BREAKDOWN GATE OXIDE Search Results

451 MOSFET

Abstract: ECG463 transconductance mosfet ECG2388 ECG2384 Depletion MOSFET ecg 2385 power mosfet 500 A mosfet to3 mosfet 452
Contextual Info: Power MOSFETS ECG Type Description and Application ECG2392 MOSFET, N-Ch, ▲ Enhancement Hi Speed Switch Drain to Gate to Continuous Gate to Transcon­ Source Source Drain Source Cutoff ductance Breakdown Breakdown Current Voltage Voltage Voltage gfs •d

2SK318

Contextual Info: 44^205 2SK318- 0013D35 245 • HIT4 HITACHI/ OPTOELECTRONICS blE D SILICON N-CHANNEL MOS FET H F /V H F POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. • • Gate is Protected by Zenner Diodes. No Secondary-Breakdown.

2N7000 021

Abstract: 25c021
Contextual Info: TELEDYNE COMPONENTS 3hE D fic117b02 00077^2 1 «TSC 'T Z S Z g WTELEDYNE COMPONENTS 2N7000 2N7002 N-CHANNEL ENHANCEMENT-MODE DMOS POWER FETS FEATURES ABSO LUTE MAXIMUM RATINGS _ _ . • High Gate Oxide Breakdown, ±40V min. ■ Low Output and Transfer Capacitances

Hitachi DSA002779

Abstract: 2SK410
Contextual Info: 2SK410 Silicon N-Channel MOS FET Application HF/VHF power amplifier Features • • • • • • • High breakdown voltage You can decrease handling current. Included gate protection diode No secondary–breakdown Wide area of safe operation Simple bias circuitry

2SK317

Abstract: zenner 10v 2sk317 hitachi
Contextual Info: • 2SK317 HM'ìtSQS 0013033 47S ■ H I T 4 HI TA G H I / OPTOELECTRONICS LIE lT SILICON N-CHANNEL MOS FET H F /V H F POWER AMPLIFIER ■ FEATURES • • High Breakdown Voltage. You Can Decrease Handling Current. • Gate is Protected by Zenner Diodes.

10mhz mosfet

Abstract: an7244 conventional bipolar
Contextual Info: Harris Semiconductor No. AN7244.2 Harris Power MOSFETs September 1993 Understanding Power MOSFETs Author: Tom McNulty Power MOSFETs Metal Oxide Semiconductor, Field Effect Transistors differ from bipolar transistors in operating principles, specifications, and performance. In fact, the

AN211A

Abstract: MPF102 JFET MPF102 equivalent transistor MPF102 Transistor MPF102 JFET data sheet 2N3797 2N3797 equivalent mpf102 fet mpf102 equivalent P channel 2N4221 motorola
Contextual Info: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide

hfi5n50s

Contextual Info: BVDSS = 500 V RDS on typ = 1.2 Ω HFW5N50S / HFI5N50S ID = 5.0 A 500V N-Channel MOSFET D2-PAK I2-PAK FEATURES  Originative New Design HFW5N50S  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology HFI5N50S 1.Gate 2. Drain 3. Source

2N3797

Abstract: MPF102 equivalent transistor MPF102 JFET mpf102 fet 2N3797 equivalent 2N4221 motorola MPF102 Transistor mpf102 application note P-Channel Depletion Mode FET JFET TRANSISTOR REPLACEMENT GUIDE
Contextual Info: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide

