200IL Search Results
200IL Price and Stock
Microchip Technology Inc PD70200ILD-TRIC POE CNTRL 1 CHANNEL 12DFN |
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PD70200ILD-TR | Digi-Reel | 8,257 | 1 |
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PD70200ILD-TR | Reel | 15 Weeks | 3,000 |
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PD70200ILD-TR | 3,651 |
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PD70200ILD-TR | Cut Tape | 6,252 | 1 |
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PD70200ILD-TR | Reel | 82 | 15 Weeks |
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PD70200ILD-TR | 3,000 |
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PD70200ILD-TR | 17 Weeks | 3,000 |
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PD70200ILD-TR | 16 Weeks | 3,000 |
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PD70200ILD-TR | 6,000 | 250 |
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PD70200ILD-TR | 3,000 |
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Silicon Laboratories Inc EFM32PG26B500F3200IL136-BPG26 3200K FLASH 512K RAM BGA136 |
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EFM32PG26B500F3200IL136-B | Tray | 486 | 1 |
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EFM32PG26B500F3200IL136-B | 480 |
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EFM32PG26B500F3200IL136-B | 1 |
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Silicon Laboratories Inc EFR32BG26B510F3200IL136-BBG26 3200K FLASH 512K RAM BGA136 |
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EFR32BG26B510F3200IL136-B | Tray | 465 | 1 |
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EFR32BG26B510F3200IL136-B | 484 |
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EFR32BG26B510F3200IL136-B | 1 |
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Microchip Technology Inc ECE1200-I-LDIC INTFACE SPECIALIZED ESPI/LPC |
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ECE1200-I-LD | Tray | 1 |
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Renesas Electronics Corporation TSI109-200ILIC INTFACE SPECIALIZED 1023FCBGA |
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TSI109-200IL | Tray | 48 |
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TSI109-200IL | 15 |
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200IL Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: GaAÄAs IRED a PHOTO-MOS FET TLP595G TELECOMMUNICATION Unit in m m DATA ACQUISITION MEASUREMENT INSTRUMENTATION The T O S H I B A T L P 5 9 5 G condists of an a l u m i n u m g alium ar s e n i d e infra red e m i tting diode o p t i c a l l y coupled to a p h o t o - M O S FET in a eight lead plastic D IP |
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TLP595G 150mA | |
TA76494
Abstract: TC9192 TA8443 QFP60 TA8444F TA8443F TA8444 pll motor control fg fv sta 515 vh va77
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TA8444F TA844F TA8444F TC9192, TA76494 TA7712. QFP-60 TC9192) TA76494) TC9192 TA8443 QFP60 TA8443F TA8444 pll motor control fg fv sta 515 vh va77 | |
ic59-64075-G4
Abstract: B6B-XH-A IC-2564 2SA1015Y hirose connector 6 pin Yamaichi ic59 Connector B6B-XH-A 223j 2SA1015 Y 2SA1015-Y
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SBX1761-01/1762-01 CXD1177Q LM1881M 2SA1015-Y. 2SA1815-Y. IC25-64075-G4 IC59-64075-G4 SXH-001T-P06M HIF3B-34PA-2 54DSA B6B-XH-A IC-2564 2SA1015Y hirose connector 6 pin Yamaichi ic59 Connector B6B-XH-A 223j 2SA1015 Y 2SA1015-Y | |
TSC 232 CPE
Abstract: cmos to rs232 level converter CMOS - RS232 Level Converter 5V and 12V RS-232, 2 Drivers, 2 Receivers saa1 TTL RS232 Level Converter
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0QQ77 TC232* RS-232 RS-232C TC232 RS-232 TSC 232 CPE cmos to rs232 level converter CMOS - RS232 Level Converter 5V and 12V RS-232, 2 Drivers, 2 Receivers saa1 TTL RS232 Level Converter | |
TLP595AContextual Info: GaAÄAs IRED a P H O T O - M O S FET TLP595A T ENT A T I V E DATA Unit in m m TELECOMMUNICATION DATA ACQUISITION MEASUREMENT INSTRUMENTATION The T O S H I B A T L P 5 9 5 A consists of an alu m i n u m gallium a r s e n i d e i n f rared emitting diode optic a l l y coupled |
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TLP595A 300mA TLP595A | |
Contextual Info: April 1990 Edition 2 .0 FUJITSU DATA S H E E T MB7112E-W/7112L-W PROGRAMMABLE SCHOTTKY 256-BIT READ ONL Y MEMORY SCHOTTKY 256-BIT DEAP PROM 32 WORDS x 8 BITS The Fujitsu MB7112-W is high speed Schottky TTL electrically field programmable read only memory organized as 32 words by 8-bits. With three-state outputs on the MB7112-W memory |
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MB7112E-W/7112L-W 256-BIT MB7112-W | |
SL9901
Abstract: SL9901AC
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SL9901 50MHz SL9901 SL9901AC, MIL-STD-883C -36dBm 30/jA SL9901AC | |
