BP103 Search Results

SFH317-2

Abstract: SFH317-4 SFH501-2 SFH317F-4 sfh309-2 BP103-5 SFH309-3 BPY62-2 SFH317 LPT 80a
Contextual Info: Phototransistors Package Outline Part Typ* H«K Photocurrant Angl« XuSSOmn C ofttdor Emftter Vce-SV » V lreE(niA) SFH320-2 SFH320-3 L fc SFH320F-2 SFH320F-3 16-32 JiA SMTTOP-LED SMTTOPLED, daylight filter ±60” BP103B-4 SFH303-2 SFH303-3 SFH303-4 SFH303F-2

Contextual Info: BP103 Silicon NPN Phototransistor Characteristics TA=25°C FEATU R ES • Especially suitable for applications from 420nm to1130nm • High linearity • TO-18, base plate, transparent epoxy resin Ians, with base connection • Spectral sensitivity selections

BP103

Abstract: U5-35 BT32 BP103 F
Contextual Info: SIEM EN S BP103 Silicon NPN Phototransistor APPLICATIONS • Computer-controlled flashes • Photointerrupters • Industrial electronics • For control and drive circuits Characteristics Ta =25°C Sym. Value Unit ^'Srnax 850 nm Spectral Sensitivity Range

LD271 IR LED

Abstract: flux meter
Contextual Info: SIEMENS BP103B SILICON NPN PHOTOTRANSISTOR Package Dim ensions in Inches mm FEATURES Maxim um R atings • Silico n NPN Epitaxial Phototransistor Operating and Storage Temperature Range (Top, Tstg) .-55° to +100°C Soldering Temperature {i2 mm from case bottom)

Contextual Info: SFH483 SIEMENS FEATURES • Highly efficient GaAIAs LED • Anode electrically connected to case • High pulse power • High reliability • DIN humidity category per DIN 40040 GOG • Matches BPX63, BP103, LD242, SFH464, photodetectors • Package - TO -18,18 A3 DIN 41870

BP104 siemens

Abstract: TP20 ld271 SFH205 jas 210
Contextual Info: SIEMENS LD271 LD271L 1 " LEADS G a A s INFRARED EMITTER * High Power * Matches Photodiodes SFH205 or BP104 or Phototransistors BP103B Characteristics TA=25°C * Lightly Diffused Gray Plastic Lens * LD271L, 1 " Leads • Long Term Stability * Medium Beam, ±25°

BP103

Abstract: BPW77NB BPX43-4 BPX43-3 BP103-3 BPX43 bpx434 ea3a
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 Q0T0TpaH3MCT0pbi b Kopnyce □ 5 MM Kofl: fl^MHa BOnHbl B TOHKe MaKC. HyBCTBMT. A.max BPX43-3 BPX43-4 BPW77NB BP103-3 880 880 850 850 hm hm hm hm Yror o63opa ±15° ±15° ±10° 55° u CEC

BP103B equivalent

Abstract: BP104 FS
Contextual Info: SIEMENS C M P N T S t OPTO 44E D WÊ 0 2 3 b 3 Sb 0005112 ô BIS I EX S IE M E N S LD 273 TWO CHIP INFRARED EMITTER " T-HI-U Package Dim ensions in Inches mm Chip Location .024 (0 6) .016(0.4) _ 035(0 8) 020(05) 354(90 323 (8 Typ -]f I (5 S 1 [ Maximum Ratings

71M6543

Abstract: IEC 62056 DB6543 24 volt output smps design IEC62056 71M653X teridian metering software user teridian application notes 71m6513 small size Ferrite core TDK L6 material maxim temp sensors analog design guide
Contextual Info: 71M6543 Demo Board USER’S MANUAL Page: 1 of 91 v5 71M6543 Polyphase Energy Meter IC DEMO BOARD REV 4.0 and 5.0 USER’S MANUAL Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent

Contextual Info: SIEMENS SFH483 GaAIAs INFRARED EMITTER FEATURES Maxim um Ratings • Highly Efficient GaAIAs LED O perating and Storage Tem perature Range T0P, Ts tg - 4 0 to + 80°C Jun ction Tem perature (T j). 100°C

SFH462-L

Abstract: sfh-462 SFH462 SFH462-K
Contextual Info: SIEMENS SFH462 GaAIAs INFRARED EMITTER Package Dimensions in Inches mm Chip Location FEATURES Maximum Ratings • Radiation: Visible Red Range Operating and Storage Temperature Range (T q p .T s tg ) - 4 0 to + 8 0 °C Junction Temperature ( T j) . 100°C

Phototransistor bp 101

Abstract: fototransistor led bf 252 SFH 207 Q62702-P1057 Q62702-P1058 Q62702-P1192 Q62702-P85-S2 Q62702-P85-S3 Q62702-P85-S4
Contextual Info: SIEMENS NPN-Silizium-Fototransistor NEU: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor NEW: Silicon NPN Phototransistor with Daylight Filter BP 103B BP 103 BF Area not flat Emitter _ 2 5 .2 _ J 2 4.2 Collector 8.2 Approx. weight 0 .2 g

