2N700 Search Results

TRANSISTOR SMD MARKING zg

Abstract: 2N7002BKV transistor smd zG TRANSISTOR SMD MARKING CODE zg
Contextual Info: 2N7002BKV 60 V, 340 mA dual N-channel Trench MOSFET Rev. 2 — 22 September 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET

2N7002BKW

Abstract: 2n7002bk TRANSISTOR SMD MARKING CODE 50 006-AA
Contextual Info: 2N7002BKW 60 V, 310 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: 2N7002CK 60 V, 0.3 A N-channel Trench MOSFET Rev. 01 — 11 September 2009 Product data sheet 1. Product profile 1.1 General description ESD protected N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

2N7002K-7

Abstract: 2N7002KQ-7 2N7002K1
Contextual Info: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = 25°C 2Ω @ VGS = 10V 380mA 3Ω @ VGS = 5V 310mA • • • • • 60V • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green"

2N7002A-7

Contextual Info: 2N7002A N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 6Ω @ VGS = 5V 200mA • • • • • • • • N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed

2N7002KA

Contextual Info: 2N7002KA N-channel TrenchMOS FET Rev. 03 — 25 February 2008 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level compatible

2N7002F

Abstract: 2N7002F_2
Contextual Info: 2N7002F N-channel TrenchMOS FET Rev. 03 — 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible

Contextual Info: LJi S u p ertex in c . 2N 7007 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information BV0SS1 BV Order Number / Package R d S ON] ^D(ON (max) (min) TO-92 4 5 fi 150mA 2N7007 dqs 240V Features Advanced DMOS Technology Z Free from secondary breakdown

2N7007

Contextual Info: SILICONIX INC Ô2SM73S QGmGST 1 1ÛE D fX S ilic o n ix 2N7007 incorporated -T -U l-U ä N-Channel Enhancem ent-M ode M OS Transistor TO -92 PRODUCT SUMMARY V BR DSS (V) fDS(ON) (ii) >d (A) PACKAGE 240 45 0.065 TO-92 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VNDN24 (See Section 7)

VP1304N2

Abstract: TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2
Contextual Info: _ _ fflpSupertex inc. Device Page # Device Page # Device A lp h a n u m e ric Index Page # Device Page# 2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 20 24 28 28 28 TN2106K1 TN2106N3 TN2124K1 TN2501N8 TN2501ND 57 57 61 63 63 TP2504ND TP2506ND TP2510N8 TP2510ND

Contextual Info: Supertex Inc. 2N7007 N-Channel Enhancement-Mode Vertical DMOS FET Ordering information / R d S ON b v dgs (max) 240V 45£2 Order Number / Package SI B Voss TO-92 150mA 2N7007 Features Advanced DMOS Technology 7“ Free from secondary breakdown n Low power drive requirement

Contextual Info: ^ Supertex inc . 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information Order Number / Package BVusg/ ^DS O N b v dgs (max) (min) TO-92 60V 5Q 75mA 2N7000 ' d (ON) Features Advanced DMOS Technology □ These enhancement-mode (normally-off) power transistors

Contextual Info: Supertex inc. 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET BVDgs RdS ON (max) If Ordering Information 60V 5n 75mA b v dss / Order Number / Package TO-92 2N7000 Features I i Free from secondary breakdown !J Low power drive requirement r i Ease of paralleling

2N7001

Abstract: t0 SOT23-3
Contextual Info: SILICONIX lflE D INC • Ö554735 0 0 1 4 0 2 5 Siliconix 2N7001_ in c o rp o ra te d N-Channel Enhancem ent-M ode M OS Transistor . ' p S 5 _' ^ 5 ' SOT-23 PRODUCT SUMMARY V BR DSS (V) fDS(ON) (U ) <D (A) PACKAGE 240 45 0.045 SOT-23 4 ■ ”

702 transistor smd

Abstract: TRANSISTOR SMD MARKING CODE 702 702 TRANSISTOR smd SOT23 transistor 702 F smd TRANSISTOR SMD 702 N 702 N smd transistor 702 y smd TRANSISTOR 702 k TRANSISTOR smd 702 transistor smd code smd transistor marking 702
Contextual Info: Philips Semiconductors Product specification N-channel vertical D-MOS transistor FEATURES 2N7002 QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. SYMBOL PARAMETER V ds drain-source voltage Id

Contextual Info: NEW PRODUCT 2N7002W N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR POWER SEMICONDUCTOR Features • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package

2N7002G-AE2-R

Abstract: 2N7002
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N7002 Power MOSFET 0.3 Amps, 60 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N7002 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to

an3r

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N7002ZT Preliminary Power MOSFET 300m Amps, 60 Volts DUAL N-CHANNEL ENHANCEMENT MODE MOSFET „ DESCRIPTION The UTC 2N7002ZT uses advanced technology to provide excellent RDS ON , low gate charge and low gate voltages during

SOT-363

Abstract: 2N7002ZDWG-AL6-R marking 2A sot-363
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N7002ZDW Preliminary Power MOSFET 300m Amps, 60 Volts DUAL N-CHANNEL ENHANCEMENT MODE MOSFET „ DESCRIPTION The UTC 2N7002ZDW uses advanced technology to provide excellent RDS ON , low gate charge and low gate voltages during

SOT-363 PWM

Abstract: 2N7002Z
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N7002ZDW Power MOSFET 300mA, 60V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC 2N7002ZDW uses advanced technology to provide excellent RDS ON , low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in

2N7000

Abstract: 2n7000 data sheet 2n7000 equivalent mosfet motor dc 48v
Contextual Info: DC COMPONENTS CO., LTD. 2N7000 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF N-CHANNEL SMALL SIGNAL MOSFET Description Designed for low voltage and low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

2N7000

Contextual Info: 2N7000 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) 2N7000 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain

2N7002K

Abstract: RG33
Contextual Info: 2N7002K N-Channel Enhancement Mode Power MOSFET 3 DRAIN P b Lead Pb -Free 1 GATE DRAIN CURRENT 640m AMPERES DRAIN SOURCE VOLTAGE 60 VOLTAGE * * Gate Pretection Diode SOURCE 2 Description: The 2N7002K utilized advanced processing techniques to achieve the lowest possible on-resistance,

SC-89

Contextual Info: 2N7002KT N-Channel ENHANCEMENT MODE POWER MOSFET 3 P b Lead Pb -Free 1 2 FEATURES: SC-89 * Gate-Source ESD Protected: 1500 V * Fast Switching Speed * Low On-Resistance * Low Voltage Driver Drain 3 APPLICATIONS: * Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories