MSA060 Search Results

P112

Abstract: TIP111 darlington npn tip 102 TIP110 TIP112 TIP115 TIP116
Contextual Info: TIP110 TIP111 TIP112 PHILIPS INTERNATIONAL SbE D • 711002b 0043550 224 ■ PHIN T -3 3 -Z SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in m onolithic Darlington circu it fo r audio o u tp u t stages and general purpose am plifier and switching applications. T 0-220A B plastic envelope. P-N-P complements are

BT153

Abstract: TAG thyristor Thyristor TAG thyristor TAG 13 BT153 fast turn off philips thyristor 239 thyristor TRIGGER PULSE TRANSFORMER 7Z82062
Contextual Info: PHILIPS INTERNATIONAL SflE J> 7110fl2t, 0053035 301 • PHIN B l iby _y F A S T TURN-OFF TH YR IS TO R Glass-passivated fast-turn-off thyristor in a T 0 -2 2 0 A B envelope, intended fo r use in inverter, pulse and switching applications. Its characteristics make the device extremely suitable for use in regulator,

bd947

Abstract: b0945 BD945 m lc 945 BD943 BD944
Contextual Info: BD943 BD945 BD947 H ILIPS INTERNATIONAL _ SbE J> H 711002b 0043070 SOfl • PHIN SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifier applications. P-N-P complements are BD944; 946 and 948.

transistor GR 338

Abstract: BTW58 BTW58-1000R lt 332 diode A 1098 LT BTW58 1200 1300R Transistor sae 103 Gate Turn-Off Thyristors IEC134
Contextual Info: SÔE D PHILIPS INTERNATIONAL 711002b DO S 3 1 E b 2flT H P H I N BTW58 SERIES FAST GATE TURN-OFF THYRISTORS Thyristors in T0-220A B envelopes capable o f being turned both on and o ff via the gate. They are suitable fo r use in high-frequency inverters, resonant power supplies, m otor control, horizontal

M1434

Abstract: Gate Turn-Off Thyristors LS025 BTV58 BTV58-600R 600R CG10A 1000R
Contextual Info: PHILIPS 5ÔE D INTERNATIONAL • 7110ÖEb 0053003 OtM Bi PHIN BTV58 SERIES J \ _ FAST GATE TURN-OFF THYRISTORS T h y risto rs in T 0 - 2 2 0 A B envelopes capable o f being turned both on and o f f via the gate. T h e y are suitable fo r use in high-frequency inverters, pow er supplies, m otor c o n tro l etc. T h e devices have no

HP MMIC INA

Abstract: mmic distributed amplifier INA-10386 mps 0736 mmic ina MSA-0404 low noise amplifier ghz amplifier TRANSISTOR 12 GHZ MSA-0520 gaas Low Noise Amplifier
Contextual Info: HP RFIC and MMIC Amplifiers Field Values 20-Nov-97 DocPDF DocName Title Subject Author Keywords pdf_docs\amps\00_FRON Hewlett-Packard A Leader in T\I_III.PDF Components Hewlett-Packard A Leader in Components pdf_docs\amps\00_FRON Alphanumeric Index T\VII_XII.PDF

BDT65

Abstract: bdt65c bdt64
Contextual Info: BDT64;- 64A BDT64B; 64C PHILIPS INTERNATIONAL SbE D • 711002b 0043274 T1S MPHIN T -1 3 '7 / SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial base transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier and switching applications. T0-220 plastic envelope. NPN complements are BDT65,

TIP126

Abstract: TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT
Contextual Info: _ PHILIPS INTERNATIONAL TIP125 TIP126 TIP127 J{ SbE ]> • 711DÖEL 0D435bfl M b 4 M P H I N T-33-ZI SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxiai-base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. T 0-22 0 plastic envelope. N-P-N complements are TIP120, TIP121

BTV58-600R

Abstract: 1000R BTV58
Contextual Info: SfiE » PHILIPS INTERNATIONAL • 7 1 1 D Ö E b 0 0 5 3 0 0 3 QbM « P H I N BTV58 SERIES J v._ FAST GATE TURN-OFF THYRISTORS Thyristors in T 0-22 0A B envelopes capable o f being turned both on and o ff via the gate. They are suitable fo r use in high-frequency inverters, power supplies, m otor control etc. The devices have no

D 1991 AR

Abstract: BD852 transistor d 1991 ar TRansistor 648 DIODE 646 on 651 diode
Contextual Info: BD644; 646; 648 _ j \ BD650^652_ PHILIPS INTERNATIONAL SbE D • 7 1 1 0 0 2 b □ D M E C144 7 b 7 H P H I N T -33-31 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Darlington circuit. They are housed in a T 0 -2 2 0

bdt65b

Contextual Info: BDT65; 65A BDT65B; 65C V PHILIPS INTERNATIONAL SbE D • 7 1 I G Ö 5 L □ □ 4 3 2 ‘ia Ibfl « P H I N SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial base transistors in m onolithic Darlington circuit for audio output stages and general purpose am plifier and switching applications. T 0-2 2 0 plastic envelope. PNP complements are

