BUK9E06-55A |
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NXP Semiconductors
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N-channel TrenchMOS logic level FET |
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BUK9E06-55A |
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Philips Semiconductors
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TrenchMOS logic level FET |
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BUK9E06-55A,127 |
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NXP Semiconductors
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TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 50 nC; RDS(on): 5.8@10V6.3@5V6.7@4.5V mOhm; Thermal Resistance: 0.5 K/W; VDSmax: 55 V; Package: SOT226 (I2PAK); Container: Horizontal, Rail Pack |
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BUK9E06-55A,127 |
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NXP Semiconductors
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BUK9E06-55A - N-channel TrenchMOS logic level FET, SOT226 Package, Standard Marking, Horizontal, Rail Pack |
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BUK9E06-55B |
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NXP Semiconductors
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N-channel TrenchMOS FET |
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Original |
PDF
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BUK9E06-55B |
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Philips Semiconductors
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TrenchMOS logic level FET |
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Original |
PDF
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BUK9E06-55B |
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Philips Semiconductors
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N-channel TrenchMOS logic level FET |
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Original |
PDF
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BUK9E06-55B,127 |
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NXP Semiconductors
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N-channel TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 22 nC; RDS(on): 5.4@10V6.0@5V6.4@4.5V mOhm; Thermal Resistance: 0.58 K/W; VDSmax: 55 V; Package: SOT226 (I2PAK); Container: Horizontal, Rail Pack |
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BUK9E06-55B,127 |
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NXP Semiconductors
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BUK9E06-55 - TRANSISTOR 75 A, 55 V, 0.0064 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, TO-220AB, I2PAK-3, FET General Purpose Power |
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