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    LTTG

    Abstract: EM 257
    Contextual Info: 4 4 ^ 2 0 5 0 G13 D35 245 • H I T 4 2SK318— HI TA CHI/ OP TO ELE CTR ON ICS blE » SILICON N-CHANNEL MOS FET H F /V H F POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. • Gate is Protected by Zenner Diodes.


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    2sk318--44tb2g50d13d3llttg+1em 257 PDF