PHB20N06T |
|
NXP Semiconductors
|
PHB20N06T - N-channel TrenchMOS transistor - Configuration: Single N-channel ; ID DC: 20.3 A; Qgd (typ): 6 nC; RDS(on): 75@10V mOhm; VDSmax: 55 V |
|
Original |
PDF
|
PHB20N06T |
|
Philips Semiconductors
|
N-Channel TrenchMOS Transistor |
|
Original |
PDF
|
PHB20N06T,118 |
|
NXP Semiconductors
|
PHB20 - TRANSISTOR 20.3 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power |
|
Original |
PDF
|
PHB20N06T,118 |
|
NXP Semiconductors
|
N-channel TrenchMOS transistor - Configuration: Single N-channel ; ID DC: 20.3 A; Qgd (typ): 6 nC; RDS(on): 75@10V mOhm; VDSmax: 55 V; Package: SOT404 (D2PAK); Container: Tape reel smd |
|
Original |
PDF
|
PHB20N06T/T3 |
|
NXP Semiconductors
|
N-channel TrenchMOS transistor - Configuration: Single N-channel ; ID DC: 20.3 A; Qgd (typ): 6 nC; RDS(on): 75@10V mOhm; VDSmax: 55 V |
|
Original |
PDF
|