2SC2639 Search Results

2SC2879

Abstract: 150PEP
Contextual Info: high-Free O utput Transistors F5 Package €3 Po W HF/CB N . 2SC2395 20PEP 2SC2099 30MHz 012.7 09.5 10-12PEP 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* 200PEP 2SC2652" *: Vcc=28V Vcc=50V F5 Package Po(W) VHF 175MHz \ 012.7 □ 9.5 6 2SC2638 15 2SC2639 32

Contextual Info: TOSHIBA 2SC2639 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 7 Ç C 7 fi 3 Q VHF BAND POWER AMPLIFIER APPLICATIONS Output Power : U nit in mm Po = 15W Min. i'*f = 1 7KMTT? ’ V• / i n = 19. KV •>P - i- = 1 3W Ì/ MAXIMUM RATINGS (Tc = 25°C)

2SC2639

Abstract: 12ID
Contextual Info: TOSHIBA 2SC2639 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2639 VHF BAND POWER AMPLIFIER APPLICATIONS • Unit in mm Output Power : Po = 15W Min. (f= 175MHz, V ee = 12.5V, Pi = 1.3W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage

Contextual Info: 2SC2639 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)17 V(BR)CBO (V)35 I(C) Max. (A)3.5 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1mØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.10 h(FE) Max. Current gain.

Contextual Info: TOSHIBA 2SC2639 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm VHF B AN D POWER AMPLIFIER APPLICATIONS. • Output Power : Po = 15W Min. • (f= 175MHz, V cc = 12.5V, Pi = 1.3W) 100% Test for Load Mismatch Stress at A ll Phase Angles with

2SC2639

Contextual Info: SILICON NPN EPITAXIAL PLANAR T Y P E -2SC2639 Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : Output Power : Po=15W Min. ( f=l75MHz, V c c =12.5V, Pi=1.3W) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ Vcc=12.5V, Pi=1.3W, f=175MHz

2SA1138

Abstract: 2SC2673 2sc2681 2SA1020 200W vhf 2SC2676 2SC2644 2SC2637 2SC2638 2SC2640
Contextual Info: - 130 - X Ta=25Tlt *EP(àTc=25tï 32 2SC2636 2SC2637 & ft £ m m 2SC2638 2SC2639 2SC2640 2SC2641 ïRS scs 2SC2643 2SC2647 2SC2652 M3Í m VCBO VcEO ic(DC) Pc Pc* ICBO lf (V) (V) (A) m m (iiA) (V) vntäx) 30 20 0.05 300 300 0.1 15 35 17 2 15 VHF PA 35 17 3.5

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

NEC 2532

Abstract: Ka 2535 2SC2240 2SC2460b 2SC2939 2SC2538 2SC1914A 2sc2238 2sc2555 2SC2407
Contextual Info: - tt B ÌL B tL B « M anuf. € = ¡ M £ T ype No. 2SC 2511 2SC 2512 2SC 2516 ^ 2SC 2517 # 2SC 2518 * * 2SC 2519 2SC 2522 2SC 2522A 2SC 2523 y 2SC 2527 y 2SC 2528 X * 2SC 2529 + 2SC 2530 ^ 2SC 2531 2SC 2532 ✓ 2SC 2534 r 2SC 2535 „ 2SC 2536 2SC 2537 2SC 2538

S1854

Abstract: s1854 a mp4002 MP3009 2SC3303 2SC520A 2SC519A MP4004 S2055 mp4001
Contextual Info: •A L P H A N U M E R IC A L IN D E X # Page Type No. Type No. 2SA473 121 2SB553 2SA656A 2SB554 2SA657A 123 2SB595 2SA658A 2SB596 2SA739 127 2SB673 2SA940 130 2SB674 2SA1012 132 2SB675 2SA1195 135 2SB676 2SA1225 136 2SB677 2SA1241 138 2SB679 2SA1242 142 2SB686

TOSHIBA RF Power Module S-AV24

Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
Contextual Info: 高周波用半導体デバイス ダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

tbf819

Abstract: mg50g2cl4 MG30T1AL1 GT60J101 2SD1678 ths102a MG60M1AL1 MG150N2CK1 YTF541 THS106A
Contextual Info: 保守品種一覧表 [9] [ 9 ] 保守品種一覧表 次の品種が保守品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 保守品種 1 形 名 代替品種 形 名 代替品種

2SB415

Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Contextual Info: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

3SK73

Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
Contextual Info: 高周波用半導体デバイス パワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

mg75n2ys40

Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
Contextual Info: 小信号ダイオード SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

BB 505 Varicap Diode

Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114
Contextual Info: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent

FET K161

Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
Contextual Info: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or

FET K161

Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
Contextual Info: 高周波用半導体デバイス トランジスタ・FET・セルパック編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

TT 2076

Abstract: 2SC3358 NEC 2SC3358 2SC1957 T 2109 2SC3098 2SC1775A 2SC923 2SC2068 2SC2371
Contextual Info: - 1 30 - m % Manuf. / 2SC 2068 € tt Type No. M 7£ = ¡$ SANYO 2SC 2076 2SC 2078 _ ;* * 2SC 2079 h n * 2SC 2080 «± ii * 2SC 2072 2SC 2073 2SC 2075 * 2SC 2085 * " fâ T 2SC 2086 _ 2SC 2087 & m 2SC 2088 * 2SC 2089 S * 2SC 2091 ' * 2SC 2092 ~ H 4 2SC 2094

2sc5088 horizontal transistors

Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509
Contextual Info: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or

2SC2783

Abstract: 2SC520A 2SC1001 2SC998 2SC2782 2SC2641 2SC1815 DATASHEET 10ID 2SC1165 2SC1815
Contextual Info: [8] 6. 低周波増幅回路 6.1 RC 結合増幅回路 2SC1815 2SC1815 8 kΩ VCC = 12 V 4 kΩ 56 kΩ 47 kΩ 5 µF 19 kΩ 200 µF 12 kΩ 50 Ω 500 µF 12 kΩ 5 µF 3 µF 3 µF 1.2 kΩ 電圧利得 48dB f = 8 Hz~2 MHz RG = 1 kΩ 負帰還 15dB RL