BPW 61 Search Results

BPW14A

Abstract: BPW14 BPW14C BPW13 FLU10 BPW13A bpw14b BPW 14 A 06 t127 BPW13C
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • fl'tëOG'îb 00QÔ370 7 IAL6<S BPW 13 • BPW 14 TÏÏEU IFM IM iK I electronic Ovahvt Yfchnotogm Silicon NPN Epitaxial Planar Phototransistors Applications: Detector In electronic control and drive circuits Features: • Hermetically sealed case

BPW 64 photo

Abstract: BPW 64 photo diode 77NB D5100 77nA BPW 56 photo bpx43-5 smd BPW 64 BPW 61 bpw 77na
Contextual Info: VISHAY Vishay Telefunken Selector Guide Detectors Photo Transistors C haracteristics Dim. Package Fig- Type Photo Sensitive Area / mm 2 lca / m A @ Ee /m W /c m 2 + /- q¡ V c e = 5 V, X = 950 nm 1 tr / (j.s @ (lc = 5 mA, X = RL /k Q 950 nm) Photo Transistors in Clear Plastic Package

bpw 104

Abstract: foto transistor k 4110 BPW 34 photo K 3505 transistor transistor 309 BPW 14 A IC 314 BP 104 FAS foto transistor
Contextual Info: SI-FOTODETEKTOREN TYPENÜBERSICHT S -F I SILICON PHOTODETECTORS OTODETEKTOREN, OPTISCHE SENSOREN 1. Foto IC für Fernsteuerung SFH 5110 SUMMARY OF TYPES (S PHOTODETECTORS, OPTICAL SENSORS) 1. Photo IC for Remote Control SFH 5410 SFH 5111 2. Fotodetektoren in SMT

BPW84

Abstract: S288P BPW75 BPW87 BPW28 BPW86 LT 5239 H BPW47B BPW41N IR bpw77
Contextual Info: TEL E FU NK EN E L E C T R O N I C 4ME T> m ÛTEOCnti 0D1117D 3 D1ALGG Photo Detectors Phototransistors in Clear Plastic Package Phototransistors with Filter M atched for G a A s IR ED s in Plastic Package Package Type • C h a ra c te ristic s Photo sensitive

Photo diode TFK S 186 P

Abstract: TFMS 4300 IR diodes TFK S 186 P TFK BPW 41 N diode TFMt 4300 tfmt 4300 ir detector IR diode TFK 186 tfms 4300 n mobile receptor tfm 5380 TFK S 186 P
Contextual Info: Infrared Emitters and Detectors Data Book 1994 TELEFUNKEN Semiconductors TELEFUNKEN Semiconductors Table of Contents General Information 1. Selector guide 11 1.1 1.2 1.3 1.4 1.5 Alpha-numeric index IR emitters Detectors Photomodules IrDA-infrared data transmission

TFK 940

Abstract: TFK BPW 75 IR diodes TFK 4 245 TFK 925 cqy 17 IR diodes TFK 4 BPW 64 TFK BPW 14 C TFK BPW 20 diode tfk
Contextual Info: CQY 3 6 /9 • CQY 37/9 Neunteilige Galliumarsenid-Lumineszenzdiodenzeilen 9 Element GaAs Infrared Emitting Diodes Arrays Anwendung: Strahlungsquelle im nahen Infrarot-Bereich für Lochstreifenleser Application: Radiation source in near infrared range for tape readers

fototransistor BPW 39

Abstract: BPW21 photodetectors Q62702P945 SFH 3410 BPX 48 fototransistor
Contextual Info: SI-FOTODETEKTOREN SILICON PHOTODETECTORS 6. Fotodetektoren für spezielle Anwendungen Package Type ϕ Radiant sensitive area deg. mm2 6. Photodetectors for Special Applications IP IR VR = 10 V Sλ rel tr,tf (VR = 5 V) µA nA % µs 6.1 Blau-empfindliche Fotodiode

TRANSISTOR SMD MARKING CODE 3401

Abstract: Q65110A6342 TRANSISTOR SMD MARKING CODE 702 fototransistor BPW 39 SFH415U sidelooker smd DIODE transistor smd 3401 SFH 4740 LPT80 BPY62
Contextual Info: Silicon Photodetectors, Optical Sensors and Infrared Emitters Si-Fotodetektoren, Optische Sensoren und IR-Lumineszenzdioden 107 Silicon Photodetectors, Optical Sensors and Infrared Emitters Si-Fotodetektoren, Optische Sensoren und IR-Lumineszenzdioden. 111

TRANSISTOR SMD MARKING CODE 3401

Abstract: DIODE B-10 TRANSISTOR SMD MARKING CODE 702 TRANSISTOR SMD MARKING CODE r28 TRANSISTOR SMD MARKING CODE NM SFH4450 GEOY6969 SFH 4232 SFH 4740 702 transistor smd code
Contextual Info: Infrared Components ge 88 - 92 107 108 Infrared Components Summary of Types Silicon Photodetectors For moreComponents Infrared detailed product Summary information of Types andSilicon technical Photodetectors datasheets, please visit http://catalog.osram-os.com

