BPY11 Search Results

s272

Contextual Info: Temic BPY11 S e m i c o n d u c t o r s Silicon NPN Phototransistor Description B P V U is a v e ry h ig h se n sitiv e silic o n N P N e p ita x ial p la n a r p h o to tra n s is to r in a sta n d a rd T - 1 % p la stic p a c k ­ age. D u e to its w a te rc le a r e p o x y len s th e d e v ic e is se n sitiv e to

"PHOTOVOLTAIC CELL"

Contextual Info: SIEMENS BPY11P Silicon Photovoltaic Cell Dimensions in inches mm Active area .092 (2.35) .084(2.15) f .083(2.1 1 T 024 (0.6) 1.258 (32) 1.179(30) .118 (3.0)_ .059(1.5) .079 (2)' .00^8 ( 0 .2 ) Stands Soldered t t / t .191 (4.85) 183 (4.657 .026 (0.65) .020 (0.5)

Contextual Info: SIEMENS BPY11 P Silizium-Fotoelement Silicon Photovoltaic Cell and and Approx. back so ld e r pads lacq uered side weight 0 .1 fSO06032 D iode g Maße in mm, w enn nicht anders angegeben/D im ensions in mm, unless otherw ise specified. W esentliche M erkmale

Contextual Info: SIEMENS Silizium-Fotoelement Silicon Photovoltaic Cell BPY11P Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features • S p e zie ll geeignet für Anw endungen im B ereich von 420 nm bis 1060 nm

CQY78

Abstract: CQY77 CQY78 IV CQY77A DIN5033 BPW33 germanium photodiode PIN phototransistor 600 nm solar cell transistor infrared photodiode germanium
Contextual Info: General IR and Photodetector Information Appnote 37 1. Detectors Radiation-sensitive Components Charge Carrier Generation in a Photodiode Figure 1 shows the basic design of a planar silicon photo-diode with an abrupt pn transition. Due to the differing carrier concentrations, a field region free of mobile carriers, the space charge

BPY 10

Abstract: C 82 siemens SFH nm Bpy 43 Q60215-Y65
Contextual Info: Si-Fotodetektoren Silicon Photodetectors 8. Fotodioden für spezielle Anwendungen 8. Photodiodes for Special Applications Tk = 2 5 C r A = 25 C 8.2 Zwei- und Vierfach-Fotodioden Package Radiant sensitive area ? K„ = 5 V , £ v = 1000 Ix, standard light A

CQY78

Abstract: cqy77 SF-104 equivalent transistor BPW33 solar cell transistor infrared phototransistor application lux meter photoelectric infra red sensor pair CQY78 IV Infrared phototransistor TO18 phototransistor sensitive to green light
Contextual Info: General IR and Photodetector Information Appnote 37 are separated and a photocurrent flows through an external circuit, also without an additional voltage photovoltaic effect . Carriers occurring in the space charge region are immediately sucked off due to the field prevailing in this layer. The

H0A0872-n55

Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Contextual Info: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1

lg 6154

Abstract: KTY 10-8 DL1416 KTY 20-5 DL440 O62902-B156-F222 Q62901-B64
Contextual Info: Alphanumerische Bestellnummern Q-Nummern Alphanumeric Ordering Codes (Q numbers) Achtung: NeueTypenbezeichnungen bei Si-Fotodetektoren und Lichtwellenleitern Attention: New type designations for Si-Photodetectors and Fiber-Optic Systems Bestellnummer lyp

SFH 255 FA

Abstract: LR 2703 LY3360K dl340m FP310L100-75 Q68000-A8452
Contextual Info: AlphanumerischesTypenverzeichnis Alphanumeric Type Index Achtung: NeueTypenbezeichnungen bei Si-Fotodetektoren und Lichtwellenleitern Attention: New type designations for Si-Photodetectors and Fiber-Optic Systems type Bestellnummer Seite Type Bestellnummer Seite

Contextual Info: Si-Fotodetektoren 8.2 Silicon Photodetectors Zwei- und Vierfach-Fotodioderi Package <t> Type 8.2 Radiant sensitive *ab4 /95 area SFH 234S ±55 2m al/times 2 4 (^ 1 5 ) ±60 0 5 Q62702-P270 35 0 1( s t ) 3 5 0 . 1050 1 Q62702-P211 36 4m al/times 1X1 0.2 (=S 1)

SFH302

Abstract: SFH203 IRF 426
Contextual Info: Si-Fotodetektoren und IR-Lumineszenzdioden Silicon Photodetectors and Infrared Emitters Outline drawings in mm Maßbilder (in mm) Figure 1 S u r 'a c e no* f la t in i Ö! °! Q .8 n a x ° G 1 GND 9.0 y t ' 0.5 S. ¡ 5.9 7.8 7.5 oo m ö o ¡ f t 1 C athode

KT853

Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B
Contextual Info: Cross Reference Competition Honeywell P/N P/N 100 H 0A0871-N55 50B2-4204 CALL PHOTODIODES, T 0 1 8 T A LL PIN 101 HOA1872-12 BC TR AN S A S S Y . PTX 5082-4205 CALL PHOTODIODES. P P PIN 10501 H 0A 1872-1 BC TRAN S A S S Y , PTX 5082-4207 CALL PHOTODIODES. T 0 1 8 T A LL PIN

APY12

Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP

Contextual Info: SIEMENS Sjlizium-Fotoelement Silicon Photovoltaic Cell BPY 11 P Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 420 nm bis 1060 nm • Kathode = Chipunterseite