bd682
Abstract: BD682S
Contextual Info: BD676A/678A/680A/682 BD676A/678A/680A/682 Medium Power Linear and Switching Applications • Medium Power Darlington TR • Complement to BD675A, BD677A, BD679A and BD681 respectively TO-126 1 PNP Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base
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bd676a/678a/680a/682bd675abd677abd679a+6bd681bd676abd678abd680abd682bd682s
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BD676
Abstract: BD682 cross reference BD682 equivalent transistor BD 680 BD676 time failure transistor Bd682
Contextual Info: BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682 Plastic Medium-Power Silicon PNP Darlingtons http://onsemi.com .for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain – • • • hFE = 750 Min @ IC = 1.5 and 2.0 Adc
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bd676bd676abd678bd678a+9bd680bd680abd682bd675bd682 cross referencebd682 equivalenttransistor bd 680bd676 time failuretransistor bd682
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BD681 cross reference
Abstract: bd677as BD679AS 679a
Contextual Info: BD675A/677A/679A/681 BD675A/677A/679A/681 Medium Power Linear and Switching Applications • Medium Power Darlington TR • Complement to BD676A, BD678A, BD680A and BD682 respectively TO-126 1 NPN Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base
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bd675a/677a/679a/681bd676abd678abd680a+9bd682o-126bd675abd677abd679abd681 cross referencebd677asbd679as679a
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DK53
Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513
Contextual Info: BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240
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2n30162n30212n30222n3023+162n30242n30252n30262n30552n30762n3171dk53dk522sc4977mje102bd6992sa1046bu808dfi equivalent2n3055 replacementmj2955 replacementbuh513
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DK53
Abstract: dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037
Contextual Info: Bipolar Transistors Cross Reference INDUSTY STANDARD 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240
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2n30162n30212n30222n3023+162n30242n30252n30262n30552n30762n3171dk53dk52bu724asmje20552n3055 replacementbux98pibd263bd699bd2922n5037
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B0411
Abstract: B0733 THD200F1 dk52 2SC4977 2N5415 REPLACEMENT TIP 2n3055 BD68D SGS-Thomson cross reference BUX37 THOMSON
Contextual Info: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSOH SGS-THOMSON PAGE REPLACEMENT NEAREST PREFERRED KDUSTHY STANDARD 2N3016 2N5339 93 2N3772 2N3021 BDW52C 169 2N3789 2N3022 BDW52C BDW52C BDW52C 169 169 169 2N3790 2N3791 2N3792 BDW52C BDW52C 169 169 77 2N3863 2N3864
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2n30162n30212n30222n3023+162n30242n30252n30262n30552n30762n3171b0411b0733thd200f1dk522sc49772n5415 replacementtip 2n3055bd68dsgs-thomson cross referencebux37 thomson
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Je 243
Abstract: JE371 je240 JE171 JE340 transistor BD 341 bd189
Contextual Info: STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE STYLE 3: PIN 1. BASE 2. COLLECTOR 3. EMITTER 1 CASE 77-07 TO-225AA R e s is tiv e S w itc h in g Ic C o n t Am ps v C E O (s u s ) Volts M ax M in NPN 0.3 350 0 .5 »f @ ic US ps @ lc *T MHz Amp M ax M ax Amp
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o-225aa2n5655bd1572n5656+13mje803mje703750/18kbd681bd682je210je 243je371je240je171je340transistor bd 341bd189
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BU108
Abstract: TRANSISTOR REPLACEMENT GUIDE BD676 BD676A application note BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD676 BD676A BD678 BD678A BD680 BD680A BD682 Plastic Medium-Power Silicon PNP Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 Min @ IC = 1.5 and 2.0 Adc
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bd676bd675bd676abd678+10bd678abd680bd680abd682tip73bbu108transistor replacement guide bd676bd676a application notebu326bu100
