2SC2532 Search Results

2SC2532

Contextual Info: 2SC2532 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2532 Audio Frequency Amplifier Applications Driver Stage for LED Lamp Applications Temperature Compensation Applications Unit: mm • High hFE: hFE (1) = 5000 (min) (IC = 10 mA) hFE (2) = 10000 (min) (IC = 100 mA)

2SC2532

Contextual Info: 2SC2532 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2532 Audio Frequency Amplifier Applications Driver Stage for LED Lamp Applications Temperature Compensation Applications • Unit: mm High hFE: hFE (1) = 5000 (min) (IC = 10 mA) hFE (2) = 10000 (min) (IC = 100 mA)

2SC2532

Abstract: LED Driver IC toshiba
Contextual Info: TOSHIBA 2SC2532 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2532 Unit in mm A U D IO FREQUENCY AMPLIFIER APPLICATIONS. DRIVER STAGE FOR LED LA M P APPLICATIONS. + 0.5 TEMPERATURE COM PENSATION APPLICATIONS. • High hjrg . hjr;E (1) = 5000 (Min.) (IC = 10mA)

Contextual Info: 2SC2532 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2532 Audio Frequency Amplifier Applications Driver Stage for LED Lamp Applications Temperature Compensation Applications • Unit: mm High hFE: hFE (1) = 5000 (min) (IC = 10 mA) hFE (2) = 10000 (min) (IC = 100 mA)

2SC2532

Contextual Info: TO SH IBA 2SC2532 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2532 Unit in mm AUDIO FREQUENCY AMPLIFIER APPLICATIONS. DRIVER STAGE FOR LED LAMP APPLICATIONS. TEMPERATURE COMPENSATION APPLICATIONS. + 0.5 2 .5 -0 .3 + 0.25 • High hpE : 1*FE (1) = 5000 (Min.) (IC = 10mA)

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC2532 Features • NPN Silicon Epitaxial Transistors High hFE: hFE 1 =5000 (Min.) (IC=10mA) hFE(2)=10000 (Min.) (IC=100mA) Maximum Ratings

2SC2532

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC2532 U nit in mm A U D IO FREQUENCY AM PLIFIER APPLICATIONS. DRIVER STAGE FOR LED LA M P APPLICATIONS. + 0.5 2 .5 - 0.3 TEM PERATU RE C O M P E N SA T IO N APPLICATIONS. • High hpE + 0.25 . 1.5 - 0.15 : h fE l = 5000 (Min.) (IC = 10mA)

Contextual Info: TO SHIBA 2SC2532 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2532 Unit in mm AUDIO FREQUENCY AMPLIFIER APPLICATIONS. DRIVER STAGE FOR LED LAMP APPLICATIONS. TEMPERATURE COMPENSATION APPLICATIONS. • High hpE + 0.5 2 .5 - 0 . 3 + 0.25 .1 .5 - 0 - 1 5

2SC2532

Abstract: IC201
Contextual Info: 2SC2532 東芝電界効果トランジスタ シリコンNPNエピタキシャル形 PCT方式 2SC2532 ○ 低周波増幅用 ○ LED ドライブ用 ○ 温度補償用 • 単位: mm 直流電流増幅率が高い。: hFE (1) = 5000 (最小) (IC = 10 mA)

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC2532 Features • High hFE: hFE 1 =5000 (Min.) (IC=10mA) hFE(2)=10000 (Min.) (IC=100mA) x Case Material: Molded Plastic. UL Flammability

2SC2509

Abstract: 2SC2541 2SC2534 2SC2499 2SC2539 2sc2547 2SC2495 2SC2510 2SC2530 2sc2555
Contextual Info: - 126 - Ta=25QC, *EpííTc=25°C m 2SC2495-KA 2SC2495—MA 2SC2496A 2SC2497 2SC2497A 2SC2498 2SC2499 2SC2500 2SC2509 2SC2510 2SC2512 2SC2516 2SC2516A 2SC2517 2SC2518 2SC2522 2SC2523 2SC2527 2SC2528 2SC2530 2SC2532 2SC2534 2SC2535 2SC2538 2SC2539 2SC2540

Contextual Info: TOSHIBA 2SC2532 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS <;r i R3 1 i Unit in mm AUDIO FREQUENCY AMPLIFIER APPLICATIONS. DRIVER STAGE FOR LED LAMP APPLICATIONS. +0.5 TEMPERATURE COMPENSATION APPLICATIONS. 2 .5 -0 .3 +0.25 .1.5-0.15 • High hpE

2SC3340

Abstract: 2SA1324 2SC3339 2SC3426
Contextual Info: —3 10. SUPER MINI PACKAGE SERIES TO-236 MOD./SOT-23 MOD. C/i 1 H CD 3» rS M H n > TRANSISTOR << •c PC (V) (mA) (mW) 50 150 150 70 -700/400 6 V CE (V) >C (mA) (V) •c (mA) >B (mA) (MHz) 0.25/0.3 100 10 (80) NPN l General Purpose 2SC2712 ! High Voltage

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

transistor SMD s72

Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p
Contextual Info: ВВЕДЕНИЕ Впервые, сделана столь масштабная попытка, разобраться с маркировкой компонентов поверхностного монтажа SMD . Конечно, книга не является панацеей, но на взгляд авторов должна существенно помочь в той

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243