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    BDT88F Search Results

    BDT88F Datasheets (3)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    BDT88F
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 89.09KB 1
    BDT88F
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 30.97KB 1
    BDT88F
    Philips Semiconductors SILICON EPITAXIAL POWER TRANSISTORS Scan PDF 47.5KB 2

    BDT88F Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MAX2136

    Abstract: t331t BDT81F BDT82F BDT83F BDT84F BDT86F BDT87F BDT88F
    Contextual Info: BDT81F; BDT83F BDT85F; BDT87F PHILIPS international SbE D • VLlOflEh 0 Q 4 3 3 1 S LS'i ■ PHIN SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SOT186 envelope w ith an electrically insulated mounting base. PNP complements are BDT82F, BDT84F, BDT86F and BDT88F.


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    bdt81fbdt83fbpt85fbdt87f+80d4331sot186bdt82fbdt84fbdt86fbdt88fmax2136t331t PDF

    BDT81F

    Abstract: BDT82F BDT83F BDT84F BDT85F BDT86F BDT87F BDT88F MAX2136
    Contextual Info: BDT82F; BDT84F BDT86F; BDT88F PHILIPS INTERNATIONAL 5 bE D • 711002b 0043320 725 H I P H I N T -37-11 SILICON EPITAXIAL POWER TRANSISTORS PIMP silicon epitaxial power transistors, each in a SO T186 envelope w ith an electrically insulated mounting base.


    OCR Scan
    bdt82fbdt84fbdt86fbdt88f+8711002bt-33-/ot186bdt81fbdt83fbdt85fbdt87fmax2136 PDF

    Contextual Info: BDT81F; BDT83F l^BDT85F; BDT87F J SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SO T 186 envelope with an electrically insulated mounting base. PNP complements are BDT82F, BDT84F, BDT86F and BDT88F. Q U IC K R E F E R E N C E D A T A


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    bdt81fbdt83fbdt85fbdt87f+5bdt82fbdt84fbdt86fbdt88fbb53t31 PDF

    BDT88F

    Abstract: 36 TI BBL BDT86
    Contextual Info: BDT82F; BDT84F BDT86F; BDT88F PHILIPS INTERNATIONAL 5bE » • 711üfl2b D D M 3 3 2 Q 72S ■ PH IN T— SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors, each in a SOT186 envelope with an electrically insulated mounting base. NPN complements are BDT81F, BDT83F, BD T85F and BDT87F.


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    bdt82fbdt84fbdt86fbdt88f+6ot186bdt81fbdt83fbdt87f36 ti bblbdt86 PDF

    BDT88F

    Abstract: BDT82F BDT84F BDT86F
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors BDT82F/84F/86F/88F DESCRIPTION •DC Current Gain -hFE = 40 Min @ IC= -5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -60V(Min)- BDT82F; -80V(Min)- BDT84F; -100V(Min)- BDT86F; -120V(Min)- BDT88F


    Original
    bdt82f/84f/86f/88fbdt82fbdt84f-100v+4bdt86f-120vbdt88fbdt81f/83f/85f/87f PDF

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


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    bs9000d3007he4000b80ribution+10bpw22acm .02m z5u 1kvpin configuration of bfw10la4347b2x84tda3653 equivalenttriac tag 9322hef40106bp equivalentfx4054 coredsq8 PDF

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


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    sc08btransistor f6 13003equivalent transistor bj 131-6transistor eb 13003 bm+7bb112smd transistor code marking 2f 6na1211 lgcqy58bu705transistor 131-6 bj 026philips om350 PDF

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


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    lcd01bgy41bfw10 fet transistorcqy58+7germaniumrx101equivalent components fet bfw10bd643bf199283 to92 600a transistorzener phc PDF

    FET BFW10

    Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
    Contextual Info: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI


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    ba220ba221ba223ba281+16ba314ba315ba316ba317ba318ba423fet bfw10kp101afet bfw11bdx38kpz20gcqy58abfw10 fetrpw100b0943of fet bfw11 PDF