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BUV48I
Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable
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2n30162n30212n30222n3023+162n30242n30252n30262n30552n30762n3171buv48ibu808dxibd699buv18abd241cfitransistor 2sa1046buw52ibu808dfi equivalentbu724as2sa1046
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2SC3133 cross reference
Abstract: Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288
Contextual Info: CROSS REFERENCE GUIDE TRANSISTORS TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG 2N 3903 M O TO RO LA 2N 3903 2SA1052 KSA812 2SA1298 T O S H IB A KSA1298 2N 3904 M O TO RO LA 2N 3904 2SA1072A FUJITSU KSA1050 2SA1299 M ITS UB ISH I KSA1174 2N 3905
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2n44012n54012n55512sa1004+162sa10102sa10132sa10152sa10162sa10172sa10192sc3133 cross referencehitachi 2sc281nec d882a564ad1163a2sc1815 cross referencea628akrc1211kra2203nec d288
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2N3055 plastic
Abstract: BUT11Af equivalent BU108 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 bdx54d BDX54 BUX98A 2SC140 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Full Pak High Voltage NPN Power Transistor For Isolated Package Applications The BUT11AF was designed for use in line operated switching power supplies in a wide range of end use applications. This device combines the latest state of the art
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but11aftip73btip74tip74a+15tip74btip75tip75atip75btip75c2n3055 plasticbut11af equivalentbu108npn power darlington transistors high voltage high icm to-247bdx54dbdx54bux98a2sc140bu326bu100
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BU108
Abstract: BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. • •
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tip47tip50mjd47mjd50+9tip73btip74tip74atip74btip75tip75abu108bu326bu100
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tip122 tip127 audio amp
Abstract: TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT BD226-BD227 tip122 tip127 audio board D45H111 3904 Transistor BU108 tip120 darlington TIP41 amplifier TIP121 TEXAS
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 Typ @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc
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tip120tip125tip121tip126+13tip122tip127220abtip122 tip127 audio amptip127 tip122 audio amplifier circuitbd226-bd227tip122 tip127 audio boardd45h1113904 transistorbu108tip120 darlingtontip41 amplifiertip121 texas
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MJL21194 equivalent
Abstract: MJL21193 equivalent bux48a equivalent 2N6107 equivalent BU108 MJ4502 pair BD140 npn transistor MJL21194 2N5981 pnp transistor 2N3055 typical applications
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJL21193* NPN MJL21194* Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.
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mjl21193mjl21194tip73btip74+14tip74atip74btip75tip75amjl21194 equivalentmjl21193 equivalentbux48a equivalent2n6107 equivalentbu108mj4502 pairbd140 npntransistor mjl211942n5981 pnp transistor2n3055 typical applications
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ST T4 3580
Abstract: BU108 bdw93c applications transistor bd136 in dpak packaging 2SC103 ir411 TRANSISTOR BC 384 BDX54 2SB56 IC 714
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJD243* Plastic Power Transistor DPAK For Surface Mount Applications *Motorola Preferred Device . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 100 Vdc (Min) @ IC = 10 mAdc
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mjd243tip73btip74tip74a+16tip74btip75tip75atip75btip75c2n6488st t4 3580bu108bdw93c applicationstransistor bd136 in dpak packaging2sc103ir411transistor bc 384bdx542sb56ic 714
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bu806 REPLACEMENT
Abstract: k 3569 BU108 2SD211 BU806 NSP2100 TL MJE2955T 2SC1943 2SC1419 BU326
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal deflection circuits in TV’s and CRT’s.
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220abbu806tip73btip74+15tip74atip74btip75tip75atip75btip75cbu806 replacementk 3569bu1082sd211nsp2100tl mje2955t2sc19432sc1419bu326
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MJE15020
Abstract: DTS423 mje15033 replacement 2SC243 BD388-5 2SC1826 BD263 2SC1903 SE9302 2SA698
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE340 Plastic Medium Power NPN Silicon Transistor 0.5 AMPERE POWER TRANSISTOR NPN SILICON 300 VOLTS 20 WATTS . . . useful for high–voltage general purpose applications. • Suitable for Transformerless, Line–Operated Equipment
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mje340tip73btip74tip74a+16tip74btip75tip75atip75btip75c2n6488mje15020dts423mje15033 replacement2sc243bd388-52sc1826bd2632sc1903se93022sa698
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pin configuration NPN transistor BD679
Abstract: 2SC101 pin configuration NPN transistor BD 677 BU108 TIP120 equivalent 2SC7 2N6052 equivalent 2SC558 BDX54 2SC1943
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD675 BD675A BD677 BD677A BD679 BD679A BD681* Plastic Medium-Power Silicon NPN Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 Min @ IC = 1.5 and 2.0 Adc
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bd675bd676bd675abd677+15bd677abd679bd679abd681tip73bpin configuration npn transistor bd6792sc101pin configuration npn transistor bd 677bu108tip120 equivalent2sc72n6052 equivalent2sc558bdx542sc1943
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2N5686 motorola
Abstract: 2N5685 equivalent BU108 MJ15024 MJ15025 AUDIO AMPLIFIER 2N5686 2SA49 2SC140 2N5685 MJ1000 NSP2100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N5684 High-Current Complementary Silicon Power Transistors NPN 2N5685 2N5686* . . . designed for use in high–power amplifier and switching circuit applications. • High Current Capability — IC Continuous = 50 Amperes.
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2n56842n56852n5686tip73b+15tip74tip74atip74btip75tip75atip75b2n5686 motorola2n5685 equivalentbu108mj15024 mj15025audio amplifier 2n56862sa492sc140mj1000nsp2100
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BU108
Abstract: 2SA1046 driver amplifier tip31 TRANSISTOR BDX54 MJE5190 2SB56 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5191 2N5192* Silicon NPN Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195. *Motorola Preferred Device 4 AMPERE POWER TRANSISTORS
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2n51942n51952n51912n5192+14tip73btip74tip74atip74btip75tip75abu1082sa1046driver amplifier tip31 transistorbdx54mje51902sb56bu326bu100
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BDV65B equivalent
Abstract: buv48 equivalent BU108 tip127 pin details 2SD424 BDX54 BU326 BU100 mje340
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BDV65B PNP BDV64B Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain HFE = 1000 min. @ 5 Adc • Monolithic Construction with Built–in Base Emitter Shunt Resistors
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bdv65bbdv64btip73btip74+15tip74atip74btip75tip75atip75btip75cbdv65b equivalentbuv48 equivalentbu108tip127 pin details2sd424bdx54bu326bu100mje340
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2SA70
Abstract: BU108 2SA1046 2SC7 c 3198 transistor BU806 Complement BDX54 tip142 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6379* High-Power PNP Silicon Transistors *Motorola Preferred Device 50 AMPERE POWER TRANSISTORS PNP SILICON 80, 100, 120 VOLTS 250 WATTS . . . designed for use in industrial–military power amplifier and switching circuit
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2n63792n6274tip73btip74+15tip74atip74btip75tip75atip75b2sa70bu1082sa10462sc7c 3198 transistorbu806 complementbdx54tip142bu326bu100
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automotive ignition tip162
Abstract: 2sc331 2N6556 BU108 2SA648 MJE13009 2SD1815 "cross reference" FT47 MJ1000 mj295
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10012 MJH10012 NPN Silicon Power Darlington Transistor The MJ10012 and MJH10012 are high–voltage, high–current Darlington transistors designed for automotive ignition, switching regulator and motor control applications.
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mj10012mjh10012tip73btip74+14tip74atip74btip75tip75aautomotive ignition tip1622sc3312n6556bu1082sa648mje130092sd1815 "cross referenceft47mj1000mj295
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automotive ignition tip162
Abstract: BU323A equivalent 2SA1046 BC337 rbe BU108 TIP102 Darlington transistor bc337 cross-reference 2SC190 replacement transistor BC337 BU326
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323A NPN Silicon Power Darlington Transistor The BU323A is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. COLLECTOR • VCE Sat Specified at – 40_C = 2.0 V Max. at IC = 6 A.
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bu323a204aatip73btip74+15tip74atip74btip75tip75atip75bautomotive ignition tip162bu323a equivalent2sa1046bc337 rbebu108tip102 darlington transistorbc337 cross-reference2sc190replacement transistor bc337bu326
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