BSW67 Search Results

BU606D

Abstract: BU606 BU608D BUY18S 2N341B BSW68 2N4895 2N5154 2N5415 sis 650
Contextual Info: CRIMSON SEMICO ND UC TO R INC 2514096 CRIMSON SSlMtHt. D O Q O B B b 2 | Ti SEMICONDUCTOR 1 99D 00336 IN C D T '33 ' J EPITAXIAL PLANAR - TO-39 PNP NPN BFX34 BSS44 BSW67 BSW68 BU125 BU125S BUY47 BUY48 BUY49S BUY68 2N341B 2N3419 2N3420 2N3421 2N3439 2N3440

2N5415

Contextual Info: C R I M S O N S E M I C O N D U C T O R INC D e | SSm CHti 00Q033L Ti 2514096 CRIMSON SEMICONDUCTOR 99 D 0 0 3 3 6 INC D T'33 ' J EPITAXIAL PLANAR - TO-39 PN P NPN BFX34 BSS44 BSW67 BSW68 BU125 BU125S BUY47 BUY48 BUY49S BUY68 2N341B 2N3419 2N3420 2N3421

Contextual Info: 7421237 0 G 2 Ô 4 CÎ7 b • 'T '3 } > - 0 3 SGS-THOMSON iLdtmnfMOûS S G S- TH OM SON BSW67 BSW68 3QE D HIGH VOLTAGE SWITCH DESCRIPTIO N The BSW 67 and BSW 68 are silicon epitaxial pla­ nar NPN transistors in Jedec TO-39 metal case. They are intended for high voltage inductive load

BSW67

Contextual Info: BSW67 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 120V 0.41 (0.016) 0.53 (0.021)

BSW67A

Abstract: transistor 2a 20v 5w
Contextual Info: BSW67A MECHANICAL DATA Dimensions in mm inches SILICON NPN PLANAR TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. FEATURES 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. • VCBO = 120V • VCEO = 120V

BSW68A 1990

Abstract: bsw68a
Contextual Info: N AMER PHILIPS/DISCRETE LTE D • bbS3^31 00273^1 bSfl B A P X l BSW66A to 68A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors primarily intended for general purpose industrial and switching applications. QUICK REFERENCE DATA BSW66A BSW67A BSW68A VCBO

Contextual Info: BSW67A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 120V 0.41 (0.016)

BY206

Abstract: 77655 BSW67A BSW68A 68A diode BY206 diode BSW66A 82S2 Silicon Epitaxial Planar Transistor philips k 68a
Contextual Info: N AMER PHILIPS/DISCRETE L'ÌE D • 1^53^31 0027ÖT1 bSß B A P X BSW66A to 68A I SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors prim arily intended fo r general purpose industrial and switching applications. Q UICK REFERENCE D ATA BSW66A BSW67A BSW68A

BU606

Abstract: bu606d 2N5415
Contextual Info: EPITAXIAL PLANAR - TO-39 PNP NPN BFX34 BSS44 BSW67 BSW68 B U125 BU125S BUY47 BUY48 BUY49S BUY68 2N3418 2N3419 2N3420 2N3421 2N3439 2N3440 2N3867 2N3868 2N4150 2N4234 2N4235 2N4236 2N4237 2N4238 2N4239 2N4895 2N4896 2N4897 2N5152 2N5154 2N5336 2N5337 2N5338

data sheet BSW67A

Abstract: BSW67A BP317 BSW66A BSW68A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BSW66A; BSW67A; BSW68A NPN switching transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 05 Philips Semiconductors Product specification NPN switching transistors

Contextual Info: BSW67 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 120V 0.41 (0.016) 0.53 (0.021)

bsw68

Abstract: bsw67
Contextual Info: SGS-THOMSON EüJÛÏÏIMOigS BSW67 BSW68 HIGH VOLTAGE SWITCH DESCRIPTION The BSW 67 and BSW 68 are silicon epitaxial pla­ nar NPN transistors in Jedec TO-39 metal case. They are intended for high voltage inductive load switching applications. ABSO LU TE M AXIM UM RATINGS

BSW67

Contextual Info: BSW67 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 120V 0.41 (0.016) 0.53 (0.021)

Contextual Info: BSW67A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 120V 0.41 (0.016)

BSW68A

Abstract: BSW67A BSW66A
Contextual Info: Philips Semiconductors Product specification NPN switching transistors BSW66A; BSW67A; BSW68A FEATURES PINNING • High current max. 1 A PIN • High voltage (max. 150 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to case • General purpose switching and amplification

BSW68

Abstract: BSW67 transistor bsw 67
Contextual Info: BSW67 SILICON PLANAR NPN B S W 68 H I G H - V O L T A G E SWITCH The BSW 67 and BSW 68 are silicon planar epitaxial NF‘N transistors in Jedec TO-39 metal case. They are intended for high voltage inductive load switching application. BSW 67 A B S O L U T E M A X IM U M R A T IN G S

BSW67A

Contextual Info: BSW67A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 120V 0.41 (0.016)

bsw68a

Abstract: BSW67A MOTOROLA
Contextual Info: MOTOROLA SC XSTRS/R F 15E D | t-3b72S4 G GflbM n 3 | T -ie -if BSW67A BSW68A MAXIMUM RATINGS Symbol BSW67A BSW68A Unit VCEO 120 150 Vdc Collector-Base Voltage VCBO 120 150 Vdc Emitter-Base Voltage Vebo 6.0 Vdc Collector Current — Continuous ic 2.0 Amp Total Device Dissipation @ Ta “ 25°C

BSW67

Abstract: BSW68 LG 631 IC transistor bsw67
Contextual Info: Data Sheet cen tral BSW67 BSW68 Sem iconductor Corp. NPN SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-39 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR BSW67, BSW68 types are Silicon NPN Epitaxial Planar Transistors designed

BY206

Abstract: BSW68A k 68a BSW67A BSW66A Silicon Epitaxial Planar Transistor philips silicon planar epitaxial transistors Philips 1990 LG 68A
Contextual Info: BSW66A to 68A PHILIPS INTERNATIONAL 5bE D m 711002b DD4237Ö bS4 HIPHIN SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors primarily intended for general purpose industrial and switching applications. QUICK R EFER EN C E DATA BSW66A BSW67A BSW68A Collector-base voltage open emitter

BSW66A

Abstract: bsw67a BSW63A bsw68a
Contextual Info: Philips Semiconductors Product specification NPN switching transistors BSW66A; BSW67A; BSW68A FEATURES PINNING • High current max. 1 A PIN • High voltage (max. 150 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to case • General purpose switching and amplification

tube az2

Abstract: 2n2389 2n2906 sis BSS68 BSW41 2N2369 2N2906 to92 BFX34 BSS38 BSW41A
Contextual Info: Transistors Type No. g s 3 o Drawing reference silicon low/medium power switching transistors book 1 parts 1 and 2 VCEJO VcEO <V V) Maximum Ratings IcM lc(AV) (mA) ImA) Hfe min. max. Ptot at 25°C (°C) <mW) Tj at •c fT VcE(sat) min. max. (mA) (MHz) (V)

2N2369At

Abstract: 2N4237 High-Voltage Amplifiers 2N3546 2N3495 2N4033 MM4001 2N5679 MOTOROLA 2n5680 motorola 2N3114
Contextual Info: Metal Small-Signal Transistors The fo llo w ing sele c to r guide ta b le s also indicate th o se M o to ro la sm all-sig nal m etal can transisto rs which are q u a lifie d under C E C C 50000, and M IL-19500 high-rel requirem ents. Devices are availab le to C E C C Levels L, F

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty