2108A Search Results

2108a

Abstract: 2108 A 2308A 2108a supply LH2208 LH2108 LH2108D LH2208A LH2208D LH2308
Contextual Info: LH2108/2208/2308 2108A/2208A/2308A D u al O p e ra tio n a l A m p lifiers D escription: The 2108, 2208, 2308, 2108A, 2208A, and 2 30 8 A m onolithic operational am plifiers are functio na lly, e le c tric a lly and p in -fo r-p in e q u iv a le n ts to th e N ational

2108a

Abstract: 2308A LH2108
Contextual Info: LH2108/2208/2308 2108A/2208A/2308A Dual O perational Amplifiers Description: The 2108, 2208, 2308 , 2108A, 2208A, and 2308A monolithic operational amplifiers are functionally, electrically and pin-for-pin equivalents to the National LH2108, LH2208, LH2308, 2108A, LH2208A and

2108a

Abstract: 2108 A lH210B 2-108A2 2108a supply LH2208
Contextual Info: LH2108/2208/2308 2108A/2208A/2308A Dual Operational Amplifiers D escription: The 2108, 2208, 2308, 2108A, 2208A, and 2308A monolithic operational amplifiers are functionally, electrically and pin-for-pin equivalents to the National LH2108, LH2208, LH2308, LH2T08A, LH2208A and

Contextual Info: 2108AQB Dual Super Beta Operational Amplifier F A IR C H IL D A Schlumberger Company MIL-STD-883 July 1986 — Rev 1s Aerospace and Defense Data Sheet Linear Products Description Connection Diagram 16-Lead DIP Top View The mA 2108AQB Dual Super Beta Operational Am plifier is

TRANSISTOR 2108A

Abstract: 2108A
Contextual Info: Raytheon Electronics Semiconductor Division L M 1 08A /L H 2108A Precision O perational A m plifiers Features Low input bias current — 2 nA Low input offset current — 200 pA Low input offset voltage — 500|iV Low input offset drift — 5 |iV/°C Wide supply range — ±3V to ±20V

TR 2108A

Abstract: 2108A PM108A 2108a supply pm308ap PM2108
Contextual Info: PM-108A/PM-2108A LOW-INPUT-CURRENT OPERATIONAL AMPLIFIERS PM-108A / PM-308A / PM-108 / PM-208/ PM-308/ PM-2108A / PM-2108 P r e c i s i o n M o n o lith ic « » In c. FEATURES d ire ctly interchangeable w ith industry-standard types, Precision M onolithics’ advanced processing provides the

2108A

Abstract: PM108A PM308AJ 2108A PMI PM108Z pm308ap PM108 PM2108 PM108AJ PM-2108
Contextual Info: PM-108A/PM-2108A PMÏ LOW-INPUT-CURRENT OPERATIONAL AMPLIFIERS PM-108A / PM-308A / PM-108 / PM-208/ PM-308/ PM-2108A / PM-2108 Monolith its ! FEATU RES The PM-2108A contains two superbeta PM-108A op amps in a single 16-pin DIP. Compared to the single PM-108A types, this

2108a

Abstract: ic 2108a pm108z PM108AZ pmi opo 7 ic+2108a TRANSISTOR+2108A
Contextual Info: PM-108A/PM-2108A FMÏ LOW-INPUT-CURRENT OPERATIONAL AMPLIFIERS PM-108A / PM-308A / PM-108/ PM-208 / PM-308/PM-2108A / PM-2108 t M ATURES d ire c tly in te rc h a n g e a b le w ith in d u s try -s ta n d a rd type s, P re cisio n M o n o lith ic s advanced pro ce ssin g provides the

2-94B1A

Abstract: 2-108A4A
Contextual Info: TOSHIBA [3 1 Package Dimensions [3 ] Package Dimensions Unit: mm 79 + 0 .5 L-il-U I I L— l ‘X-L- r i I 2-33F1 A *5,7+ 0.! I (2-33D1 A) <4 5±0 2 14-FAST-ON-TASifllO Ci H fl il 1 H 1. (+) 7.W 2.GU 8 GX 3. U 9 .GY 4.GV 5.V 10.GZ L i.(- ) t 1 6 GW (2-78A1 A)

