BUK95 Search Results

buk9520-100b

Abstract: c774
Contextual Info: BUK9520-100B N-channel TrenchMOS logic level FET Rev. 01 — 6 May 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

buk954r2

Abstract: BUK95 BUK954R2-55B
Contextual Info: BUK954R2-55B N-channel TrenchMOS logic level FET Rev. 03 — 8 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

BUK9540-100A

Abstract: BUK9640-100A
Contextual Info: BUK95/9640-100A TrenchMOS logic level FET Rev. 03 — 08 February 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability:

BUK9560-100A

Abstract: BUK9660-100A BUK956
Contextual Info: BUK9560-100A; BUK9660-100A TrenchMOS logic level FET Rev. 01 — 22 January 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.

BUK9520-100A

Abstract: BUK9620-100A
Contextual Info: BUK9520-100A; BUK9620-100A TrenchMOS logic level FET Rev. 01 — 7 February 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.

BUK9535-100A

Abstract: BUK9635-100A
Contextual Info: BUK9535-100A; BUK9635-100A TrenchMOS logic level FET Rev. 01 — 22 January 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.

Contextual Info: BUK9523-75A; BUK9623-75A TrenchMOS logic level FET Rev. 01 — 10 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.

D 795 A

Contextual Info: BUK95/96/9E06-55B TrenchMOS logic level FET Rev. 02 — 10 October 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology, featuring very low

Contextual Info: BUK951R9-40E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high

Contextual Info: BUK953R5-60E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high

Contextual Info: BUK954R4-80E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high

BUK9506-40B

Abstract: BUK9606-40B A7550
Contextual Info: BUK95/9606-40B TrenchMOS logic level FET Rev. 01 — 14 May 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.

BUK9512-55B

Abstract: BUK9612-55B
Contextual Info: BUK95/9612-55B TrenchMOS logic level FET Rev. 01 — 28 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.

BUK9516-75B

Abstract: BUK9616-75B
Contextual Info: BUK95/9616-75B TrenchMOS logic level FET Rev. 01 — 23 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.

BUK95

Abstract: BUK952R8-30B
Contextual Info: TO -22 0A B BUK952R8-30B N-channel TrenchMOS logic level FET Rev. 3 — 8 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

BUK9520-100A

Contextual Info: TO -22 0A B BUK9520-100A N-channel TrenchMOS logic level FET Rev. 02 — 7 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

BUK9514-55A

Contextual Info: TO -22 0A B BUK9514-55A N-channel TrenchMOS logic level FET Rev. 02 — 7 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

BUK9518-55A

Contextual Info: TO -22 0A B BUK9518-55A N-channel TrenchMOS logic level FET Rev. 02 — 17 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

Contextual Info: BUK95/9610-100B TrenchMOS logic level FET Rev. 01 — 09 April 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using generation three TrenchMOS™ technology, featuring very low on-state resistance.

Contextual Info: TO -22 0A B BUK9511-55A N-channel TrenchMOS logic level FET Rev. 2 — 7 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

Contextual Info: TO -22 0A B BUK95150-55A N-channel TrenchMOS logic level FET Rev. 02 — 21 April 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

Contextual Info: TO -22 0A B BUK9518-55A N-channel TrenchMOS logic level FET Rev. 02 — 17 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

Contextual Info: TO -22 0A B BUK9535-100A N-channel TrenchMOS logic level FET Rev. 2 — 9 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

Contextual Info: TO -22 0A B BUK9507-30B N-channel TrenchMOS logic level FET Rev. 02 — 31 January 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to