BDT84 Search Results

MAX2136

Abstract: t331t BDT81F BDT82F BDT83F BDT84F BDT86F BDT87F BDT88F
Contextual Info: BDT81F; BDT83F BDT85F; BDT87F PHILIPS international SbE D • VLlOflEh 0 Q 4 3 3 1 S LS'i ■ PHIN SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SOT186 envelope w ith an electrically insulated mounting base. PNP complements are BDT82F, BDT84F, BDT86F and BDT88F.

BDT88

Abstract: BDT81 BDT82 BDT83 BDT84 BDT85 BDT86 BDT87
Contextual Info: N AMER PHILIPS/DISCRETE S5E D • ^53=131 OOlTäS.S “J ■ Jl ‘' BDT82; BDT84 BDT86; BDT88 T - 3 3 - 2 3 SILICON POWER TRANSISTORS P-N-P ep itaxial base transistors in a T 0 - 2 2 0 plastic envelope, designed fo r use in audio o u tp u t stages and general a m p lifie r and switching applications.

BDT84

Abstract: BDT88 tcj 103 BDT81 BDT82 BDT83 BDT85 BDT86 BDT87 MSA060
Contextual Info: BDT82; BDT84 BDT86; BDT88 SILICON POW ER T R A N SIST O R S P-N-P epitaxial base transistors in a TCJ-220 plastic envelope, designed for use in audio output stages and general amplifier and switching applications. N-P-N complements are B D T 8 1, B D T 8 3, B D T 8 5 and BD T87.

BDT81F

Abstract: BDT82F BDT83F BDT84F BDT85F BDT86F BDT87F BDT88F MAX2136
Contextual Info: BDT82F; BDT84F BDT86F; BDT88F PHILIPS INTERNATIONAL 5 bE D • 711002b 0043320 725 H I P H I N T -37-11 SILICON EPITAXIAL POWER TRANSISTORS PIMP silicon epitaxial power transistors, each in a SO T186 envelope w ith an electrically insulated mounting base.

Contextual Info: BDT81F; BDT83F l^BDT85F; BDT87F J SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SO T 186 envelope with an electrically insulated mounting base. PNP complements are BDT82F, BDT84F, BDT86F and BDT88F. Q U IC K R E F E R E N C E D A T A

Contextual Info: N AMER PHILIPS/DISCRETE 2SE D • 1^53=131 OOlTfiSS T ■ BDT82; BDT84 BDT86; BDT88 A T - 33-23 SILICON POWER TRANSISTORS P-N-P epitaxial base transistors in a TO-220 plastic envelope, designed for use in audio output stages and general amplifier and switching applications.

BDT88F

Abstract: 36 TI BBL BDT86
Contextual Info: BDT82F; BDT84F BDT86F; BDT88F PHILIPS INTERNATIONAL 5bE » • 711üfl2b D D M 3 3 2 Q 72S ■ PH IN T— SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors, each in a SOT186 envelope with an electrically insulated mounting base. NPN complements are BDT81F, BDT83F, BD T85F and BDT87F.

BDT88F

Abstract: BDT82F BDT84F BDT86F
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors BDT82F/84F/86F/88F DESCRIPTION •DC Current Gain -hFE = 40 Min @ IC= -5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -60V(Min)- BDT82F; -80V(Min)- BDT84F; -100V(Min)- BDT86F; -120V(Min)- BDT88F

3m421

Abstract: "Silicon Power Transistors" T8480
Contextual Info: BDT82; BDT84 BDT86; BDT88 PHILIPS INTERNATIONAL SbE D • TllDflEb D D M 3 3 m 421 H P H I N T -31-Z 3 SILICON POWER TRANSISTORS P-N-P epitaxial base transistors in a T 0 -2 2 0 plastic envelope, designed fo r use in audio output stages and general am plifier and switching applications.

BDT85

Abstract: BDT81 BDT88 BDT84 BDT87 BDT82 BDT83 BDT86
Contextual Info: J BDT81; BDT83 BDT85; BDT87 ^ SILICON POWER TRANSISTORS N-P-N epitaxial base transistors in a T0-220 plastic envelope, designed fo r use in audio output stages and general amplifier and switching applications. P-N-P complements are BDT82, BDT84, BDT86 and BDT88.

BDT88

Abstract: BDT81 BDT82 BDT83 BDT84 BDT85 BDT86 BDT87
Contextual Info: BDT82; BDT84 BDT86; BDT88 PHILIPS INTERNATIONAL SbE D • 711Qfl2b 0043314 421 ■ PHIN T -3 1 -2 3 SILICON POWER TRANSISTORS P-N-P epitaxial base transistors in a T 0-22 0 plastic envelope, designed fo r use in audio o u tp u t stages and general am plifier and switching applications.

BDT86 equivalent

Abstract: BDT88 BDT84 BDT81 BDT82 BDT83 BDT85 BDT86 BDT87 BDT82 Transistor
Contextual Info: PNP BDT82 – BDT84 – BDT86 – BDT88 NPN BDT81 – BDT83 – BDT85 – BDT87 SILICON POWER TRANSISTOR The BDT82 – BDT84 – BDT86 – BDT88 are PNP epitaxial base transistors in a TO-220 plastic envelope. They are intended for use in audio output stages and general amplifier and switching appications.

Contextual Info: BDT81; BDT83 BDT85; BDT87 _ y v SILICON POWER TRANSISTORS N-P-N epitaxial base transistors in aTO-220 plastic envelope, designed fo r use in audio output stages and general amplifier and switching applications. P-N-P complements are BDT82, BDT84, BDT86 and BDT88.

Contextual Info: BDT82; BDT84 BDT86; BDT88 _ y v SILICON POWER TRANSISTORS P-N-P epitaxial base transistors in a TO-220 plastic envelope, designed for use in audio output stages and general am plifier and switching applications. N-P-N complements are BD T81, BD T83, B D T 85 and BDT87.

BDT84

Abstract: PHILIPS 1N BDT88 BDT81 BDT82 BDT83 BDT85 BDT86 BDT87 10-J11
Contextual Info: BDT81; BDT83 BDT85; BDT87 PHILIPS INT ERN ATI ON AL SLE T> m 7110â2b 00H330b 355 • PHIN SILICON PO W ER TRANSISTO RS N-P-N epitaxial base transistors in aTO-220 plastic envelope, designed for use in audio output stages and general amplifier and switching applications.

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

BDT88

Contextual Info: BDT81; BDT83 BDT85; BDT87 PHILIPS INTERNATIONAL SbE T> m 2 7 1 1 0 0 2 b 0 0 4 3 3 0 b 3SS « P H I N SILICON POW ER TRAN SISTO RS N-P-N epitaxial base transistors in aTO-220 plastic envelope, designed for use in audio output stages and general amplifier and switching applications.

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

FET BFW10

Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Contextual Info: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI

2SD556 sanken

Abstract: SDT9207 SM2176 2sd556 KT819G SDT9202 Bd184 SDT9803 KT818G 2N3055-7
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CE Of) PD Max toN Max (A) (s) ICBO Max hFE »T ON) Min (Hz) r (CE)ut Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . . 5 . . . .10 . . . .15

TXD10K40

Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Contextual Info: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40