T2D 22 diode

Abstract: T2D 56 DIODE T2D DIODE diode t2d 05 T2D 70 diode
Contextual Info: BDT60;60A BDT60B;60C y v SILICON DARLINGTON POWER TRANSISTORS P-N-P silicon power transistors in monolithic Darlington circuit fo r audio output stages and general purpose amplifier applications. N-P-N complements are BDT61, BDT61A, BDT61B and BDT61C. QUICK REFERENCE DATA

Contextual Info: N ANER PHILIPS/DISCRETE b3E bb53331 DD273SD 6^3 * A P X D BT152 SERIES y v THYRISTORS Glass-passivated thyristors in TO—220AB envelopes, which are particularly suitable in situations creating high fatigue stresses involved in thermal cycling and repeated switching. Applications

BT145

Contextual Info: N APIER P H IL IP S/ D IS CR ET E bTE D bbS3T31 00275bfi flflT • APX BT145 SERIES THYRISTORS Glass-passivated 25 ampere thyristors intended for use in applications involving high fatigue stress due to thermal cycling and repeated switching. These thyristors feature a high surge current

BU603

Contextual Info: i i N AMER PHILIPS/DISCRETE b'iE D • bbSa^l IAPX 0020270 bib '' BU603 SILICO N DIFFUSED PO W ER T R A N SIST O R S High-voltage, high-speed, glass-passivated npn power transistors in a TO 220 envelope intended for use in power supplies and deflection circuits for colour receivers and monitors.

F266

Abstract: AF266 BUV26 BUV26A
Contextual Info: I I D N AUER PHIL I P S / D I S C R E T E 0020440 740 BUV26 BUV26A ^ 5 3 1 3 1 J SILICON POWER TRANSISTORS High-speed, glass-passivated npn pow er transistors in a T 0 -2 2 0 envelope intended fo r fast sw itching applications such as high frequency and e fficie n cy converters, sw itching regulators and m o to r c o n tro l.

BDT84

Abstract: BDT88 tcj 103 BDT81 BDT82 BDT83 BDT85 BDT86 BDT87 MSA060
Contextual Info: BDT82; BDT84 BDT86; BDT88 SILICON POW ER T R A N SIST O R S P-N-P epitaxial base transistors in a TCJ-220 plastic envelope, designed for use in audio output stages and general amplifier and switching applications. N-P-N complements are B D T 8 1, B D T 8 3, B D T 8 5 and BD T87.

AVANTEK

Abstract: Avantek amplifier AVANTEK MSA MSA-0600 MSA-0600-GP2 MSA-0600-GP4 MSA-0600-GP6
Contextual Info: O a v a n te k MSA-0600 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Avantek Chip Outline' Features • Cascadable 50 £2 Gain Block • Low Operating Voltage 3.5 V typical Vd • 3 dB Bandwidth: DC to 1.0 GHz • High Gain: 19.5 dB typical at 0.5 GHz

MMIC sot-363

Abstract: msa0304 Micro-X Ceramic msa-0835 MSA0270
Contextual Info: warn H E W L E T T f t x f l PACKARD RFIC and MMIC Amplifiers Selection Guides Fixed Gain RFIC Amplifiers in order from lowest to highest frequency Part Number Type Frequency NF Range (GHz) (dB) Gain P ldB (dB) (dBm) MSA-2111 MSA-3111 MSA-3135 MSA-3185 MSA-3186

iom16c

Abstract: mitsubishi msa0600 intrm16c M30620T-RPD-E mitsubishi rs232 MSA0600 LED monitor MSA-06 MITSUBISHI Digital Echo POW10
Contextual Info: Chip No Using RTXC Real Time OS on the M16C functions for task creation, task deletion, task suspension, and task starting. 1. ABSTRACT The use of Real Time Operating Systems RTOS in embedded systems has many advantages. An RTOS allows the developer to define a task as if it

Triac slow on

Abstract: BT136 application note OM1654 triac bt151 bt134 triac dimmer triac snubber calculation triac snubber BT151 triac pin diagram of diac bt136 BT151 motor speed control
Contextual Info: Philips Semiconductors Thyristors and Triacs Philips Semiconductors publishes many Technical Publications each year on various aspects of power semiconductors. All the publications relevant to thyristors and triacs are reproduced in this chapter. They provide

philips TIP117

Abstract: tip110 st TIP110 TIP111 TIP112 TIP115 TIP116 TIP117
Contextual Info: TIP115 TIP116 TIP117 PHILIPS INTERN A T I O N A L 5bE ]> • 7110Û5L 004355b SILICON DARLINGTON POWER TRANSISTORS 742 ■ PHIN T-33- 3 I P-N-P epitaxial-base transistors in monolithic Darlington circuit fo r audio output stages and general purpose am plifier and switching applications. T O -2 2 0 A B plastic envelope. N-P-N complements are

Contextual Info: HEWLETT-PACKARD/ CMPNTS blE D T fiü l H E W L E T T mL'HMP A C K A R D • 4HH7S64 0D1DD1S Mb4 « H P A MSA-0600 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Features • • • • • Chip Outline1 Cascadable 50 Q Gain Block

BUV26

Abstract: BUV26A 11/BUV26
Contextual Info: PHILIPS INTERNATIONAL 4SE D 711002b D031GbT 1 EiPHIN BUV26 BUV26A SILICON POWER TRANSISTORS High-speed, glass-passivated npn power transistors in a T 0-22 0 envelope intended for fast switching applications such as high frequency and efficiency converters, switching regulators and motor control.