HFW640

Abstract: HFI640
Contextual Info: BVDSS = 200 V RDS on typ = 0.145Ω HFW640 / HFI640 ID = 18 A 200V N-Channel MOSFET D2-PAK I2-PAK 2 FEATURES 1 1 3  Originative New Design 2 3 HFW640  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology HFI640 1.Gate 2. Drain 3. Source

mosfet VDS 650V ID 6A TO 252

Abstract: RG 702 Diode 66 6602 HFD2N65S hfu2n65s
Contextual Info: BVDSS = 650 V RDS on typ = 5.0 Ω HFD2N65S / HFU2N65S ID = 1.6 A 650V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3  Originative New Design 3 HFD2N65S  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology HFU2N65S 1.Gate 2. Drain 3. Source

hfs8n65s

Contextual Info: BVDSS = 650 V RDS on typ = 1.16 Ω HFS8N65S ID = 7.2 A 650V N-Channel MOSFET TO-220F FEATURES  Originative New Design 1  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances

hfs2n70s

Contextual Info: BVDSS = 700 V RDS on typ = 5.0 Ω HFS2N70S ID = 1.6 A 700V N-Channel MOSFET TO-220F FEATURES  Originative New Design 1  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances

hfu6n40s

Contextual Info: BVDSS = 400 V RDS on typ = 0.83 Ω HFD6N40S / HFU6N40S ID = 4.5 A 400V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3  Originative New Design 3 HFD6N40S  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology HFU6N40S 1.Gate 2. Drain 3. Source

RG 702 Diode

Abstract: hfu2n60s HFD2N60S HFU2N60 702 D-PAK
Contextual Info: BVDSS = 600 V RDS on typ = 4.2 Ω HFD2N60S / HFU2N60S ID = 1.9 A 600V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3  Originative New Design 3 HFD2N60S  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology HFU2N60S 1.Gate 2. Drain 3. Source

lzp*60n06

Abstract: lzp60n06 30V 60A power p MOSFET lzp60 125 diode mosfet p 30v 60a
Contextual Info: LITE ON LITE-ON SEMICONDUCTOR LZP60N06 Features • • • • • Avalanche Rugged Technology Rugged Gate Oxide Technology High di/dt Capability Improved Gate Charge Wide Expanded Safe Operating Area TO-220 GDS Application D • DC-DC Converters • UPS & Monitors

Contextual Info: SSH9N80A FEATURES - 800 V ^ D S o n = 1.3 Q. Avalanche Rugged Technology • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge o ■ ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 800V

hfp12n65s

Contextual Info: BVDSS = 650 V RDS on typ = 0.67 Ω HFP12N65S ID = 12 A 650V N-Channel MOSFET TO-220 FEATURES  Originative New Design 1  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances

HFS4N50

Contextual Info: BVDSS = 500 V RDS on HFS4N50 typ = 2.0 Ω ID = 3.4 A 500V N-Channel MOSFET TO-220F FEATURES  Originative New Design 1  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances

hfs5n40

Contextual Info: BVDSS = 400 V RDS on typ = 1.27 Ω HFS5N40 ID = 3.0 A 400V N-Channel MOSFET TO-220F FEATURES  Originative New Design 1  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances

hfp50n06

Abstract: HFP50n06 equivalent hfp50n0 BVDSS 50A60V hfp50n
Contextual Info: BVDSS = 60 V RDS on = 18 mΩ HFP50N06 ID = 50 A 60V N-Channel MOSFET TO-220 FEATURES  Originative New Design 1  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances  Excellent Switching Characteristics

hfp10n60s

Contextual Info: BVDSS = 600 V RDS on typ = 0.67 Ω HFP10N60S ID = 9.5 A 600V N-Channel MOSFET TO-220 FEATURES q Originative New Design 1 q Superior Avalanche Rugged Technology q Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source q Very Low Intrinsic Capacitances

HFP8N60S

Abstract: hfp8n60 *p8n60
Contextual Info: BVDSS = 600 V RDS on typ = 0.96 Ω HFP8N60S ID = 7.5 A 600V N-Channel MOSFET TO-220 FEATURES  Originative New Design 1  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances

hfs2n65s

Abstract: HFS2
Contextual Info: BVDSS = 650 V RDS on typ = 5.0 Ω HFS2N65S ID = 1.8 A 650V N-Channel MOSFET TO-220F FEATURES  Originative New Design 1  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances