BD933 Search Results

Contextual Info: BD933F; BD935F BD937F; BD939F BD941F J SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistor in a SOT 186 envelope w ith an electrically insulated mounting base, intended fo r use in audio output stages and for general purpose amplifier applications.

BD938

Abstract: BD934 BD942 B0938 TI 936 BD934 transistor BD933 003452b
Contextual Info: BD934; 936 BD938; 940 BD942 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended for use in output stages of audio and television amplifier circuits where high peak powers can occur. N-P-N complements are BD933; 935; 937; 939 and 941.

Contextual Info: _ J BD933; 935 BD937; 939 BD941 V SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended fo r use in output stages o f audio and television amplifier circuits where high peak powers can occur.

BD941

Abstract: b 939 a BD933 BD934 BD937 IEC134 IC 935
Contextual Info: BD933; 935 BD937; 939 BD941 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended fo r use in output stages o f audio and television amplifier circuits where high peak powers can occur. P-N-P complements are BD934; 936; 938; 940 and 942.

ic 941

Abstract: BD933 transistor A 935 417 TRANSISTOR BD937 BD934 transistor IC 935 c 939 BD935 BD939
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD933/935/937/939/941 DESCRIPTION •DC Current Gain: hFE= 40 Min @ IC= 150mA ·Complement to Type BD934/936/938/940/942 APPLICATIONS ·Designed for use in output stages of audio and television

BD934

Abstract: B0937 B0941 BD937 B0939 BD941 BD934 philips BD933 IEC134 c 939
Contextual Info: BD933; 935 BD937;- 939 BD941 PHILIPS INTERNATIONAL SbE D • 7 1 1 0 fiEb 0 0 4 3 D 44 41b IPHIN SILICON EPITAXIAL BASE POWER TRANSISTORS T-Z3~0*=i N-P-N silicon transistors in a plastic envelope intended for use in output stages of audio and television amplifier circuits where high peak powers can occur.

3BS transistor

Abstract: BD937F b0933 BD935F BD939F 935F BD935 d941 BD933F BD934F
Contextual Info: BD933F; BD935F BD937F; BD939F _ _ _ _BD941F _ PHILIPS I N T E R N A T I O N A L SbE D m 711002b 0043G52 3=12 « P H I N -SILICON EPITAXIAL POWER TRANSISTORS 7^ -J 3 ~ ô '7 ' NPN silicon power transistor ina SOT186 envelope with an electrically insulated mounting base,

B0937

Abstract: b 939 a ic B0937 T3309 B0941 BD933 transistor A 935 BD934 BD937 BD941
Contextual Info: BD933; 935 BD937; 939 BD941 PHILIPS INTERNATIONAL SbE D • 711DfiEb 0043D44 MIL ■ P H I N SILICO N EPITAXIAL B A S E PO W ER T R A N S IS T O R S 7 - 3 3 - 0 * 1 N-P-N silicon transistors in a plastic envelope intended for use in output stages of audio and television

transistor BD939F

Abstract: d941 935F b0933 939f 939-F BD-939F 937f BD941F BD939F
Contextual Info: BD933F; BD935F BD937F; BD939F BD941F PHILIPS INTE RNATIONAL SbE D • TllüûSb 00M3052 S^E ■ P H I N SILICON EPITAXIAL POWER TRANSISTORS T -J 3 -0 T NPN silicon power transistor ina SO T186 envelope w ith an electrically insulated mounting base, intended fo r use in audio o utpu t stages and fo r general purpose am plifier applications.

BD939F

Abstract: 941f BD936F 935F BD933F BD934F BD935F BD937F BD938F BD940F
Contextual Info: BD933F; BD935F BD937F; BD939F BD941F SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistor in a SOT 186 envelope w ith an electrically insulated mounting base, intended fo r use in audio output stages and for general purpose amplifier applications.

Contextual Info: SEMELAB LTD •type No. SpUon'¡ty Polarl,y 37E D •c cont Package V C E 0 t’ FE @ ■ Vc e /Ic fll331fl? GG0G043 1 ■ SMLB «T PD BD746 BD 7 4 6 A BD 7 4 6 B B D7 4 6 C BD 7 4 6 D PNP PNP PNP PNP PNP SOT 9 3 SOT 9 3 SOT93 SOT 9 3 S OT 9 3 45 60 80 100

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

B0938

Abstract: B0942 B0941 BD933F BD934F BD935F BD936F BD937F BD938F BD939F
Contextual Info: BD934F; BD936F BD938F; BD940F BD942F SILICON EPITAXIAL POWER TRANSISTORS PNP Silicon power transistor in a SOT 186 envelope with an electrically insulated mounting base, intended for use in audio output stages and for general purpose amplifier applications.

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink

"Tektronix 475"

Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,

D42C5

Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is

mje521 equivalent

Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry

2N3055

Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes

2N5631 equivalent

Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —

BD179-10 equivalent

Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

sec tip41c

Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power

TRANSISTOR BC 384

Abstract: BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF47 High Voltage Power Transistor Isolated Package Applications NPN SILICON POWER TRANSISTOR 1 AMPERE 250 VOLTS 28 WATTS Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required