Contextual Info: élantec NISH PERFORMANCEANAUHà INTEGRATE! CIRCUITS M EL2030/EL2030C r 120 MHz Current Feedback Amplifier CO o N. M r tSS F e a tu r e s G en era l D e sc r ip tio n • —3 dB bandw idth = 120 M H z, Av = 1 • —3 dB bandw idth = 110 M H z, Ay = 2 |
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EL2030/EL2030C 200il EL20tp EL2030 | |
Contextual Info: ANALOG DEVICES □ FEATURES Ultrastable Unity Gain Bandwidth 100MHz Bandwidth Is Independent of Gain Settings 18ns Settling to 0.1% Low Power Dissipation (630mW) Complete Overdrive Protection Low Distortion (THD: - 59dBc @ 20MHz, -78dBc @ 5MHz, -lOOdBc @ 10kHz) |
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100MHz) 630mW) 59dBc 20MHz, -78dBc 10kHz) AD9610 AD9610 10ns/DIV | |
ssi 117
Abstract: SSI 501 SSI117 1200C ST506 SSI501
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ST506 ssi 117 SSI 501 SSI117 1200C SSI501 | |
450v 6 pico farad capacitor
Abstract: EL2041 EL2041C EL2041CN HA2541 MIL-I-45208A QCX0002 QCXQ002
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EL2041C HA2541 0E-18 312T557 EL2041 450v 6 pico farad capacitor EL2041C EL2041CN HA2541 MIL-I-45208A QCX0002 QCXQ002 | |
C881
Abstract: ADI-H-1000
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AD380/AD381/AD382 AD380SH/883B AD381SH/883B AD382SH/883B ADI-H-1000: H-12A H-08B 20kft 20kil C881 ADI-H-1000 | |
smd 2TY
Abstract: 2ty smd A 2039 g EL2039 EL2039CJ EL2039CN EL2040 HA2539 HA2540 CH340
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312T5S7 EL2039/EL2040 EL2039â EL2040â MIL-STD-883 HA2539 smd 2TY 2ty smd A 2039 g EL2039 EL2039CJ EL2039CN EL2040 HA2540 CH340 | |
Contextual Info: f i t ' l l Û 3 SINGLE-TURN TRIMMERS 80 Description TO-9 Transistor Case Single Turn Element Technology Specifications, Ordering Information 75 * CO MODEL 63 * 1/4” Round or Square Single Turn 3/8* Square Single Turn 1/2' Round Single Turn Wirewound Cermet |
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100ft 100ft 20Kft GGQ17bl | |
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Contextual Info: Transistors Digital transistors built-in resistors DTC113ZUA / DTC113ZKA / DTC113ZSA •Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent cir cuit). 2) The bias resistors consist of thinfilm resistors with complete isola |
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DTC113ZUA DTC113ZKA DTC113ZSA DTC113ZUA SC-70 DTC113ZU 113ZKA/DTC | |
LM1801
Abstract: circuit schematic water under the ground LM1801N SNP428 N14A SONALERT
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LM1801 LM1801 TL/H/9139-t TL/H/9139-7 circuit schematic water under the ground LM1801N SNP428 N14A SONALERT | |
ss 050a
Abstract: 200ii
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H0S-050A/H0S-060SH HOS-050A/883B HOS-060SH/883B ADI-H-1000: H-12A MIL-M-38510 HQS-050A/HOS-060SH MIL-STD-883 ss 050a 200ii | |
lm61821Contextual Info: National LM6182 ß Semiconductor LM6182 Dual 100 mA Output, 100 MHz Current Feedback Amplifier General Description The LM6182 dual current feedback amplifier offers an un paralleled combination of bandwidth, slew-rate, and output current. Each amplifier can directly drive a 2V signal into a |
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LM6182 LM6182 lm61821 | |
SX-1 20MHZ
Abstract: 5.1 amplifier circuits
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CLC446 CLC446 400MHz, 400MHz 900ps SX-1 20MHZ 5.1 amplifier circuits | |
OS 1000pvContextual Info: ANALOG DEVICES □ FEATURES Ultrahigh Speed: Current Settling to 1LSB in 35ns High Stability Buried Zener Reference on Chip Monotonicity Guaranteed Over Temperature 10.24mA Full-Scale Output Suitable for Video Applications Integral and Differential Linearity Guaranteed Over |
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12-Bit AD568 AD568 AD539 3000pF OS 1000pv | |
gCD01
Abstract: gv48 w41b
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TA8884AN TA8884AN TC90A02F TC90AQ6F IP54-P-600-1 100//F gCD01 gv48 w41b | |
Contextual Info: J V 19-4194: Rev 2. 11/96 \ J V A \ J V \ , Single/Dual/Quad 28MHz, Low-Noise, Low-Voltage, Precision Op Amps Unity-gain stability, 28MHz bandwidth, and 4.5V/|js slew rate ensure low-noise performance in a wide variety of w ideband and measurement applications. The |
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28MHz, 28MHz MAX410/MAX412/MAX414 MAX410/MAX412/MAX414 | |
Contextual Info: International S Rectifier Provisional Data Sheet No. PD-9.1417 IRFN3710 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL Product Summary 100 Volt, 0.028£2, HEXFET Part Number B V dss RDS on Id IR F N 37 10 100 V 0 .0 2 8 Q 45A Generation 5 H E X F E T s from International Rectifier |
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IRFN3710 5S452 | |
MAX7672
Abstract: 1N4148I LF400 z80 timing diagram AD7672 MX7672 MX7672BE03 MX7672BQ03 MX7672KN03 MX7672KP03
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12-Bit MX7672 12-bit, 110mW AD7672. MX7672 MAX7672 1N4148I LF400 z80 timing diagram AD7672 MX7672BE03 MX7672BQ03 MX7672KN03 MX7672KP03 |