GT250101

Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
Contextual Info: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a

A7TA

Abstract: LH2108 LH2108A NE536 SE535 SU536 LH2201
Contextual Info: ANALOG-OPERATIONAL AMPLIFIERS ELECTRICAL CHARACTERISTICS TABLE Cont’d V s =+ 15V unless otherwise specified P A R A M E TE R D E VIC E TEST C O N D IT IO N S T E M P ER A TU R E SE535 T a = 25° C -5 5 °C < T NE536 SU 536 LH2101 A 7 a < + 1 2 5 °C T A = 2 5 °C

dc to dc chopper using igbt

Abstract: TOSHIBA IGBT DATA BOOK MG100Q1ZS40
Contextual Info: MG100Q1ZS40 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q1ZS40 High Power Switching Applications Chopper Applications Unit: mm High input impedance High speed : tf = 0.5µs Max trr = 0.5µs (Max) Low saturation voltage : VCE (sat) = 4.0V (Max) Enhancement-mode

VF-RM5

Abstract: TT 2206 et 1102 TM55EZ-H TM55EZ-M X103 TM25EZ
Contextual Info: - 294 — IM ÿ x * ' l — ju M & 1È TM 25EZ o-H r O té tti 2 00 0V • * * £ » TM 25K7, M TM 25EZ-H 480 960 V /r fi.Vf V’fiR.W 400 800 Y ViiB.M 400 S00 V ,i¿ E ftïïï® -ï- Vksm I t iav> /riHMM I t, h r-t lii ,ll Pr,s; fer 25 : T f llf - Æ ,

2D1150D-050

Abstract: 2DI100Z-120 2DI150D H-17 H-18 H-19 H-22
Contextual Info: Ovó 002 oo fi Oi 001 08 001 001 OOfil 001 001 OSS 008 OS* 0021 0001 OS* 008 OS* 00*1 0021 0021 0001 OSÉ 008 3I °" A 8 tB % 0002 00*2 0081 0002 0002 08EI 0002 08ÊI 0002 0002 0091 0091 0*21 0091 0*21 0091 0091 0001 0001 00i CAO moi OSI Ofil fi21~0*fi2I~0*S2I—OT—

NV240HC04

Abstract: NV100HC04 NV120HC04 NV150HC04 NV200HC04 NV220HC04 NV270HC04
Contextual Info: — ' < ' X if.) 335 a ? ï i i k m , — n - 346- 3l"Qd I l-Q d - L K - Ol-Qd 6-Qd s tr E lí8 - ^ > <miu CD : T r > * |a ig ^ > CO •C* - 351 - - 352 - < '■ •J~ ì3r 1*1 f ö :m m > - HT-1 HT-2 77)4.5 30.2*«' 1 189*» “ ) ■<rJ21.5MAX (0 846)

sis 968

Abstract: KXB151D-14A KXB801D-14A BV EI 305 2056 K66188 K66-1
Contextual Info: - 340 - * ± E N B r j r j r jD -14 A ENBr / jr j JB D -I4B 'J 7, 9 :• i l j ¡m]i'\fMí-tT r i\ ■~ 7 -• i 'i-No. 1-166188 • ï ' h b z I . IK i \ /)+■-> ^¡l ; Vi 1 1 DC 1 m A ^ t « V ,|L /: > J ^?iS f f t ^M -t-^ % £ ft; X * ;u * ' :v; x EN Br jr /

ta8250

Abstract: SM6DZ46 SM6DZ46A SM6GZ46 SM6GZ46A SM6JZ46
Contextual Info: — 141 — * SM 6 rD, G, J _ jZ 4 6 • W të 0 * * T T -5 ^ 13 - 1 O F I A 'J 6 A o i& V i iñ f á , f T« = 25 " C ) R * ft fô U * t L T t e îiiü 9 t t # * 7 Œ O T O ^ O t t f f lS f ê â T 'if e f S ^ 'iT 'i& o t V â k # # £ í* & ( 1500V ,

