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2N7002F_2 Datasheets (1)

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NXP Semiconductors

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2N7002F,215		NXP Semiconductors	N-channel TrenchMOS FET - Configuration: Single N-channel ; I_D DC: 0.475 A; R_DS(on): 2000@10V4000@4.5V mOhm; V_DSmax: 60 V; Package: SOT23 (TO-236AB); Container: Tape reel smd	Original	PDF	86.87KB	12

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NXP Semiconductors


NXP Semiconductors 2N7002F-215 IN STOCK SHIP TODAY
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Component Electronics, Inc	2N7002F-215		353			1 $0.65 10 $0.65 100 $0.49 1000 $0.43 10000 $0.43	Buy Now
NXP Semiconductors 2N7002F,215 Small Signal Field-Effect Transistor, 0.475A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	2N7002F,215		10,853			1 - 10 - 100 - 1000 - 10000 -	Get Quote

2N7002F_2 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2N7002F Abstract: 2N7002F_2 Contextual Info: 2N7002F N-channel TrenchMOS FET Rev. 03 — 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible	Original	2n7002f mbb076 2n7002f_2	PDF
2N7002F Contextual Info: 2N7002F N-channel TrenchMOS FET Rev. 02 — 9 May 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible	Original	2n7002f mbb076	PDF
2N7002F Contextual Info: 2N7002F N-channel TrenchMOS FET Rev. 03 — 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible	Original	2n7002f mbb076 771-2n7002f-t/r	PDF
Contextual Info: 2N7002F N-channel TrenchMOS FET Rev. 03 — 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible	Original	2n7002f mbb076	PDF