BPW40

Abstract: bpw 50 NJU7029 NJU7009V
Contextual Info: NJU7029 Low Noise, Rail-to-Rail Output Dual CMOS Operational Amplifier • GENERAL DESCRIPTION The NJU7029 is a CMOS operational amplifier that feature low noise as VNI=13V/√Hz typ. @f=1kHz, low operating voltage. FET input devices provide very low input bias current and

diode 9306

Abstract: FA 4301 SFH 9500 SFH 5110 bpx 48 BP104 SFH 4552 SFH9240 GEOY6972 GPXY6992
Contextual Info: SI-FOTODETEKTOREN, OPTISCHE SENSOREN UND IR-LUMINESZENZDIODEN SILICON PHOTODETECTORS, OPTICAL SENSORS AND INFRARED EMITTERS Maßbilder in mm inch Outline Drawings dimensions in mm (inch) 0.6 (0.024) 0.4 (0.016) SFH 5110, SFH 5111 Figure 2 6.1 (0.240) 5.9 (0.232)

Photo diode TFK S 186 P

Abstract: IR diodes TFK S 186 P TFK S153P TFK BPW 41 N IR diode TFK 186 TFK BPW 20 TFK S 186 P monocrystalline solar cell power crest audio pro 8200 GERMANIUM phototransistor
Contextual Info: Infrared Emitters and Detectors Data Book 1997 Contents General Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Alphanumeric Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Contextual Info: NJU7029 Low Noise, Rail-to-Rail Output Dual CMOS Operational Amplifier GENERAL DESCRIPTION The NJU7029 is a dual CMOS operational amplifier with a low noise of VNI=13nV/ Hz typ. @f=1kHz , Rail-to-Rail output and low operating voltage. It offers a single supply voltage operation

bpx28

Abstract: Germanium diode OA 182 TAA920 fy sot 143 BSV57B AC187K BPW14 BF194 AD 161 BPX34
Contextual Info: Halbleiter TELE FUN KEN Übersicht Sem iconductor survey 1972/1973 B2/V.3.20/0872 D ie s e Liste soll die W ahl g ee ig n e te r H albleiter-Typen fü r die verschiedenen A n w en du ng szw ecke e rleich te rn . Z ur besseren Ü b e rs ic h t sind nur die w e se ntlich en D aten

400Hz-80kHz

Abstract: bpw 50 NJU7029
Contextual Info: NJU7029 2 回路入り 回路入りローノイズ CMOS 出力フルスイングオペアンプ 出力フルスイングオペアンプ • 概要 NJU7029 は低電圧で動作するローノイズ CMOS オペ アンプです。VNI=13nV/√Hz typ. @f=1kHz という優れた

TDA 3619

Abstract: TDA 9340 Data sheet TDA 3619 tda 2888 0428 ci an 7591 102-060 AN 7591 POWER AMPLIFIER inverter SK 40037 TDA 810 amplifier tda 8841
Contextual Info: Revision History - 1’st Edition: October 2000 - 2’nd Edition: April 2003 • Chapter 1: Introduction • Chapter 2: DC Electrical Characteristics Recommended Operating Conditions • Chapter 3: Primitive Cells • Chapter 5: Complied Memories STDL131

KT853

Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B
Contextual Info: Cross Reference Competition Honeywell P/N P/N 100 H 0A0871-N55 50B2-4204 CALL PHOTODIODES, T 0 1 8 T A LL PIN 101 HOA1872-12 BC TR AN S A S S Y . PTX 5082-4205 CALL PHOTODIODES. P P PIN 10501 H 0A 1872-1 BC TRAN S A S S Y , PTX 5082-4207 CALL PHOTODIODES. T 0 1 8 T A LL PIN

infra-red burglar alarm circuit diagram

Abstract: seed key HCS360 200B HCS300 automatic door infrared BPW 40 pin connection in circuit
Contextual Info: HCS360 Code Hopping Encoder Product Brief* FEATURES PACKAGE TYPES PDIP, SOIC • • • • • • • • Programmable 28/32-bit serial number Programmable 64-bit encryption key Each transmission is unique 67-bit transmission code length 32-bit hopping code

PGM-3

Contextual Info: MOSAIC S E M I C O N D U C T O R INC oooibQfi m i mnoc S3E D T—46—13-29 PUMA 2U4000 PUMA 2U4000-17/20/25 molate Mosaic Semiconductor Issue 2.0 : Ju ly 1989 PRELIMINARY 4,194,304 bit CMOS High Speed UV EPROM Pin Definition Features User Configurable as 8,16 or 32 bit wide.

IC UM 66

Abstract: SM 3119 N
Contextual Info: ^ v T c in c Value the Customer V M 7 5 7 2 0 /2 2 SINGLE CHIP DATA RECOVERY CHANNEL PRELIMINARY FEATURES • Operation Up To 72 M bits/sec NRZ • Supports 1,7 RLL Code • Supports Zoned-D ensity Recording • Operation from a Single 5-Volt Supply • Data Separator has Zero-Phase Restart and M arginization

Contextual Info: HB56HW164EJN-6B/7B 1,048,576-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-573 Z Preliminary - Rev.0.0 Apr. 18,1996 Description The HB56HW164EJN belongs to the 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications.

LDR 03

Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Contextual Info: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren

XQV300

Abstract: F6Ck AH24A
Contextual Info: £ XILINX QPRO Virtex™ 2.5 ¥ QML Higli-Reliability FPGAs DS002 v. 1.0 October 4, 1999 Preliminary Product Specification Features • • • • • • • • • Certified to MIL-PRF-38535 (Qualified Manufacturer Listing) Guaranteed over the full military temperature range

Contextual Info: XRD4417 C V y i Q L in e a r C C D S ig n a l P r o c e s s o r w ith 1 0 - B it A D C a n d S e r i a l I n t e r f a c e .the analog plus company July 1997-1 FEATURES APPLICATIONS • 1.54 MSPS Pixel-to-Pixel Sample Rate Color and Gray Scale Flat-Bed Scanners