BFW10 Search Results

Contextual Info: BFW100 Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current2.0 @Temp (øC) (Test Condition)50’ V(RRM)(V) Rep.Pk.Rev. Voltage100 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.50 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)1.0

FET BFW10

Abstract: BC244 Fet NF510 NF510 Fet 2SK520 BFW10 FET FET bf244 FET tis34 NF510 NEC 200j
Contextual Info: JUNCTION FET Item Number Part Number 91. IDSS Manufacturer VOS Off CI. Max Max PD Max Toper Max Package Style N-Channel JFETs, (Co nt' d) 5 10 15 20 TP4224 2N4224 SMP5248 TMPF5248 TP5248 TP5248 BFW10 MMF1 MMF2 MMF3 4 MMF5 MMF6 SMP3823 TIS34 TMPF3823 TP3823

bfw10 equivalent

Abstract: BFW10 BFW10 in drain resistance transistors BFW10 BFW11 bfw11 equivalent 400M C15-015
Contextual Info: BFW10 BFW11 N-CHANNËL SILICON FETS Symmetrical n-channel silicon planar epitaxial junction field-effect transistors in TO -72 metal envelopes with the shield lead connected to the case. The transistors are designed for broad band amplifiers 0 to 300 MHz . Their very low noise at low frequencies makes these devices very suitable for differential

BFW10 JFET

Abstract: bfw11 jfet jfet bfw10 BFW10 bfw10 equivalent bfw11 EQUIVALENT OF bfw10 BFW11 circuit BFW11 MOTOROLA SYMBOL BFW10
Contextual Info: MOTOROLA 6367254 SC-CXSTRS/R MOTOROLA DËjjb3b72SM DOûSbaS F> SC CXSTRS/R D 96D 8 2 6 2 5 F BFW10 BFW11 CASE 20-03, STYLE 1 TO-72 TO-2Q6A) 3 G ate M A X IM U M RATINGS Sym bol R a tin g V a lu e Drain V U n it D ra in -S o u rc e V olta g e VDS 30 Vdc

BFW11

Abstract: BFW10 bfw10 equivalent bfw10 transistor bfw11 equivalent BFW10 in drain resistance 1Z62 BFW118 electromedical 7z08
Contextual Info: 711002b 00b7bb4 IbS • I P HI N BFW10 BFW11 N-CHANNEL SILICON FETS Symmetrical n-channel silicon planar epitaxial junction field-effect transistors in TO-72 metal envelopes with the shield lead connected to the case. The transistors are designed for broad band amplifiers 0 to

bfw11 jfet

Abstract: BFW10 bfw11 BFW10 JFET jfet bfw10
Contextual Info: This Material I ru ÜJ Dl ÜJ Copyrighted LÜ J -C □ a a ru By fcH LU D- Its □a Respective 1 TO-72 N Channel JFET Manufacturer Maximum Rating« $ DEVICE Vos V min BFW10 BFW11 VDG VGSR (A) (A) nun mm Po (W) Electrical Characteristic v « . I q v as(off) o V ds & lD

BF 331 TRANSISTORS

Abstract: bfw10 BFW11 bfw10 equivalent bfw10 transistor BFW10 in drain resistance BFW118 BFW10 n-channel sis 648 data 0G35772
Contextual Info: BFW10 BFW11 N-CHANNEL SILICON FETS S y m m e tr ic a l n -c h a n n e l s ilic o n p la n a r e p ita x ia l j u n c t io n fie ld - e ffe c t tra n s is to rs in T O - 7 2 m e ta l e n v elo p e s w it h th e s h ie ld lead c o n n e c te d to th e case. T h e tra n s is to rs are desig ned fo r b ro a d b a n d a m p lifie r s 0 t o

Contextual Info: BFW1000 Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current2.0 @Temp (øC) (Test Condition)50’ V(RRM)(V) Rep.Pk.Rev. Voltage1.0k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.50 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)1.0