BCR10EM-10

Abstract: TA8250 BCR10AM-4 BCR10AM BCR10AM-8 BCR10AM-12 BCR10AM-10 BCR10EM-6 BCR10EM-8 BCR10EM-4
Contextual Info: 178 - — H B C R 1O AM • * » 0 # ^ o f K í/ c f t iT r W f f i R f f l O if 7 ¿ ï^ f t iïr iiJM (L ffl) W h h 3 > 0 £ 7 ) W i - ^ K f lt & iW .m .) i-fc • i E ■ * * Ä # BCR 1 0 AM -6 B C R 1 0 A M -8 BCR10AM -10 Vd s m 300 400 600 700 800

FSM30C6

Abstract: FSM30C FSM30c2 FSM30C4 H-17 H-18
Contextual Info: - 174 - a FSM30C oT0-3fiJl^-77v o77XhyfktWik 07= 7- y 3>-f y7'fëiE OÜLtS^Ä File No. E809771 •*5Ë*S ¡¿ FSM30C2 ($7—V-2.PÆ , AC1500V I'/m T„=25°C' RMS avi Igm di/dl T, Tsig 200 30(Tf=63°C) 275(50Hz, 300(/=2~10m s) 10 0.5 10 3 20[Vd— %V’drm)

HC06

Abstract: NV100HC06 NV120HC06 NV200HC06 NV240HC06 NV270HC06 NV270HC06A
Contextual Info: - 336 e >I 7* ? NVr . k . jH C 0 6 - > ' ; - X - U * ? '- -t > 9 — 9 o : U L 94V -0 • : 1 ; £ C M 1 i m 1 2 V — ST— S; / | Z ifiL fz t £ < n $ & - % r £ DC 1 ff i H 'f — f fil , £ ft £ ig [V ] a íf r lG I U t S : [V ] ÍV ^ 00.6 5± 1 5 - 1

S6111

Abstract: DRA01B DRA01C DRA01E DRA03TB DRA03TC DRA03TE SG16AA40 SG16AA60 SG25AA20
Contextual Info: iü & s t? p u r p p IrtlrtLOlßW 0 0 0 0*0 co eo m co cnj OOOOO r r o£ cw : te G> csi co eo co o LOLOLOLOLO LOLOo O o esj eo cg co eo co co o O O OOOOO o O -H OOOOO OOOOO CO Tstg LOLO1 -04 -0LO o o o o lo LOLOLOLOLO LOLOLOLOLO LOLOlo lo O O co co co co eo

KK55GB

Abstract: KK55GB-40 KK55GB-80 PK55GB PK55GB-40 PK55GB-80
Contextual Info: - H í± * « • «M U P K 5 5 G B , K K 55G B 273- I- o u £ 5 l* * S » £ ^ PK 55 G B-4 0 , P K 55 G B-8 0 , KK55GB-80 960 V rrm 400 Vdrm 400 ii m E -*!- ill] Tj = 125‘C , V d = V rrm 800 V I drm T j = 1 2 5°C, V d= V dru 800 V V tm T j = 1 25T, I t m = 165A

QCA75A60

Abstract: QBB100A60 QCA30B40 ic LM 356 251C QBB100A40 QBB150A40 QBB150A60 QCA50B40 QCA50B60
Contextual Info: - 1 9 9 a ± « a QCA-2B QCA-2C T i lâ io m Œ V CE f i * f i * (A (A ) f i * f i * (V ) t f t . fi * (A ) (A ) (V ) (A ) f i ¿Z l . (A ) -K m , r * (ju s ) I p V BE d i/d t (A ) (V ) (A /î î s ) V f (u s) V be v i7 • Ü = 2 5 'C ) (V ) QCA-3A f i

SSG150C60

Abstract: SSG150C60 equivalent sumi jo SSG100C120 SSG100C80 SAT-10 SSG100C50 SSG150C20 SSG150C30 SSG100C
Contextual Info: A\ 3 , Z 'Q OS s ri a yw sri y w , v >p *»*«.! 09 rt-^ % = ü i ‘ 3 . 9 2 1 = '! S 2 '0 KW Az A = aA '0 £ Z \ = ' ± D .S 2 oor A V ÿ 3. i.V )p;ap D. }p / *p S r i, y "I V î aoA A Ot = '1 { V 8 ' 0 = y/ k,miA z A = QA ‘0 £Z = 'I ) AI oov III V I =17