GL+7837
Contextual Info: Gl BDE T> • 7*12*1237 QQBD'ib'i 1 H M vi>K¿.3 BFW 16A BFW 17A S C S - T H O M S O N lu í * ® s G S-THOMSON CATV-MATV AMPLIFIERS DESCRIPTION The BFW 16A and BFW 17A are multi-emitter sili con planar epitaxial NPN transistors in Jedec TO-39 metal case, with extremely good intermodulation
|
OCR Scan
|
bfw16abfw17at-31-23gl+7837 |
PDF
|
BFW16
Abstract: BFW17 BFW 100 transistor BFW 100 bfw 10 transistor BFW transistors BFW16A transistors BFW16A
Contextual Info: Ç7 SC S -T H O M S O N KUiSTEMllKSS BFW 16A BFW17A S G S-THOMSON C A T V -M A T V A M P L IF IE R S DESCRIPTIO N The BFW 16A and BFW 17A are multi-emitter sili con planar epitaxial NPN transistors in Jedec TO-39 metal case, with extremely good intermodulation
|
OCR Scan
|
bfw16abfw17bfw16a-bfw17abfw16+7-bfw17at-31-23bfw 100 transistorbfw 100bfw 10 transistorbfw transistorstransistors bfw16a
|
PDF
|
BFW17A
Abstract: BFW transistors BFW 100 BFW16A transistors BFW16A bfw16a-bfw17a bfw1 bfw 11
Contextual Info: BFW16A BFW17A CATV-MATV AMPLIFIERS DESCRIPTION The BFW 16A and BFW 17A are multi-emitter silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, with extremely good intermodulation properties and high power gain. They are primarily intended for final and driver stages in channel-and
|
Original
|
bfw16abfw17abfw transistorsbfw 100+4transistors bfw16abfw16a-bfw17abfw1bfw 11
|
PDF
|
BFW16A
Abstract: 16ab BFW17A
Contextual Info: SGS-THOMSON R!tlD EæilLI(g'iri iD(SS BFW16A BFW17A CATV-MATV AMPLIFIERS D E S C R IP T IO N The BFW 16Aand BFW 17Aare multi-emitter silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, with extremely good intermodulation properties and high power gain. They are primarily
|
OCR Scan
|
bfw16abfw17a16aand17aare+116ab
|
PDF
|
GERMANIUM SMALL SIGNAL TRANSISTORS
Abstract: AD142 AD143 GERMANIUM SMALL SIGNAL PNP TRANSISTORS 2N4358 AU113 BSX29 sgs-ates transistors sgs-ates germanium transistor pnp
Contextual Info: S G S -A T E S Sem iconductors Transistors - PNR/Germanium P N P High Voltage Transistors < O< 0.4 0.7 0.7 150 150 240 _ W BFW 43 BFW 44 2N4358 o CD U Code 5 > Max P t o t @ T a m b — 25 C o R E FE R E N C E T A B L E S 150 150 — (m A) Stock No. Outline
|
OCR Scan
|
bfw4319038ebfw4419039c+142n435834787bbsx2919080absx3619084dgermanium small signal transistorsad142ad143germanium small signal pnp transistorsau113sgs-ates transistorssgs-atesgermanium transistor pnp
|
PDF
|
BFW92
Abstract: TRANSISTOR BFW 11 SQP5 2N6621 349 2110 Q62702-F321 Q68000-A4669 QQG4733 6621 transistor bfw 90
Contextual Info: BSC D • Û235b05 0004731 7 « S I E G NPN Silicon RF Broadband Transistors T c rc\ t -» - SIEMENS AKTIENÛESELLSCHAF T - H 't r BFW 92 2 N 6621 BFW 9 2 is an epitaxial NPN silicon planar RF transistor in a plastic package similar to TO 119 50 B 3 DIN 41 86 7 ; intended for use as RF amplifier up to the GHz range,
|
OCR Scan
|
6535bq52n6621q62702-f321q68000-a4669+8temperatu077qqg4733bfw92transistor bfw 11sqp5349 21106621transistor bfw 90
|
PDF
|
TRANSISTOR BFW 16
Abstract: BFW92 2N6621 Q62702-F321 Q68000-A4669 QQG4733 siemens 800 169 O TRANSISTOR BFW 11 BFw 92 transistor bfw 90
