2N7002KA Search Results

2N7002KA

Contextual Info: 2N7002KA N-channel TrenchMOS FET Rev. 03 — 25 February 2008 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level compatible

2N7002KA

Contextual Info: SEMICONDUCTOR 2N7002KA TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES ・ESD Protected 2000V. E B L L ・High density cell design for low RDS ON . D ・Voltage controlled small signal switch. 2 A G ・Rugged and reliable.

Contextual Info: SEMICONDUCTOR 2N7002KA TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES 2011. 4. 4 Revision No : 1 1/3

Contextual Info: SEMICONDUCTOR 2N7002KA TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES E B L ・ESD Protected 2000V. L ・High density cell design for low RDS ON . D ・Voltage controlled small signal switch. 2 H A 3 G ・Rugged and reliable.

Contextual Info: SEMICONDUCTOR 2N7002KA TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES E B L ・ESD Protected 2000V. L ・High density cell design for low RDS ON . D ・Voltage controlled small signal switch. 2 H A 3 G ・Rugged and reliable.

Contextual Info: 2N7002KA N-channel TrenchMOS FET Rev. 01 — 21 August 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level compatible

2N7002KA

Contextual Info: 2N7002KA N-channel TrenchMOS FET Rev. 02 — 25 September 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level compatible

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

2N7002KA

Contextual Info: 2N7002K-AU 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology 0.120(3.04) 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance

BUT11ApX equivalent

Abstract: PH4030AL philips uhp lamp driver power supply circuit diagram using ic tea1530 BT136 testing power management selection guide BU4508DX equivalent 2n7002 12w nxp BSN304 equivalent bu2508af equivalent
Contextual Info: Power Management selection guide 2008 Leading the power efficient connected world Table of contents Power MOSFETs 4 Automotive MOSFETs 16 Power Bipolar Transistors 20 Complex Discretes 22 Small-signal bipolar transistors 28 SCR's Triacs and Trigger Devices

Contextual Info: 2N7002K-AU 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology 0.120(3.04) 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance

KF6N60

Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
Contextual Info: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION