| BUK762R7-30B |
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NXP Semiconductors
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BUK762R7-30B - Trenchmos standard level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 29 nC; RDS(on): 2.7@10V mOhm; Thermal Resistance: 0.5 K/W; VDSmax: 30 V |
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179.71KB |
14 |
| BUK762R7-30B |
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Philips Semiconductors
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TrenchMOS Standard Level FET |
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137.25KB |
15 |
| BUK762R7-30B118 |
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NXP Semiconductors
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NOW NEXPERIA BUK762R7-30B 75A, 3 |
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803.81KB |
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| BUK762R7-30B,118 |
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NXP Semiconductors
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Trenchmos standard level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 29 nC; RDS(on): 2.7@10V mOhm; Thermal Resistance: 0.5 K/W; VDSmax: 30 V; Package: SOT404 (D2PAK); Container: Tape reel smd |
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113.86KB |
16 |
| BUK762R7-30B,118 |
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NXP Semiconductors
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BUK762 - TRANSISTOR 75 A, 30 V, 0.0027 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC D2PAK-3, FET General Purpose Power |
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PDF
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179.69KB |
14 |
| BUK762R7-30B/T3 |
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NXP Semiconductors
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Trenchmos standard level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 29 nC; RDS(on): 2.7@10V mOhm; Thermal Resistance: 0.5 K/W; VDSmax: 30 V |
Original |
PDF
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113.86KB |
16 |
