BUK9508 Search Results

transistor BUK9508

Abstract: BUK9508-55B BUK95
Contextual Info: BUK9508-55B N-channel TrenchMOS logic level FET Rev. 03 — 15 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

transistor D 982

Abstract: gis 110 kv
Contextual Info: Philips Semiconductors Product specification BUK9508-55 TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very

Contextual Info: BUK9508-55B N-channel TrenchMOS logic level FET Rev. 03 — 15 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

TRANSISTOR BUK9508

Abstract: BUK9508-55A BUK9608-55A transistor smd 412 BE
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

circuit diagram wireless spy camera

Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
Contextual Info: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint

PHD78NQ

Abstract: BUK9507-30B BUK7608-40B PHB27NQ10T PHP18NQ10T ph43 PHD66NQ03LT BUK9575-100A PHP45NQ10TA si2302ds
Contextual Info: Power MOSFET Selection Guide 2009 Smaller, faster, cooler Table of contents 12 V – 25 V N-channel MOSFETs ������������������������������������������������������������������������������������������������������������ 4

BUK950

Abstract: BUK9508-55 BUK9508-55A
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has

45118

Abstract: TRANSISTOR SMD MARKING CODE RG F/45118
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting Using ’trench’ technology

SMD fet MARKING 34

Abstract: transistor smd code marking nc g TRANSISTOR SMD mos fet
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET FEATURES PHP125N06LT, PHB125N06LT SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance

buk7530-55

Abstract: mosfet-n SOT166 TOPFET buk7530
Contextual Info: SELECTION GUIDE Page TOPFETs 14 PowerMOS Transistors 16 Insulated Gate Bipolar Transistors 23 Philips Semiconductors TOPFETs VDS Selection Guide @ID FUSION O) (V) (A) Id w Pd (W) TYPE NUMBER TECHNOLOGY ENVELOPE 50 0.028 25 50 125 BUK106-50L TOPFET SOT263

BUK9508-55

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has

S25 zener diode

Contextual Info: Philips Semiconductors Product specification TrenehMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

STF12A80

Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Contextual Info: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer

Transistor SMD SOT363 SC70

Abstract: BSP254A D2Pak Package IRF540 complementary MOSFET Selection Guide PHD78NQ list of n channel fet IRF640 smd PSMN009-100W BUK7516
Contextual Info: Semiconductors Power MOSFET Selection Guide 2002 / 2003 The evolution of our LVMOS strategy continues to go from strength to strength. This MOSFET selection guide summarises our portfolio releases to date. Some of our recent innovations include: LFPAK and QLPAK packages – see page 4-5 and 8-9 exciting additions to our portfolio that further extends your choice and, with ever-increasing demands for improved

BUT11APX equivalent

Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
Contextual Info: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23

BUK9508-55A

Contextual Info: AN11243 Failure signature of electrical overstress on power MOSFETs Rev. 01 — 29 October 2012 Application note Document information Info Content Keywords Power MOSFETs, Electrical Overstress EOS , Unclamped Inductive Switching (UIS) Abstract When Power MOSFETs fail, there is often extensive damage. Examination

BUK9508-55

Abstract: PHB125N06LT 4100us
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting Using ’trench’ technology

PSMN015-60PS

Abstract: BUK9507-30B Power MOSFET Selection Guide BSS123 NXP BSH103 BSS84 / BSH201 2N7002CK BSH108 BUK7535-55A PMN38EN
Contextual Info: Power MOSFET Selection Guide 2010 Smaller, faster, cooler 2 Table of contents 12 V – 25 V N-channel MOSFETs ������������������������������������������������������������������������������������������������������������ 4

TEA1620

Abstract: BUK2114 IRF540 n-channel MOSFET BATTERY CHARGER buk2914-50syts TEA1507 BUK2114-50SYTS TEA1552 PHD78NQ bu4508dx BU2527
Contextual Info: Semiconductors Power Management Selection Guide 2005 page 1 Semiconductors Welcome to Philips’ Power Management selection guide 2005. Inside you will discover just how easily you can tap into the design freedom offered by our Power Management portfolio. Our advanced power technologies and products cover virtually all aspects of

BUK2114

Abstract: BUK2114-50SYTS saa7117 SAA7136E MPSA92 168 saa7136 buk2914-50syts TDA8920BTH bu4508dx KMZ52
Contextual Info: Index Type number Page number 1N4148 34 1N4531 34 1N47xxA series 44 1PS10SB62 32 1PS10SB63 32 1PS10SB82 32 1PS181 36 1PS184 36 1PS193 34 1PS226 36 1PS59SB10 28 1PS59SB14 28 1PS59SB15 28 1PS59SB16 28 1PS59SB20 30 1PS59SB21 28 1PS66SB17 32 1PS66SB62 32 1PS66SB63

BUK9E08-55b

Abstract: BUK9508-55B BUK9608-55B
Contextual Info: BUK95/96/9E08-55B TrenchMOS logic level FET Rev. 02 — 13 October 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.