Contextual Info: BSC D • Û235b05 0004731 7 « S I E G i l ' t r BFW 92 2 N 6621 NPN Silicon RF Broadband Transistors 'l c r rw -r * SIEMENS AKTIENÛESELLSCHAF B F W 9 2 is an epitaxial N PN silicon planar RF transistor in a plastic package similar to TO 119 50 B 3 D IN 41867 ; intended for use as RF amplifier up to the G H z range,
|
OCR Scan
|
6535bq52n6621q62702-f321q68000-a4669+7qqg4733bfw92transistor bfw 16siemens 800 169 otransistor bfw 11bfw 92transistor bfw 90
|
PDF
|
BFW92
Abstract: BFW92A
Contextual Info: 1 ?, BFW 92, B FW 92A W ideband N-P-N bipolar silicon R F transistors 02* t , k . 1.2 i T P in o u ts : 1 -B a se , 2- C o lle c to r, ”4 .Î Q .S T ra n s is to r is d e s ig n e d fo r a p p lic a tio n in s a te llite c o m m u n ic a tio n s y s te m s ,
|
OCR Scan
|
bfw92aot-37bfw92-25rna+2800mhz600mhz
|
PDF
|
Transistor BFR 96
Abstract: BFR 30 transistor Transistor BFR 35 BFT95 bfx19 bsx30 BFR 80 BFW17A BFR10 BFR36
Contextual Info: PROFESSIONAL TRANSISTORS continued m u > (s (5) \ œ œ •Q -a o ex. Ll_ z r i o £3. > < e X < o LU U_ .£= BFR10 N PN N PN BFR 11 NPIM B F R 36 BFR 37 N PN BFR 38 PNP BFR 90* NPN N PN BFR 91* B F R 96* N PN BFR9 7 /2N 3866 NPN B F R 98/2N 4427 NPN PNP
|
OCR Scan
|
bfr10bfr36bfr9697/2n+8transistor bfr 96bfr 30 transistortransistor bfr 35bft95bfx19bsx30bfr 80bfw17a
|
PDF
|
bss17
Abstract: BFY 99 Transistor BFR 30 BFR 30 transistor BFR 450 BFY 93 bfx 63 bfw 96 Transistor BFR 96 BFX97
Contextual Info: PROFESSIONAL TRANSISTORS continued m u > (s (5) \ œ œ •Q -a o ex. Ll_ z r i o £3. > < e X CO < E o 'i LU U_ .£= BFR10 NPN NPN BFR 11 NPIM B F R 36 BFR 37 NPN BFR 38 PNP BFR 90* NPN NPN BFR 91* B F R 96* NPN BFR9 7 /2N 3866 NPN B F R 98/2N 4427 NPN
|
OCR Scan
|
bfr10bfr36bfr9697/2n+1698/to-39bfx97a15/2n16/2n17/2n18/2nbss17bfy 99transistor bfr 30bfr 30 transistorbfr 450bfy 93bfx 63bfw 96transistor bfr 96bfx97
|
PDF
|
bfw44
Abstract: BFW43 BFW transistors BFw 94
Contextual Info: BFW43 BFW44 HIGH VOLTAGE AMPLIFIERS DESCRIPTION The BFW43 and BFW44 are silicon planar epitaxial PNP transistors in Jedec TO-18 BFW43 and Jedec TO-39 (BFW44) metal cases. Both devices are designed for use in amplifiers where high voltage and high gain are necessary. In
|
Original
|
bfw43bfw4415otherwisebfw transistors+1bfw 94
|
PDF
|
BFR 450
Abstract: BFW64 tpl 550 BFW17A BFR38 BFW63 BFX19 BFT95H BFR36 BFR96
Contextual Info: PROFESSIONAL TRANSISTORS continued ex. (5) (s \ œ •Q o œ -a Ll_ z £3. > 'i < o LU U_ .£= BFR10 NPN NPN BFR 11 NPIM B F R 36 B FR 37 NPN B FR 38 PNP BFR 90* NPN NPN B FR 91* B F R 96* NPN BF R97/2N 3866 NPN B F R 98/2N 4427 NPN PNP BFR 99 PNP BFT95
|
OCR Scan
|
bfr10bfr36bfr9697/2n+1098/bfxbfx18bfr 450bfw64tpl 550bfw17abfr38bfw63bfx19bft95h
|
PDF
|
bfw44
Abstract: BFW43 BFW transistors
Contextual Info: 3QE D • 7121237 QDBQTTB D ■ Ì Eu SGS-THOMSON ^I TO «S BFW43 BFW44 S G S-THOMSON HIGH VOLTAGE AMPLIFIERS DESCRIPTIO N T h e B F W 43 and B F W 44 a re silicon planar epitaxial P N P transistors in Jedec T O -1 8 B F W 4 3 and Jede c T O -3 9 (B F W 4 4) m etal cases.