BP103B

Abstract: IR LD271 LD271 LD273 SFH484 SFH485 S260-C S260C
Contextual Info: SIEMENS BP 103B SILICON NF-. ! PHOTOTRANSISTOR Package Dimensions in Inches mm .448(11.4) 432(11 0) 0 2 4 (6 ) i 0 1 6 (4 ) Surface not flat— \ t 100(2 S4) t 990(25 2) i 0 5 1 (1 3 ) I 039 ( , 0 > I 9 5 1 (2 4 2 ) .169(4 6) 1 65(4 2) 2 3 2 (5 9) 2 1 7 (5 5 )

induction cooker fault finding diagrams

Abstract: enamelled copper wire swg table AC digital voltmeter using 7107 wiring diagram IEC320 C14 Inlet Male Power Socket Fuse Switch db 3202 diac siemens mkl capacitor YY63T varta CR123A HXD BUZZER lt700 transformer
Contextual Info: 03front order p1_3 1/29/02 3:01 PM C3 Page 1 components cables & connectors actives 18 57 semiconductors optoelectronics passives contents 72 81 87 91 capacitors resistors transformers, ferrites & inductors emc, filters & suppression electromechanical 92 120

TCA 7800

Abstract: sfh462 sfh-462 SFH 462
Contextual Info: SIEM ENS SFH462 GaAIAs RED EMITTER Package Dimensions in Inches mm 141 (3.6) .1 18(3.0) 0 .0 1 8 ( 0 .45) ) T T 0 ,1 6 9 (4.3) 0.161 (4.1) / .100 U l (2.54) .571 (14.51 .492(12.5) .106 .216(5.5) .204 (5.2) (2.7) Chip Location FEATURES Maximum Ratings • Radiation: Visible Red Range

TSHA3400

Abstract: "Photo Interrupter" sharp 306 transistor Infrared emitter TELEFUNKEN infrared "Photo Interrupter" 380 transistor LTR-536AD LTE-302-M LTE5238A
Contextual Info: CROSS REFFERENCE GUIDE HOfŒYWELL LITON Infrared Emitter SHARP LITON Infrared Emitter SEP8505/8525 LET-209 GL480 LTE-306 SEP8506/8526 LTE-302-M G L360/380 LTE-4206 GL537 LTE-3270 Photo Transistor SEP8405/8425 LTR-209 GL527 LTE-3271T SEP8406/8426 LTR-301 GL538

AL970

Contextual Info: SIEMENS CMPNTS-, OPTO 44E D • SIEM EN S 023b32b 0005110 4 M S I E X LD 271/271H 1" LEADS LD 271L/271 LH INFRARED EMITTER Package Dimensions in Inches mm .024(0.6) .189(4.9) .165(42) ¿*(1.0) I a .to .0» •071 (U> ^ .047 ( U ) ^ _± .028 (0.7)' (1.0)

J920

Abstract: BP103
Contextual Info: SIEMENS LD242 GaAs INFRARED EMITTER Maximum Ratings FEATURES • GaAs Infrarad Emitting Diode, Fabricated In a Liquid Phase Epitaxy Emits Radiation in Near Infrared Range Cathode Electrically Connected to Case High Efficiency High Reliability Long Lifetime

rc-5001 relay

Abstract: AC digital voltmeter using 7107 Digital ohm meter by using IL 7107 N pin diagram of ic 4066 PWM IC 8 PIN DIP 3842 12vdc to 220vac ups schematic diagram FLUKE Clamp meter diagram 12vdc motor forward reverse control diagram 220v 300w ac regulator circuit 3842 PWM power supply application note
Contextual Info: INSTRUCTION MANUAL FOR EXH Series DC Power Supply Release 2.0 95/12/29 TM-3000-EM Electronic Measurements Inc. 405 Essex Road Neptune, New Jersey USA 07753 Tel.: (908) 922-9300 FAX: (908) 922-9334 1-800-631-4298 EXH SERIES SUPPLY ABOUT THIS MANUAL About This Manual

Contextual Info: LD242 SIEMENS GaAs INFRARED EMITTER Package Dimensions in Inches mm 185(4 75), 141 (3 6^ 118 (3 0) 571 (14 5) 492(12 5) * max * r 0100 (2 54) -p V — 0 169(43) . 0161(4.1) i f e \ t Anode 0.018(0 45) 106(2 7) Chip Location 216(5 5) 204 (5 2) Maximum Ratings

Contextual Info: SIEMENS BP 103B SILICON NF-. PHOTOTRANSISTOR Package Dimensions in Inches mm . 4 4 9 ( 11 .4 ) 232 (5 9 ) Em ttter 951 (24 2 ) 323 (8 2) FEATURES Maximum Ratings * Silicon NPN Epitaxial Phototransistor * Acceptance Angle, 50° Operating and Storage Temperature Range (Top, Tstg)

Contextual Info: SIEMENS AKTIENGESELLSCHAF 47E D • fl23SbOS G0273b3 SIEM EN S «SIEG LD273 TWO CHIP INFRARED EMITTER -r=^f-n Package Dimensions in Inches mm Chip Location 024 (0 6) 016{0 4) 5 ft - r ~ 354(9 0» 035 {0 8) 020 (0 5 ) ^ / 1JJ g g 181(461 323 (8 2 ) T ^ -— l

MBP-1035-B11

Abstract: mbp1035 BP-1030-B11 BP-2034-B11 BP103
Contextual Info: 975 Stewart Avenue • Sunnyvale, California 94086 • 408-737-8181, FAX: 408-733-7645 MESA BEAM LEAD PIN DIODES Metelics’ mesa beam lead PIN diodes provide low microwave capacitance and fast switching performance. They are ideal for use in broad­ band high speed multi-throw switches as well as

Siemens RS 1001 L

Abstract: SFH2030
Contextual Info: SIEMENS LD274 LD275 GaAs INFRARED EMITTER * GaAs Infrared Emitting Diode, Fabricated in a Liquid Phase Epitaxy Process * Emits Radiation in Near Infrared Range O p e r a tin g /S to ra g e T e m p e r a tu r e R a n g e T o p , Ts t g * High Efficiency