA

Contextual Info: m WMF2M8-XOPX5 WHITE / M I C R O E L E C T R O N I C S 2Mx8 MONOLITHIC FLASH ADVANCED* FEATURES • Access Tim es of 9 0 ,1 2 0 ,150nS ■ 5 V o lt Read and W rite . 5V ± 10% S apply. ■ ■ Low Power CMOS Packaging: • 56 lead, Herm etic Ceramic, 0.520" CSOP Package 207 .

c60p06q

Abstract: diode 66a C60P05Q
Contextual Info: SCHOTTKY BARRIER DIODE 66A / 50~ 60v cboposq csopobq FEATURES “ Similar to TO-247AC TO-3P Case 5.3(.2Q9) 4.7U 85) o Dual Diodes - Cathode Common ° Low Forward Voltage Drop Low Power Loss, High Efficiency 2.24.087) 3.2U 26). 0.8(.031) M AX • High Surge Capability

MBM29

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20888-1E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29LV800TE/BE 70/90 • DESCRIPTION The MBM29LV800TE/BE are 8 M-bit, 3.0 V-only Flash memories organized as 1 M bytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29LV800TE/BE are offered in a 48-pin CSOP package. These devices are

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-2E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160TE/BE -70/90/12 • GENERAL DESCRIPTION The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (I), 48-pin CSOP and 48-ball FBGA

Contextual Info: White Electronic Designs WMF2M8-XXX5 2Mx8 MONOLITHIC FLASH, SMD 5962-97609 FEATURES Access Times of 90, 120, 150ns Low Power CMOS Packaging: Data# Polling and Toggle Bit feature for detection of program or erase cycle completion. • 56 lead, Hermetic Ceramic, 0.520" CSOP

Contextual Info: WMF2M8-XXX5 •lì Hi-R£LiASIÜTY PRODUCT 2Mx8 MONOLITHIC FLASH, SMD 5962-97609 pending PRELIMINARY* FEATURES ■ A cce ss T im e s o f 9 0 , 1 2 0 , 150ns 5 V o lt Read and W rite . 5 V ± 1 0 % S upply. ■ P ackaging: • 56 lead, H e rm e tic C era m ic, 0 .5 2 0 ” CSOP (Package 207).

Contextual Info: g WMF2M8-XXX5 M/HITE /MICROELECTRONICS 2Mx8 MONOLITHIC FLASH, SMD 5962-97609 pending PRELIMINARY* FEATURES • A cce ss Tim es o f 90, 120, 150ns ■ 5 V o lt Read and W r ite . 5V ± 10% Supply. ■ Packaging: • 56 lead, H erm e tic Ceramic, 0.520" CSOP (Package 207).

csop

Abstract: WF2M16-XXX5
Contextual Info: WF2M16-XXX5 HI-RELIABILITY PRODUCT 2Mx16 FLASH MODULE, SMD 5962-97610 pending PRELIMINARY* FEATURES • Data Polling and Toggle Bit feature for detection of program or erase cycle completion. ■ Access Times of 90, 120, 150ns ■ Packaging: • 56 lead, Hermetic Ceramic, 0.520" CSOP (Package 207).

Contextual Info: a WMF2M8-XXX5 WHITE /MICROELECTRONICS 2Mx8 MONOLITHIC FLASH, SMD 5962-97609 pending PRELIMINARY* FEATURES • A c c e s s T i m e s o f 9 0 , 1 2 0 , 1 50n s ■ 5 V o l t Read a n d W r i t e . 5 V + 1 0 % S u p p ly . ■ P a c k a g in g : • 56 le a d , H e r m e t i c C e ra m ic , 0 .5 2 0 " CSOP (P a c k a g e 207).

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160TE/BE70/90 • GENERAL DESCRIPTION The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (I), 48-pin CSOP and 48-ball FBGA

S25610

Abstract: WF2M16-XXX5
Contextual Info: White Electronic Designs WF2M16-XXX5 PRELIMINARY* 2Mx16 Flash MODULE, SMD 5962-97610 FEATURES „ „ „ „ „ „ „ Access Times of 90, 120, 150ns Packaging: • 56 lead, Hermetic Ceramic, 0.520" CSOP Package 207 . Fits standard 56 SSOP footprint. • 44 pin Ceramic SOJ (Package 102)*

MC20B

Abstract: CERAMIC SMALL OUTLINE PACKAGE CSOP MC16A MC20A MC24A MC28A MC28B csop16 csop
Contextual Info: Ceramic Small Outline Package CSOP 16 Lead Ceramic Small Outline Package NS package Number MC16A 2000 National Semiconductor Corporation MS101110 www.national.com Ceramic Small Outline Package (CSOP) August 1999 Ceramic Small Outline Package (CSOP) 20 Lead Ceramic Small Outline Package

AO-20

Contextual Info: TT WF4M8-XOPX5 l/VHITE M IC R O E LE C TR O N IC S 4Mx8 DUAUTHIC FLASH FIG. 1 ADVAN CED* FEATURES 56 CSOP TOP VIEW CS1 c A12 C A13C A14 □ A15 C NC L_ NC C NC Cl A 20 L A 19 C A 18 L A17C A 16 _ V:< L GND Z I.'0 6 L NC Z i/o? : NC I RY-BV I OÈÏ? WE Z

Contextual Info: bq24745 www.ti.com SLUS761 – DECEMBER 2007 SMBus-Controlled Level 2 Multi-Chemistry Battery Charger With Input Current Detect Comparator UGAT PHAS DCIN 27 26 25 24 23 22 ICREF 1 21 VDDP ACIN 2 20 LGATE VREF 3 19 PGND EAO 4 18 CSOP EAI 5 17 CSON FBO 6 16

Contextual Info: WMF2M8-XXX5 2Mx8 MONOLITHIC NOR FLASH, SMD 5962-97609 FEATURES  Low Power CMOS  Data# Polling and Toggle Bit feature for detection of program or erase cycle completion.  Access Times of 90, 120, 150ns  Packaging: • 56 lead, Hermetic Ceramic, 0.520" CSOP Package 207 .

FPT-48P-M19

Abstract: FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160TE/BE70/90 • GENERAL DESCRIPTION The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (I), 48-pin CSOP and 48-ball FBGA

Contextual Info: WF2M16-XXX5 HI-RELIABILITY PRODUCT 2Mx16 FLASH MODULE, SMD 5962-97610 pending PRELIMINARY* FEATURES • Data Polling and Toggle Bit feature for detection of program or erase cycle completion. ■ Access Times of 90, 120, 150ns ■ Packaging: • 56 lead, Hermetic Ceramic, 0.520" CSOP (Package 207).

Contextual Info: WF4M16-XDTX5 HI-RELIABILITY PRODUCT 2x2Mx16 5V FLASH MODULE ADVANCED* FEATURES • Data Polling and Toggle Bit feature for detection of program or erase cycle completion. ■ Access Time of 90, 120, 150ns ■ Packaging: • 56 Lead, Hermetic Ceramic, 0.520" CSOP Package 213 .

BAT54

Abstract: bq24745 bq24745RHDR bq24745RHDT FDS6680A Si4435 SI4835BDY
Contextual Info: bq24745 www.ti.com SLUS761 – DECEMBER 2007 SMBus-Controlled Level 2 Multi-Chemistry Battery Charger With Input Current Detect Comparator UGAT PHAS DCIN 27 26 25 24 23 22 ICREF 1 21 VDDP ACIN 2 20 LGATE VREF 3 19 PGND EAO 4 18 CSOP EAI 5 17 CSON FBO 6 16