BPX63 Search Results

em 483

Contextual Info: SIEMENS GaAIAs-IR-Lumineszenzdiode GaAIAs Infrared Emitter 00.45 SFH 483 Chip position I Anode LD 242, BPX63, SFH 464 Cathode (SFH 483) Approx. weight 0.5 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. W esentliche Merkmale

Contextual Info: SFH483 SIEMENS FEATURES • Highly efficient GaAIAs LED • Anode electrically connected to case • High pulse power • High reliability • DIN humidity category per DIN 40040 GOG • Matches BPX63, BP103, LD242, SFH464, photodetectors • Package - TO -18,18 A3 DIN 41870

BPW21 centronic

Abstract: BPW21 photodiode BPX65 BPX65 BPX63 Centronic BPX66 T018 BPW-21
Contextual Info: CENTRONIC INC-. E-0 DIV TG DE J m S E S G DD00177 7 I P ro -E le ctro n S e rie s o f P h o to d io d e s 1995250 C E N T R O N IC IN C , E -0 90D 00177 D H \^ S 'f “ BPX63, BPX65, BPX66, BPW21 The Centronic pro-electron series of photodiodes are in quantity production.

Contextual Info: SIEMENS SFH483 GaAIAs INFRARED EMITTER FEATURES Maxim um Ratings • Highly Efficient GaAIAs LED O perating and Storage Tem perature Range T0P, Ts tg - 4 0 to + 80°C Jun ction Tem perature (T j). 100°C

8PX43

Abstract: SFH415T GKDb L81a SFH402-2 SFH910 SFH485 SFH462 sfh481-3 LD275
Contextual Info: Infrared Emitters Radiant Intensity Package Outline Part Number Package TVP» Half Angle Surga Currant Features Page A SFH420 SMTTOPLED ±60" SFH421 SMTTOPLED ± 60 ° 2.5-5 too GaAs, 950 nm. On tape and reel. 7-25 4-8 100 GaAIAs, 880 nm. On tape and reel.

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

J920

Abstract: BP103
Contextual Info: SIEMENS LD242 GaAs INFRARED EMITTER Maximum Ratings FEATURES • GaAs Infrarad Emitting Diode, Fabricated In a Liquid Phase Epitaxy Emits Radiation in Near Infrared Range Cathode Electrically Connected to Case High Efficiency High Reliability Long Lifetime

Contextual Info: LD242 SIEMENS GaAs INFRARED EMITTER Package Dimensions in Inches mm 185(4 75), 141 (3 6^ 118 (3 0) 571 (14 5) 492(12 5) * max * r 0100 (2 54) -p V — 0 169(43) . 0161(4.1) i f e \ t Anode 0.018(0 45) 106(2 7) Chip Location 216(5 5) 204 (5 2) Maximum Ratings

sfh462

Contextual Info: SFH483 SIEMENS GaAIAs INFRARED EMITTER FEATURES Maximum Ratings * Highly Efficient GaAIAs LED O p e ra tin g a n d S to ra g e T e m p e ra tu re R a n g e T0 p. T s t g - 4 0 to + 8 0 °C J u n c tio n T e m p e ra tu re ( T j) .100°C

Contextual Info: SIEMENS B P X 63 Very Low Dark Current Silicon Photodiode APPLICATION • Exposure meters, automatic exposure timers DESCRIPTION The BPX 6 3 is a silicon pla n a r p ho tod iod e , m o un ted on a T 0 1 8 base p la te a n d covered w ith tra n s p a re n t p la stic. The BPX 6 3 h as been

H0A0872-n55

Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Contextual Info: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

Contextual Info: bOE » • 023Sbü5 DGHbSTH ibi « S I E G ,i SIEMENS AKTIENGESELLSCHAF SIEMENS LD242 GaAs INFRARED EMITTER Package Dimensions in Inches mm 571 (14.51 492(12 5) ,141 (3 6) 118(3 0) “ F 0 1 6 9 (4 3) . 0 161(4.1) 0100 (2 54) f 0 018(045) -106 (2 7) Chip Location

