| BUK9606-55B |
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NXP Semiconductors
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BUK9606-55B - N-channel TrenchMOS(tm) logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 22 nC; RDS(on): 5.4@10V6.0@5V6.4@4.5V mOhm; Thermal Resistance: 0.58 K/W; VDSmax: 55 V |
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181.24KB |
13 |
| BUK9606-55B |
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Philips Semiconductors
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TrenchMOS Logic Level FET |
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PDF
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116.68KB |
16 |
| BUK9606-55B |
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Philips Semiconductors
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N-channel TrenchMOS logic level FET |
Original |
PDF
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107.27KB |
15 |
| BUK9606-55B118 |
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NXP Semiconductors
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NOW NEXPERIA BUK9606-55B - POWER |
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704.22KB |
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| BUK9606-55B,118 |
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NXP Semiconductors
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BUK9606-55 - TRANSISTOR 75 A, 55 V, 0.0064 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power |
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PDF
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181.24KB |
13 |
| BUK9606-55B,118 |
|
NXP Semiconductors
|
N-channel TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 22 nC; RDS(on): 5.4@10V6.0@5V6.4@4.5V mOhm; Thermal Resistance: 0.58 K/W; VDSmax: 55 V; Package: SOT404 (D2PAK); Container: Tape reel smd |
Original |
PDF
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107.24KB |
15 |
| BUK9606-55B/T3 |
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NXP Semiconductors
|
N-channel TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 22 nC; RDS(on): 5.4@10V6.0@5V6.4@4.5V mOhm; Thermal Resistance: 0.58 K/W; VDSmax: 55 V |
Original |
PDF
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107.24KB |
15 |
