| BUK9606-40B |
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NXP Semiconductors
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BUK9606-40B - TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 17 nC; RDS(on): 5@10V6.4@5V7.1@4.5V mOhm; Thermal Resistance: 0.74 K/W; VDSmax: 40 V |
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193.94KB |
14 |
| BUK9606-40B |
|
Philips Semiconductors
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TrenchMOS logic level FET |
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PDF
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109.23KB |
15 |
| BUK9606-40B,118 |
|
NXP Semiconductors
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BUK9606-40 - TRANSISTOR 75 A, 40 V, 0.0071 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power |
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PDF
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193.93KB |
14 |
| BUK9606-40B,118 |
|
NXP Semiconductors
|
TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 17 nC; RDS(on): 5@10V6.4@5V7.1@4.5V mOhm; Thermal Resistance: 0.74 K/W; VDSmax: 40 V; Package: SOT404 (D2PAK); Container: Tape reel smd |
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PDF
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109.21KB |
15 |
| BUK9606-40B/T3 |
|
NXP Semiconductors
|
TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 17 nC; RDS(on): 5@10V6.4@5V7.1@4.5V mOhm; Thermal Resistance: 0.74 K/W; VDSmax: 40 V |
Original |
PDF
|
109.21KB |
15 |
