L75MH Search Results

2SC994

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC994 Unit in mm VHF BANO POWER AMPLIFIER APPLICATIONS. 09.Z9UAX. FEATURES : Output Power '• Po=0.95W Min. ( f=l75MHz, VCC=13.5V, Pi=40mW ) Í¿Q.45 05 .C 8 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING vCBO

2SC2101

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2101 Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : Output Power Po=6W Min. ( f=l75MHz, VCC=12.5V, Pi=0.5W ) MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO Collector-Emitter Voltage

2SC2117

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2117 Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. 0S39MAX. FEATURES : 0B5MAX Output Power : Po=2.8W Min. ( f=l75MHz, VCC=13.5V, Pi=0.15W ) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR J2ÍQ.4 5

2SC2639

Contextual Info: SILICON NPN EPITAXIAL PLANAR T Y P E -2SC2639 Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : Output Power : Po=15W Min. ( f=l75MHz, V c c =12.5V, Pi=1.3W) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ Vcc=12.5V, Pi=1.3W, f=175MHz

2SC2178

Abstract: copper wire
Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2178 Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : Output Power : Po=15W Min. ( f=175MHz, VCC=12.5V, Pi=1.3W ) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ VCC=15V, Pl=1.3W, f=175MHz

sC4633

Abstract: 2sc1947 2sc1949 2SC1969 2sc1972 2sc1971 SC-4633 2SC1940 2SC1914A 2SC1913A
Contextual Info: - 112 - <Ta=25‘C.*EP àïc=25<C m 2SC1913A 2SC1914A 2SC1921 2SC1922 2SC1923 2SC1924 2SC1925 2SC1926 2SC1927 2SC1929 2SC1941 2SC1942 2SC1944 2SC1945 2SC1946 2SC1946A 2SC1947 2SC1949 2SC1952 2SC1953 2SC1955 2SC1959 2SC1965 2SC1965A 2SC1966 2SC1967 2SC1968A

Contextual Info: MITSUBISHI RF POWER MOS FET ATTENTION OBSERVE PRECAUTIONS FOR HANDLING Revision date:20th/Nov/02 ELETROSTATTC SENSITIVE DEVICES RD30HVF1 Silicon MOSFET Power Transistor,175MHz 30W DESCRIPTION OUTLINE DRAWING 22. 00 RD30HVF1 is a MOS FET type transistor specifically designed for

2SC827

Abstract: 2SC945L 2SC1030 2SC923 2SC1044 2sc1090 2SC915 2SC914 2SC850 2SC829
Contextual Info: - 100 - n Ta=25‘ C , *EPtéTc=25£C i± 2SC827 £ MS SW/LF A Vç r o VcEO IcCDC) Pc Pc* (V) (V) (A) (W) (W) I.CBO. (wax) lu A) Vcb (V) n . hF E (min) & w (Ta=25tC ) ^ (max; Ic / ÏE (A) VCE (V) (V) 5 0. 002 0.05 2SC828A fâT A 45 45 0.05 0.4 130 520 5

2SC2509

Abstract: 2SC2541 2SC2534 2SC2499 2SC2539 2sc2547 2SC2495 2SC2510 2SC2530 2sc2555
Contextual Info: - 126 - Ta=25QC, *EpííTc=25°C m 2SC2495-KA 2SC2495—MA 2SC2496A 2SC2497 2SC2497A 2SC2498 2SC2499 2SC2500 2SC2509 2SC2510 2SC2512 2SC2516 2SC2516A 2SC2517 2SC2518 2SC2522 2SC2523 2SC2527 2SC2528 2SC2530 2SC2532 2SC2534 2SC2535 2SC2538 2SC2539 2SC2540

2SA1138

Abstract: 2SC2673 2sc2681 2SA1020 200W vhf 2SC2676 2SC2644 2SC2637 2SC2638 2SC2640
Contextual Info: - 130 - X Ta=25Tlt *EP(àTc=25tï 32 2SC2636 2SC2637 & ft £ m m 2SC2638 2SC2639 2SC2640 2SC2641 ïRS scs 2SC2643 2SC2647 2SC2652 M3Í m VCBO VcEO ic(DC) Pc Pc* ICBO lf (V) (V) (A) m m (iiA) (V) vntäx) 30 20 0.05 300 300 0.1 15 35 17 2 15 VHF PA 35 17 3.5