|
OCR Scan
|
bfw43bfw44gq3q175bfw43-bfw44+2t-31-19bfw transistors
|
PDF
|
BFR 450
Abstract: BFR36 BFY 93 bft95 BFw 94 BFR10 BFR96 BFT95H BFW16A BFW17A
Contextual Info: PROFESSIONAL TRANSISTORS continued ex. (5) (s \ œ •Q o œ -a Ll_ z £3. > 'i < o LU U_ .£= BFR10 NPN NPN BFR 11 NPIM B F R 36 B FR 37 NPN B FR 38 PNP BFR 90* NPN NPN B FR 91* B F R 96* NPN BF R97/2N 3866 NPN B F R 98/2N 4427 NPN PNP BFR 99 PNP BFT95
|
OCR Scan
|
bfr10bfr36bfr9697/2n+13bfr16bfx31bfx37bfw43bfw44bfx90bfr 450bfy 93bft95bfw 94bft95hbfw16abfw17a
|
PDF
|
|
|
transistors BC 458
Abstract: BC 458 transistors BC 458 pnp transistor BC 458 BC 459 transistors BC 459 bf 478 BC479 TO-18 BC-177 pnp transistor 2N5415
Contextual Info: rZ J SGS-THOMSON ¡M »iü i g¥[M «(gS GENERAL PURPOSE & INDUSTRIAL ^7# SMALL SIGNAL TRANSISTORS PNP TRANSISTORS FOR LOW LEVEL, LOW NOISE APPLICATIONS - TO 18 v CEO hFE mln/max ic fi% Type (mA) (V) 7> v CE(sat) max lcflB (mA) (V) «T min NF (MHz) (dB) (mW)
|
OCR Scan
|
bfx37bcy79bcy78bfx91+10transistors bc 458bc 458transistors bc 458 pnptransistor bc 458bc 459transistors bc 459bf 478bc479to-18 bc-177 pnp transistor2n5415
|
PDF
|
BFW 10 fet
Contextual Info: BFW12 BFW13 J V N-CHANNEL SILICON FETS Sym m etrical n-channel silicon planar epitaxial junction field-effect transistors in TO-72 metal envelopes w ith the shield lead connected to the case. The transistors are intended for battery powered equipment and other low current-low voltage applications.
|
OCR Scan
|
bfw12bfw13003s7a4bb53t31+1bfw 10 fet
|
PDF
|
bfw10 equivalent
Abstract: BFW10 BFW10 in drain resistance transistors BFW10 BFW11 bfw11 equivalent 400M C15-015
Contextual Info: BFW10 BFW11 N-CHANNËL SILICON FETS Symmetrical n-channel silicon planar epitaxial junction field-effect transistors in TO -72 metal envelopes with the shield lead connected to the case. The transistors are designed for broad band amplifiers 0 to 300 MHz . Their very low noise at low frequencies makes these devices very suitable for differential
|
OCR Scan
|
bfw10bfw11bfw10 equivalentbfw10 in drain resistance+4transistors bfw10bfw11 equivalent400mc15-015
|
PDF
|
59VIII
Abstract: 79VIII BCY 62 59IX BCY 68 79-IX BCY57 BCY58VII BCY58VIII T018
Contextual Info: BHARAT ELEK/SEfllCOND DI 47E D • 14353^0 □□□□013 72? ■ B E L l T '"Zf'OÍ VCE Si Device No VCEO VCBO Volts mm Volts mm V ebo Vofts mm hFE at bias min /max Ic mA VCE Volts 1CM mA max Ptol mW max ICBO <A typ (Sat Volts typ fT MHz typ Cob pF typ
|
OCR Scan
|
bcy57bcy58viibcy58viii59viii+11100min78vii78viii79vii79viiibfw10bcy 6259ixbcy 6879-ixt018
|
PDF
|
transistor BD 540
Abstract: Transistor BFT 99 Transistor BFR 39 BFW 10 fet Transistor BFR 80 Transistor BFT 10 transistor BFT 41 371b Transistor BFT 42 TRANSISTOR bd 108
