BDT85 Search Results

BDT87F

Abstract: NPN Transistor VCEO 80V 100V transistor 83F BDT81F BDT83F BDT85F TC2536
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDT81F/83F/85F/87F DESCRIPTION •DC Current Gain -hFE = 40 Min @ IC= 5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 60V(Min)- BDT81F; 80V(Min)- BDT83F; 100V(Min)- BDT85F; 120V(Min)- BDT87F

MAX2136

Abstract: t331t BDT81F BDT82F BDT83F BDT84F BDT86F BDT87F BDT88F
Contextual Info: BDT81F; BDT83F BDT85F; BDT87F PHILIPS international SbE D • VLlOflEh 0 Q 4 3 3 1 S LS'i ■ PHIN SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SOT186 envelope w ith an electrically insulated mounting base. PNP complements are BDT82F, BDT84F, BDT86F and BDT88F.

SOT87

Abstract: BDT86 BDT88 BDT81 BDT82 BDT83 BDT84 BDT85 BDT87 l82a
Contextual Info: / MAGNA BDT81; BDT83 BDT85; BDT87 SILICON POWER TRANSISTORS N-P-N epitaxial base transistors in a T O -2 2 0 plastic envelope, designed for use in audio output stages and generai am plifier and switching applications. P-N-P complements are B D T 8 2 , B D T 84, B D T86 and BD T88.

BDT85

Abstract: BDT87 BDT81 BDT82 NPN Transistor VCEO 80V 100V BDT83
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDT81/83/85/87 DESCRIPTION •DC Current Gain -hFE = 40 Min @ IC= 5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 60V(Min)- BDT81; 80V(Min)- BDT83; 100V(Min)- BDT85; 120V(Min)- BDT87

BDT84

Abstract: PHILIPS 1N BDT88 BDT81 BDT82 BDT83 BDT85 BDT86 BDT87 10-J11
Contextual Info: BDT81; BDT83 BDT85; BDT87 PHILIPS INT ERN ATI ON AL SLE T> m 7110â2b 00H330b 355 • PHIN SILICON PO W ER TRANSISTO RS N-P-N epitaxial base transistors in aTO-220 plastic envelope, designed for use in audio output stages and general amplifier and switching applications.

Contextual Info: BDT81F; BDT83F l^BDT85F; BDT87F J SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SO T 186 envelope with an electrically insulated mounting base. PNP complements are BDT82F, BDT84F, BDT86F and BDT88F. Q U IC K R E F E R E N C E D A T A

Contextual Info: BDT81F; BDT83F BDT85F; BDT87F PHILIPS i n t e r n a t i o n a l 5 bE D • 7 1 1 0 fiSh G G 4 3 3 1 S bSi ■ PHIN SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SO T186 envelope w ith an electrically insulated mounting base.

BDT88

Contextual Info: BDT81; BDT83 BDT85; BDT87 PHILIPS INTERNATIONAL SbE T> m 2 7 1 1 0 0 2 b 0 0 4 3 3 0 b 3SS « P H I N SILICON POW ER TRAN SISTO RS N-P-N epitaxial base transistors in aTO-220 plastic envelope, designed for use in audio output stages and general amplifier and switching applications.

BDT85

Abstract: BDT81 BDT88 BDT84 BDT87 BDT82 BDT83 BDT86
Contextual Info: J BDT81; BDT83 BDT85; BDT87 ^ SILICON POWER TRANSISTORS N-P-N epitaxial base transistors in a T0-220 plastic envelope, designed fo r use in audio output stages and general amplifier and switching applications. P-N-P complements are BDT82, BDT84, BDT86 and BDT88.

BDT86 equivalent

Abstract: BDT88 BDT84 BDT81 BDT82 BDT83 BDT85 BDT86 BDT87 BDT82 Transistor
Contextual Info: PNP BDT82 – BDT84 – BDT86 – BDT88 NPN BDT81 – BDT83 – BDT85 – BDT87 SILICON POWER TRANSISTOR The BDT82 – BDT84 – BDT86 – BDT88 are PNP epitaxial base transistors in a TO-220 plastic envelope. They are intended for use in audio output stages and general amplifier and switching appications.

Contextual Info: BDT81; BDT83 BDT85; BDT87 _ y v SILICON POWER TRANSISTORS N-P-N epitaxial base transistors in aTO-220 plastic envelope, designed fo r use in audio output stages and general amplifier and switching applications. P-N-P complements are BDT82, BDT84, BDT86 and BDT88.

BDT81F

Abstract: BDT82F BDT83F BDT84F BDT85F BDT86F BDT87F BDT88F
Contextual Info: BDT81F; BDT83F J l^BDT85F; BDT87F SILICON EPITAXIAL POWER TRANSISTORS N PN silicon epitaxial power transistors, each in a SO T 1 8 6 envelope with an electrically insulated mounting base. PNP complements are B D T 8 2 F , B D T 8 4 F , B D T 8 6 F and BD T88F.

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

Contextual Info: N AMER PHILIPS/DISCRETE 2SE D • 1^53=131 OOlTfiSS T ■ BDT82; BDT84 BDT86; BDT88 A T - 33-23 SILICON POWER TRANSISTORS P-N-P epitaxial base transistors in a TO-220 plastic envelope, designed for use in audio output stages and general amplifier and switching applications.

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

diode IN4148

Abstract: Transistor Equivalent list BDT85 IN4148 LXE18300X SC15 1250-003 BY239-800 Transistor AND DIODE Equivalent list
Contextual Info: # I » IK DISCRETE SEMICONDUCTORS SG41EET L X E 1 83 00 X NPN silicon planar epitaxial microwave power transistor Preliminary specification File under Discrete Semiconductors, S C 1 5 January 1992 Philips Semiconductors PHILIPS • b b S B ^ l D03SÜ73 ‘•T‘1 ■

BY239-800

Abstract: MGA247 BDT85 LLE16120X SC15 resistor 3.3 k Class D Amplifier Circuit
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LLE16120X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR amplifier. • Interdigitated structure provides

Transistor Equivalent list

Abstract: diode IN4148 Transistor AND DIODE Equivalent list copper permittivity TRIMMER capacitor by239-800 erie feedthrough capacitors BDT85 IN4148 LXE16350X
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VS W R • Interdigitated structure provides high emitter efficiency

DK53

Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513
Contextual Info: BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240

TRANSISTOR DATASHEET D1555

Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Contextual Info: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440

Transistor Equivalent list

Abstract: Transistor AND DIODE Equivalent list capacitor feed-through
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very

BDT85

Abstract: LLE16120X potentiometer Sfernice BY239-800
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LLE16120X NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors

LLE18100X

Abstract: MRA543 1702 NPN transistor transistor 431 ab BDT85 MCD660 MRA542 transistor w 431
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LLE18100X NPN silicon planar epitaxial microwave power transistor Product specification November 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor LLE18100X FEATURES