SFH205

Abstract: Q62702P1129 f495 BP104F
Contextual Info: Si-Fotodetektoren 3.2 Silicon Photodetectors Type ‘ ab 4/95 <t> (1/r=5V , deg. mm2 /¿A ±60 2.71 x 2 71 7 5 (2 3 5 ) Ev= 0 .9 8 5 x 0 985 F ig- Q62702-P76 15 ffL=1 k ii) pA o o ±75 O rdering code (V h= 5 V, 1000 Ix, stan­ dard light A) im hermetisch dichten Metallgehäuse,

SFH 462

Abstract: SFH483-L BPX63 SFH463 tc25c25 SFH483-LE7800 SFH483-M din 40040 humidity
Contextual Info: SFH483 SIEMENS GaAIAs INFRARED EMITTER FEATURES Maximum Ratings • Highly Efficient GaAIAs LED Operating and Storage Temperature Range Top, Tstg . -4 0 to + 80°C Junction Temperature (Tj). 100°C

SFH 255 FA

Abstract: LR 2703 LY3360K dl340m FP310L100-75 Q68000-A8452
Contextual Info: AlphanumerischesTypenverzeichnis Alphanumeric Type Index Achtung: NeueTypenbezeichnungen bei Si-Fotodetektoren und Lichtwellenleitern Attention: New type designations for Si-Photodetectors and Fiber-Optic Systems type Bestellnummer Seite Type Bestellnummer Seite

UAA2001

Abstract: MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402
Contextual Info: MOTOROLA Semiconductors THE EUROPEAN MASTER SELECTION 1982 The total num ber of standard Sem iconductor products available from M otorola ex­ ceeds 15 0 0 0 device types. To most of our custom ers this total presents an overw helm ing choice. The European Master Selection lists approxim ately 4 0 0 0 preferred devices that re­

BPX63

Abstract: ld242
Contextual Info: SIEMENS LD242 GaAs INFRARED EMITTER Package Dimensions in Inches mm 186 (4 .7 5 ) 141 (3 .6 ^ .671 ( 1 4 .5 ) 4 9 2 (1 2 5 ) 118 (3 .0 ) r 0 1 6 9 (4 .3 ) 0.100 (2 .5 4 ) _ 0 .1 6 1 (4 . 1) / f r i -5 0 .0 1 8 ( 0 4 5 ) |\ Anode .2 1 6 (6 .5 ) 106 <2 .7 )

SFH400-2

Abstract: LD275-2 IR remote control SFH205 sfh910 LD274-3 LD275-3 SFH402-2 LD242-3 Gaa 725
Contextual Info: Infrared Emitters Radiant tntenarty Package Outline r r n 0 r = ~ i p t— !ï-" à i h Part Number Package Type Surge Current HaH Angle mA (t< 10|ie ) A Fealuree Paga SFH420 SMTTOPLED ±60“ 2.5-5 100 GaAs, 950 nm. On tape and reel. 7-25 SFB421 SMTTOPLED

APY12

Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP

Contextual Info: BPX 63 SIEMENS Very Low Dark Current Silicon Photodiode FEATURES • Especially suitable for applications from 350 nm to T100 nm • Low reverse current typ. 5 pA • TO-1B, base plate, transparent epoxy resin lens APPLICATION • Exposure meters, automatic exposure

Contextual Info: LD242 SIEMENS GaAs Infrared Emitter Dimensions in inches mm .141 (3.6) .571i (14.5)_ ( _ .492r o( í ? ) 0.100 (2.54) Áíiode 0 .018 (0.45) 106(2.7) GET06625 Crap Location FEATURES • GaAs infrared emitting diode, fabricated In a liquid phase epitaxy process

BP103 F

Contextual Info: SFH483 SIEMENS GaAIAs INFRARED EMITTER FEATURES Maxim um Ratings • Highly Efficient GaAIAs LED O p e ra tin g a n d S to ra g e T e m p e ra tu re R a n g e To p , Ts t q - 4 0 to + 80°C * Radiation in Near Infrared Range Ju n c tio n T e m p e ra tu re ( T j ) .100°C

L0242

Contextual Info: SIEMENS LD242 GaAs INFRARED EMITTER Maximum Ratings FEATURES * GaAs Infrared Emitting Diode, Fabricated in a Liquid Phase Epitaxy Process * Emits Radiation In Near Infrared Range * Cathode Electrically Connected to Case Operating and Storage Temperature Range T0P, Tstg . -40° to +80°C