Contextual Info: 6 0 9 y e a MICRO ELECTRONICS CORF D E | b [ m 7 f i a DOGObS? D | 02 82D 00657 D *7^ 12.5?“ N O. B C W 94 BCW 95 BCW 96 BCW 97 B C X 25 BCX26 B C X 40 B C X 45 BCX 46 ' ' M AXIM UM R A T IN G S V C E S A T Ul u. TYPE X P O L A R IT Y Medium Kower Am plifiers and Switches
|
OCR Scan
|
609yeabcw94o-92fbcw96+12bcw95bcw97transistor bd 540transistor bft 99transistor bfr 39bfw 10 fettransistor bfr 80transistor bft 10transistor bft 41371btransistor bft 42transistor bd 108
|
PDF
|
2sd 5023
Abstract: transistor BC 945 2SC 9012 bc 9013 transistor bc 855 9416A Transistor BC345 BFY41 bcx 388 BC 945
Contextual Info: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE •c (A) VCEO IV) min 40 35 40 40 40 VCE(SAT) max ■c (A) (VÏ COMPLE MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1
|
OCR Scan
|
-26unf-2ao-48d2sd 5023transistor bc 945+82sc 9012bc 9013transistor bc 8559416atransistor bc345bfy41bcx 388bc 945
|
PDF
|
2sd 5023
Abstract: bc 9013 bc 9013 g 2SC 9012 2218A cs9012 BC526 transistor BC 945 BC287 Transistor BC345
Contextual Info: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE ic (A) VCEO IV) min max 40 35 40 40 40 120 VCE(SAT) max (A) (Vï COMPLE MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1
|
OCR Scan
|
13llsdto-392sd 5023bc 9013+8bc 9013 g2sc 90122218acs9012bc526transistor bc 945bc287transistor bc345
|
PDF
|
BF272
Abstract: ampli lineaire AMPLI LINEAIRE FM Transistor BFR 96 if amplifier BF167 cb amplifier BF509 L 146 CB BF199
Contextual Info: 4 0. 900 MHz class A linear for CATV/MATV applications f\ TYPE POLARITY classe A linéaire pour amplificateurs d'antenne PACKAGE @ V BR CEO min. (V) (M Hz) le Im A) C l2e C22b* (pF) l\IF @ (dB) BFX 89 BFY90 BFR 99 BFR 38 N N P P TO-72 TO-72 TO-72 TO-72
|
OCR Scan
|
bf272bf1300cb-146ampli lineaire+8ampli lineaire fmtransistor bfr 96if amplifierbf167cb amplifierbf509l 146 cbbf199
|
PDF
|
MRF245
Abstract: PT8828 BFY70 J0303 CM-501 sd1238 2N6096 RF Transistor S10-12 2N4932 BLY94
Contextual Info: 960. 1215 MHz class C pulse for DME/IFF/TACAN transistors pour applications D M E /IFF/TAC A N puisées, classe C TYPE PACKAGE CONFIG. V cc V SD 1528 .280 4L STU D (A) S D 1528-1 .280 4LSL (A) S D 1528-8 .250 2LFL HERM SD 1530 .280 4L STU D (A) SD 1530-1
|
OCR Scan
|
cb-403cb-410cb-303cb-4111+16cb-306cb-4071cb-404cb-408cb-40952n6082mrf245pt8828bfy70j0303cm-501sd12382n6096rf transistor s10-122n4932bly94
|
PDF
|
BFR99
Abstract: BC377 UHF UHF Transistors transistor 2n 3839 BFR38 t 3866 transistor 2N956 BFX89 BSX33 uhf amplifier
Contextual Info: SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL SMALL SIGNAL TRANSISTORS TRANSISTORS FOR RADIO FREQUENCY APPLICATIONS Noise figure Trans. Freq. Max ratings Polar. Type Main unction Package •c NF (MHz (mA) 1000 le f pg m (mA) (MHz) m 3 3.5 3 800 850 1000 typ 1200
|
OCR Scan
|
bfr38bsx332n956bfr99+6bc377uhf uhf transistorstransistor 2n 3839t 3866 transistorbfx89uhf amplifier
|
PDF
|