2N7002K1 Search Results

Contextual Info: Formosa MS SMD MOSFET 2N7002K1DW List List. 1 Package outline. 2 Features. 2

2N7002K-7

Abstract: 2N7002KQ-7 2N7002K1
Contextual Info: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = 25°C 2Ω @ VGS = 10V 380mA 3Ω @ VGS = 5V 310mA • • • • • 60V • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green"

Contextual Info: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA Description • Low On-Resistance  Low Input Capacitance  Fast Switching Speed

SBR20Q100CTP

Abstract: DMN55D DMC2400UV DMS2120LFWB DMN601DWK SBR20A100CT SBR30A50CT SBR10100CTB
Contextual Info: DATE: 8 August, 2012 PCN #: 2084 PCN Title: Qualification of Additional Wafer Fabrication Sources Dear Customer: This is an announcement of change s to products that are currently being

2n7002k EQUIVALENT

Contextual Info: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = 25°C 2Ω @ VGS = 10V 380mA 3Ω @ VGS = 5V 310mA • • • • • 60V • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green"

MARKING C7K

Abstract: 2N7002K-7 2n7002k EQUIVALENT
Contextual Info: 2N7002K Green N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA Description • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage

Contextual Info: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 2Ω @ VGS = 10V 380mA 3Ω @ VGS = 5V 310mA • • • • • • • Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance

MARKING C7K

Abstract: 2N7002KQ-13 2N7002K-7
Contextual Info: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = 25°C 2Ω @ VGS = 10V 380mA 3Ω @ VGS = 5V 310mA • • • • • 60V • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green"

AP3039AM

Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
Contextual Info: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)

2N7002KQ-13

Abstract: 2N7002KQ-7
Contextual Info: 2N7002K Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device Notes 1 and 2 ESD Protected Up To 2kV

Contextual Info: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA Description • Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage

702 TRANSISTOR sot-23

Abstract: alpha marking 2N7002 800mA 2N7002K1
Contextual Info: 2N7002 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N7002 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

2N7002KQ-7

Abstract: k7k sot-23 sot-23 Marking k7k 2N7002K-7 2N7002K-2 2N7002K K7K
Contextual Info: 2N7002K Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device Notes 1 and 2 ESD Protected Up To 2kV

Contextual Info: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA • Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage 