PEPI Search Results

2SD1469

Abstract: 2SD1920
Contextual Info: Is "7 > V 7, $ / I ransistors 2SD1469/2SD1920 2SD 1469 2 5 D 1 9 2 0 Power Am pEpitaxial Planar NPN Silicon Transistors • ^ f f ^ ^ l l / D i m e n s i o n s U n it: mm • ¥s& 1) ti& VCE (sat)=6m V(at 1mA/0.1mA) 2) Æ « J Œ * » a t K 7 - f T' fa -5 0

SMD ST MICROELECTRONICS

Abstract: NV SMD TRANSISTOR ST MAKE SMD TRANSISTOR electric assisted power steering system motor ST Microelectronics Bipolar Transistor AN1233 M243 M250 LDMOS
Contextual Info: AN1233 Application note LDMOS packages Introduction LDMOS technology recently implemented at ST is an important step forward, combining technological and environmental progress. In the basic LDMOS structure Figure 1 , a pepitaxial layer is grown on an p-type substrate to form a larger drain region. An important

NT30C

Contextual Info: R e s s e 18 2 PTC ; , 7/1/8 □ HM8 + / - 107. PEPI8TAN88 M U L T I F' LI EF: _ -55 5 00 i -i - 1 P 78 0 BEO •- 0 1 , 00 LL £ 8 z 50 1,18 u 75 1 , 87 K 10 0 1 , 58 □ P E P A T I N 8 F: A N 8 E : - 5 5 T 8 1 0 0 8 PTGR AE E RANCE ! - 0 5 TE 1 5 0 8 *THERMAL T IM E PGNPTALIT: 8 0 P88

a933s

Abstract: A933 2SA933S S 2SA933S R 2SC1740 2SA933 R 2SA933 2SA933S 2SC1740S if2t
Contextual Info: 2SA933/2SA933S h *7 > V * £ /Transistors 2 S A 9 3 3 2 S A 9 3 3 S P N P v 1; =i > h 7 > v ^ ^ ~ ^ v^ ^ ^ * ^ ^ General Smal! S i9 na| A m pEpitaxial Planar P N P Silicon Transistors • <tifi 9 \-fó ~ 'Ù M /D im e n s io n s U n it : mm 0 ì/u b s c / c’* * ,

Contextual Info: Systems in Silicon Contact Information: Productivity Enhancement Products Application of Innovative Technology From Start to Finish 949-348-4200 26072 Merit Circle, Suite 109 Laguna Hills, CA 92653 E-mail: URL: sales@pepinc.com www.pepinc.com AMD Embedded Products Division, FusionE86 Support

Contextual Info: R e s s e 1 4 7 0 0 GHM5 + X-5/1 PTC ; ,7/1/0 □ F O R A T I N 0 F: A N 0 0 : - 5 5 T □ 1 0 0 CTOPAGG RANCE : - 0 5 TE 150 0 PEPICTANCE C _ -55 -1 5 iì + T H E P M A L T I M O C D N C T A N T : 3 0 C E O , MAX * D I 3 3 I P A T I D N C E N C T A N T : 3 , 5 mW/ 3 M I N

pepi c

Abstract: MRF426
Contextual Info: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA MRF426 The RF Line 25 W PEPI - 3 0 M H z RF POWER TRANSISTOR N P N S IL IC O N NPN SILICO N RF POWER TRANSISTOR . . .designed for high gain driver and o u tp u t linear am plifier stages in 1.5 to 3 0 M H z H F /S S B equipm ent.

Contextual Info: R e s s e 14700 GHM5 PTC ; , 771/3 + X- 371 PEPICTANCE □ F O R A T I N 0 F: A N 0 0 : - 5 5 T □ 1 0 0 3 T0 P A GG RANCE : - 0 5 TE 150 0 C MUCTIPPIEF: _ + T H E P M A L T I M O C D N C T A N T : 3 0 C E O , MAX * D I 3 3 I P A T I D N C E N C T A N T : 3 , 5 mW/ 3 M I N

Contextual Info: Systems in Silicon Contact Information: Productivity Enhancement Products Application of Innovative Technology From Start to Finish 949-348-4200 26072 Merit Circle, Suite 109 Laguna Hills, CA 92653 E-mail: URL: sales@pepinc.com www.pepinc.com AMD Embedded Products Division, FusionE86 Support

Contextual Info: R e s s e 12700 EHM5 + X-3/1 P T C ; , 7/1/3 PEPICTANCE □ F O R A T I N 0 F: A N 0 0 : - 5 5 T □ 1 0 0 3 T0 P A GG RANCE : - 0 5 TE 150 0 C MUCTIPPIEF: + T H E P M A L T I M O C D N C T A N T : 3 0 C E O , MAX * D I 3 3 I P A T I D N C E N C T A N T : 3 , 5 mW/ 3 M I N