BFW10 JFET

Abstract: bfw 11 bfw11 bfw10 equivalent bfw 10 JFET BFW 11 bfw 96 bfw11 jfet BFW118
Contextual Info: MOTOROLA 6367254 SC-CXSTRS/R M OT O RO L A DF|b3L.7254 F> SC CXSTRS/R 96D 8 2 6 2 5 F OOûSbaS D T - 3/-3-5" BFW10 BFW11 C A SE 20-03, STYLE 1 TO-72 TO-2Q6A) M A X IM U M R A T IN G S Sym bol R a tin g V a lue D rain -So u rc e Voltage VDS 30 Vdc Drain-Gate Voltage

BFW11

Abstract: bfw11 equivalent BFW10 in drain resistance
Contextual Info: BFW10 BFW11 N-CHANNEL SILICON FETS Symmetrical n-channel silicon planar epitaxial junction field-effect transistors in TO-72 metal envelopes with the shield lead connected to the case. The transistors are designed for broad band amplifiers 0 to 300 MHz . Their very low noise at low frequencies makes these devices very suitable for differential

BFW10 JFET

Contextual Info: BFW10 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)30 I(D) Max. (A)20m I(G) Max. (A)10m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175õ I(GSS) Max. (A).1u @V(GS) (V) (Test Condition)20 V(GS)off Min. (V) I(DSS) Max. (A)20m

BFW10

Abstract: BFW11 bfw10 equivalent BFW10 in drain resistance bfw11 equivalent
Contextual Info: BFW10 BFW11 N-CHANNEL SILICON FETS Symmetrical n-channel silicon planar epitaxial junction field-effect transistors in TO-72 metal envelopes with the shield lead connected to the case. The transistors are designed fo r broad band amplifiers 0 to 300 MHz . Their very low noise at low frequencies makes these devices very suitable fo r differential

BFW10 JFET

Abstract: jfet bfw10 BFW10 BFW11 bfw11 jfet
Contextual Info: BiT ET20DDD hbEEBEc! I I TO-72 N Channel JFET Maximum Ratings DEVICE BFW10 BFW11 V os V VD<3 Vq s r (A) (A) iron min mm 30 30 30 30 30 30 Po (W ) Electrical Characteristic v«. •'a (V) (pA) min .3 .3 30 30 v QS(off) a (V ) V os & (V ) lD (nA) max lo ss •

59VIII

Abstract: 79-IX BCY 68 BCY58X BCY 62 BFW10 59vii BHARAT elek BCY58VII BCY58VIII
Contextual Info: BH AR AT E L E K / S E m C O N D DI 47E D • 1 4 3 5 3^ 3 □ □ □□ □1 3 ?B? ■ B E L l T ~ 2 7 '0 t VCE Si V CEO D e vice No VCBO Volts V o lts mm mm V ebo V ofts min hFE Ic V CE i CM at bias min /max mA Volts mA max Ptol mW ICBO »¿A typ max S at

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

bf0262a

Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Contextual Info: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A

F245B

Abstract: BF256 2N3820 BC264 U1898E BFS21A MPF105 vergleichsliste BF320 TIS69
Contextual Info: FACHHÄNDLER INFORMATION DISKRETE PRODUKTE FETs Warum FET-Vorzugsprodukte? Weil: • 20% unserer Produkte mehr als 80% aller Anforderungen erfüllen. ■ wir unsere Produkte mittels Computer analysiert haben nach: größtem Bedarf notwendigen Parametern niedrigsten Kosten

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

E112 jfet

Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
Contextual Info: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261

TRANSISTOR DATASHEET D1555

Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Contextual Info: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440

BSV81

Abstract: j310 replacement bfw11 j310 equivalent BSD211 BSV80 BSD215 BFW10 bfw10 transistor J310
Contextual Info: Philips Semiconductors Small-signal Field-effect Transistors Replacement list REPLACED/WITHDRAWN TYPES The following type numbers were included in the previous issue of this data handbook, but are not in the current edition. TYPE NUMBER REASON FOR DELETION

siliconix fet

Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
Contextual Info: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility