BREAKDOWN GATE OXIDE Search Results
BREAKDOWN GATE OXIDE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| AM9513ADIB |
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AM9513 - Programmable Timer, 5 Timers, MOS, CDIP40 |
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| ICL7667MJA |
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ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 |
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| CA3130AT/B |
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CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output |
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| CA3130T |
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CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output |
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| CA3140T |
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CA3140 - Operational Amplifier, 1 Func, 15000uV Offset-Max, BIMOS, MBCY8 |
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BREAKDOWN GATE OXIDE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
2SK318Contextual Info: 44^205 2SK318- 0013D35 245 • HIT4 HITACHI/ OPTOELECTRONICS blE D SILICON N-CHANNEL MOS FET H F /V H F POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. • • Gate is Protected by Zenner Diodes. No Secondary-Breakdown. |
OCR Scan |
0013d35l75mhl75mhi2sk318 | |
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Contextual Info: SSS3N90A Advanced Power MOSFET FEATURES BVDSS = 900 V n Avalanche Rugged Technology RDS on = 6.2 Ω n Rugged Gate Oxide Technology n Lower Input Capacitance ID = 2 A n Improved Gate Charge n Extended Safe Operating Area TO-220F n Lower Leakage Current : 25 A (Max.) @ VDS = 900V |
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sss3n90ao-220f | |
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Contextual Info: SFP9530 Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS on = 0.3 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = -10.5 A Improved Gate Charge o 175 C Opereting Temperature TO-220 Extended Safe Operating Area |
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sfp9530o-220-100v | |
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Contextual Info: SFR/U9110 Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS on = 1.2 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = -2.8 A Improved Gate Charge Extended Safe Operating Area I-PAK D-PAK Lower Leakage Current : 10 µA (Max.) @ VDS = -100V |
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sfr/u9110-100v | |
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Contextual Info: $GYDQFHG 3RZHU 026 7 IRL510A FEATURES BVDSS = 100 V ♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology RDS(on) = 0.44Ω ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ID = 5.6 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area |
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irl510ao-220 | |
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Contextual Info: QFET N-CHANNEL FQP6N45 FEATURES BVDSS = 450V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 16nC Typ. • Extended Safe Operating Area |
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fqp6n45o-220 | |
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Contextual Info: SSR/U3055A Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS on = 0.15 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 60V |
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ssr/u3055a | |
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Contextual Info: QFET N-CHANNEL FQP5N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 16nC Typ. • Extended Safe Operating Area |
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fqp5n60o-220 | |
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Contextual Info: QFET P-CHANNEL FQP7P20 FEATURES BVDSS = −200V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 19nC Typ. • |
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fqp7p20-200vo-220 | |
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Contextual Info: QFET N-CHANNEL FQA15N70 FEATURES BVDSS = 700V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 70nC Typ. • Extended Safe Operating Area |
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fqa15n70 | |
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Contextual Info: QFET N-CHANNEL FQB13N06L, FQI13N06L FEATURES BVDSS = 60V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 4.8nC Typ. |
Original |
fqb13n06lfqi13n06l | |
FQPF*3n60Contextual Info: QFET N-CHANNEL FQPF3N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 10nC Typ. • Extended Safe Operating Area |
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fqpf3n60o-220ffqpf*3n60 | |
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Contextual Info: QFET N-CHANNEL FQP7N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 28nC Typ. • Extended Safe Operating Area |
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fqp7n60o-220 | |
FQPF6N60Contextual Info: QFET N-CHANNEL FQPF6N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 20nC Typ. • Extended Safe Operating Area |
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fqpf6n60o-220f | |
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Contextual Info: QFET N-CHANNEL FQA20N40 FEATURES BVDSS = 400V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 60nC Typ. • Extended Safe Operating Area |
Original |
fqa20n40 | |
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Contextual Info: QFET N-CHANNEL FQB5N50, FQI5N50 FEATURES BVDSS = 500V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 13nC Typ. |
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fqb5n50fqi5n50 | |
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Contextual Info: $GYDQFHG 3RZHU 026 7 IRF654A FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.14Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 21 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V |
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irf654ao-220 | |
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Contextual Info: QFET N-CHANNEL FQP5N40 FEATURES BVDSS = 400V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 10nC Typ. • Extended Safe Operating Area |
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fqp5n40o-220 | |
SSF10N90AContextual Info: SSF10N90A Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS on = 1.2 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 6.5 A Improved Gate Charge Extended Safe Operating Area TO-3PF Lower Leakage Current : 25 µA (Max.) @ VDS = 900V |
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ssf10n90a | |
IRFS244AContextual Info: $GYDQFHG 3RZHU 026 7 IRFS244A FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.28Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 10.2 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V |
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irfs244a | |
SSF8N80AContextual Info: SSF8N80A Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS on = 1.5 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 5.5 A Improved Gate Charge Extended Safe Operating Area TO-3PF Lower Leakage Current : 25 µA (Max.) @ VDS = 800V |
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ssf8n80a | |
SSF8N90AContextual Info: SSF8N90A Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS on = 1.6 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 5.5 A Improved Gate Charge Extended Safe Operating Area TO-3PF Lower Leakage Current : 25 µA (Max.) @ VDS = 900V |
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ssf8n90a | |
IRFS610AContextual Info: IRFS610A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS on = 1.5 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V |
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irfs610ao-220f | |
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Contextual Info: QFET N-CHANNEL FQAF85N06 FEATURES BVDSS = 60V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 86nC Typ. • Extended Safe Operating Area |
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fqaf85n06 | |