Contextual Info: R e s s e 1 2 7 0 0 GHM5 + X-5/1 PTC ; ,7/1/0 □ F O R A T I N 0 F: A N 0 0 : - 5 5 T □ 1 0 0 CTOPAGG RANCE : - 0 5 TE 150 0 PEPICTANCE C _ -55 -1 5 iì + T H E P M A L T I M O C D N C T A N T : 3 0 C E O , MAX * D I 3 3 I P A T I D N C E N C T A N T : 3 , 5 mW/ 3 M I N

Contextual Info: Honeyw ell HC6664 Military Products Preliminary 8K x 8 RADIATION-HARDENED ROM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 jim Process • Typical 30 ns Access Time • Total Dose Hardness through 1x10 rad Si02 • Low Operating Power

CMOS

Contextual Info: 1.0 m CMOS Process XC10 MIXED-SIGNAL FOUNDRY EXPERTS One Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The XC10 Series is X-FAB‘s One-Micron Modular Mixed Signal Technology. Main target applications

Contextual Info: MOE D • MOSSTlb 0D137Ö3 3 ■ A M I . . T - M 2 - 8 \ G ould AMI S ilic o n F ou n d ry A pproach Gould AMI is proud of the leadership position it occupies in today’s fast-paced world of process and technology. Our Silicon Foundry services and capabilities are truly world class. We pro­

RSN 315 H 42

Abstract: RSN 314 H 41 rsn 315 LADR2 RSN 310 R 36 rsn 313 HFD27 HFD23 addressing modes 8086 AY 5 4700
Contextual Info: REJ09B0429-0100 16 H8S/2164 Group Hardware Manual Renesas 16-Bit Single-Chip Microcomputer H8S Family / H8S/2400 Series H8S/2164 Rev.1.00 Revision Date: Mar. 17, 2008 R4F2164 Rev. 1.00 Mar. 17, 2008 Page ii of xl Notes regarding these materials 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate

TD 6905 S

Abstract: ci 7430 TD 6905
Contextual Info: LDVER ROW 1000PF, 2 K V ELECTRICAL SPECIFICATIONS: 1.Û TURNS RATID P L -P 4 -P 2 i C J1-J2) (P 3 - P 7 - P 6 ) i C J 3 -J 6 ) 2.0 INDUCTANCE (P 6 -P 3 ) (PE-PI) 3.0 LEAKAGE INDUCTANCE P 6 -P 3 <V1TH J 6 AND J 3 SHDRT) P2-P1 (WITH JE AND J1 SHDRT) 4.Û INTERWINDING CAPACITANCE (P 6 ,P 7 ,P 3 ) TD (J 6 ,J 3 >

Contextual Info: • ft fit * y w n Military Products 32K x 8 RADIATION-HARDENED STATIC RAM HC685 : FEATURES RADIATION OTHER • Fabricated with RICMOS IV Bulk 0.8 pm Process • Total Dose Hardness through 1x106 rad S i0 2 • Listed on SM D #5962-921 3 Available as

Contextual Info: Technical information Back-thinned TDI-CCD Back-thinned TDI time delay integration -CCDs allow acquiring high S/N images even under low-light conditions during high-speed imaging and the like. TDI operation yields dramatically enhanced sensitivity by integrating the

MC 2882

Abstract: 2SC2862 MC 342 transistor 210B MC 2871
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

GM1206PKVX-A

Abstract: kd1204pkvx sunon gm1206pkvx-a KD1206PFV1 GM1204PKv2 KD1204PKV1 KD0502PFB3-8 GM1204PKbx GM1204PKVX SUNON KD1206PTV1
Contextual Info: SUNON Magnetic Levitation System MS Fan Blower Cap Fan Dish Fan SUNON Magnetic Plate the Magic of Magic Magnetic Plate, the Heart of SUNON MS Design Tells You the Secret Why a Motor Could Operate Defect-free Magnetic Plate, SUNON's Exclusive Innovation U.S. PAT. 6,097,120

sm 6136 b

Abstract: F2140B MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR SM 6136 60227-4 F2145B
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Sunon DP200A 2123HSL

Abstract: SF23080AT 12025 fan SF11580AT Sunon dp201a Sunon DP200A 2123xst 1123XSL 2123HBT 2123XSL SP100A
Contextual Info:

AC/ACT CMOS family characteristics

Abstract: AN6525 Difference between LS, HC, HCT devices 74 Series IC Manual plotter AN-6525 HARRIS PACKAGE LOGIC FCT scr 2 22m four-layer diode act240 harris
Contextual Info: Technical Overview Features AC/ACT Family Features The Harris AC/ACT series of Advanced High Speed CMOS Integrated Circuits is comprised of a broad range of logic types equivalent in performance and speed to FAST, AS Advanced Schottky , and S (Schottky) bipolar types, but

IDLN100D10

Abstract: ISO14000 100D10 pepi c ISO-14000 VTN100D10 zarlink PACKING 50x-2 Zarlink CROSS analog devices 0.8 -2.0um CMOS
Contextual Info: 2.0 µm 5V/40V Analog CMOS Process Parameters Technology outline • • • • • • • • Standard 5V control logic 40V transistors Epi wafers Thick gate oxide State of the art double metal technology [Ti/TiN/Al/TiN sandwich] Single or double poly Hi-res poly option [10kΩ/ ]