BFX90
Abstract: High-Voltage Amplifiers BFX91 BFX 50 G3168
Contextual Info: BFX90 BFX91 SILICON PLANAR PNP H IG H -VO LTA G E AM PLIFIERS The BFX 90 and BFX 91 are silicon planar epitaxial PNP transistors in Jedec T O -1 8 BFX 90 and Jedec T O -3 9 (BFX 91) metal cases. Both devices feature high voltage, high gain, low noise and excellent current gain linearity
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BFX90
Abstract: BFX91
Contextual Info: BFX90 BFX91 SILICON PLANAR PNP H IG H - V O L T A G E A M P L IF IE R S The BFX 90 and BFX 91 are silicon planar epitaxial PNP transistors in Jedec TO-18 BFX90 and Jedec TO-39 (BFX 911) metal cases. Both devices feature high voltage, high gain, low noise and excellent current gain linearity
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BFX91
Abstract: BFX90-BFX91 BFX90
Contextual Info: BFX90 BFX91 HIGH-VOLTAGE AMPLIFIERS DESCRIPTION The BFX90 and BFX91 are silicon planar epitaxial PNP transistors in Jedec TO-18 BFX90 and Jedec TO-39 (BFX91) metal cases. Both devices feature high voltage, high gain, low noise and excellent current gain linearity from 10 µA
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SM 3119 Na
Contextual Info: 3QE D • 7^2^537 QQ3DTT^ 7 ■ r Z Z S G S -T H O M S O N “ 7# G * lim i m « § BFX90 BFX91 S G S - THOMSON HIGH-VOLTAGE AMPLIFIERS DESCRIPTIO N The BFX90 and BFX91 are silicon planar epitaxial PNP transistors in JedecTO-18 (BFX90 and Jedec TO-39 (BFX91) metal cases.
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BFX91
Abstract: BFX90-BFX91
Contextual Info: SGS-THOMSON BFX90 BFX91 R!tlD EæilLI(g'iri iD(SS HIGH-VOLTAGE AMPLIFIERS D E S C R IP T IO N The BFX90 and BFX91 are silicon planar epitaxial PNP transistors in JedecTO-18 (BFX90 and Jedec TO-39 (BFX91) metal cases. Both devices feature high voltage, high gain, low
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TDA0161 equivalent
Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:
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tda0161 equivalent1n3393bdx54f equivalentbyt301000+6bux transient voltage suppressorst90r9ua776mhsgs 2n3055transistor morocco mje13007inmos transputer reference manual
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AL102 ATES
Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible
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trans-611dt15212n2270bc107-182ks+16esc182kasesc182kbsesc1q8-183kseic183kbs8c183kcsbc109-184ksal102 ates2n2222a mpskr206ad149tis58tis88sft3532n24312n4265bfy29
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BFR 450
Abstract: BFR36 BFY 93 bft95 BFw 94 BFR10 BFR96 BFT95H BFW16A BFW17A
Contextual Info: PROFESSIONAL TRANSISTORS continued ex. (5) (s \ œ •Q o œ -a Ll_ z £3. > 'i < o LU U_ .£= BFR10 NPN NPN BFR 11 NPIM B F R 36 B FR 37 NPN B FR 38 PNP BFR 90* NPN NPN B FR 91* B F R 96* NPN BF R97/2N 3866 NPN B F R 98/2N 4427 NPN PNP BFR 99 PNP BFT95
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BFX31
Abstract: BFX37 BFX90 BCY59 BFR16 BFW43 BFW44 BFX91 033A1
Contextual Info: *“v CEO co oo cn tn o o o o o o »\ / /W\ 'v' 25/80 40/100 40/100 80/200 80/200 hFE min/typ 50 10 10 10 10 lc mA 0.1-100 0.01-50 0.01-50 0.01-50 0.01-50 lc RANGE (mA) 50 10 10 10 10 lCBO max (nA) 90 50 50 60 60 fT (MHz) 3.5 5 5 5 5 Cob <PF> T O -39
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11ta0a12a025aa0290u0u55+16a0291a0292a0305a0306a0a56a0a59aeg diode si 61 laeg diodes d6sgs transistorsbc23bsiliconix u315mz306by126bcv59ac1282n3680
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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sx3704ap239transistor 801398c547+66c131cin2222a2n50b2n2064radio ac176 ac126sft353
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BSX19 equivalent
Abstract: BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868
Contextual Info: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX PRODUCT GUIDE SELECTION GUIDE CROSS REFERENCE HANDLING PRECAUTION QUALITY SURFACE MOUNTING CASE: SOT-23 DATASHEETS PACKAGES Page 4 5 7 9 14 24 25 30 35 419 INTRODUCTION This databook contains datasheets covering the range of discrete devices for small
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ot-23bsx19 equivalentbc350bc107+7bfw63bcw17short data on 2n744transistor bc2872n3020bc4512n2868
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2SA1281
Abstract: 2SA1281C 2NS401 2SA949Y 2SA429G 2SA1013-0 C 2N4888 2SA429GTM 2SA429 2SA778AK
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number S 10 >= AST5401 2NS401 S05401 TMPT5401 2SA429 2SA940 2SA778K 2SA949 2SA429G-TM-0 2SA12000 lS 20 2S 30 -40 45 SO ~:dl~~r:C PN4888 PN4888 PN4889 PN4889 PN4889 2N4888 2SA916 2SA916 FairchildSC CentralSemi FairchildSC
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SO930
Abstract: SO918 BSX28 BCW67B SOT-223 SO5400 low noise transistors vhf So642 2n2222a SOT223 BCY70 bfx40
Contextual Info: TRANSISTORS SMALL SIGNAL TO-18 TO-39 TO-72 SOT-223 TO-126/SOT-32 SOT-23 TRANSISTORS FOR RADIO FREQUENCY APPLICATIONS Max rating Polarity VCEO V NPN NPN NPN PNP PNP NPN NPN NPN NPN NPN NPN NPN NPN NPN 15 12 15 25 25 25 25 20 30 15 15 20 30 20 IC Type Ptot
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o-126/sot-32ot-223ot-232n2857+162n5179bfx89bfr99abfr99bfw16abfw17aso930so918bsx28bcw67b sot-223so5400low noise transistors vhfso6422n2222a sot223bcy70bfx40
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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BFX90
Abstract: BFR18 bfx74a BFR16 BFW43 BFW44 BFX38 BFX39 BFX40 BFX41
Contextual Info: 01 - — — — — - 051? 051? 081? 081? 081? 03£ 0Z£ 081? 081? 91 91 OZ OZ g n n L L L 9 9 91 10 01 8L 8L 91 00 00 91 00 91 9L 00 9 9 00 L 01 001 01 9ZL ZL 9'0 — 90 9> 98 9'17 98 98 S'17 817 Z — Z 817 Z 98 50 98 S'0 09 05 05 OS 093 06 06 OZI OLL 001
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APY12
Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP
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edition-1978ausgabe-1978bs3934so-26+12ot-114ns371apy12byy32ac176aey26bav77bby20bd545bbav27transistor kt 209 maf367
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