BC337A Search Results

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer PNP/NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC327, BC327A, BC328 PNP BC337, BC337A, BC338 (NPN) TO-92 EBC

BC337A

Contextual Info: BC337A NPN Medium Power Transistor • This device is designed for general purpose amplifier application at collector currents to 800mA. • Sourced from process 38. TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted

BC331

Abstract: BC331 transistor transistor BC331 BC337 bc337-40 npn transistor BC337A BC337-26 TRANSISTOR BC338 BC327 BC327A
Contextual Info: BC337 BC337A BC338 1 PHILIPS INTERNATIONAL SbE D • 7110fl2b OOMllflfl DTX H I P H I N - SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 envelopes, primarily intended for use in driver and output stages of audio amplifiers. The BC337, BC337A, BC338 are complementary to the BC327, BC327A and BC328 respectively.

BC33B

Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. BC337-25 BC337-40 BC337A Electrical Characteristics (Ta=25“C, Unless Otherwise Specified) ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min *c PD (W) (A) @Tc=25°c 50 45 5 0.625 0.5 50 60 45 60 5 5 0.625 0.5

BC338

Abstract: BC337A BC337 BC327 BC327A BC328 BC337-16 DDE7530 DDE7532
Contextual Info: b^E D • bL S3^131 DDE753D 5T4 BC337 BC337A BC338 IAPX N AflER P H I L I P S / D I S C R E T E SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic T O -92 envelopes, p rim a rily intended fo r use in d riv e r and o u tp u t stages o f a udio a m plifiers.

BC337B

Abstract: m 60 n 03 g10 BC327C
Contextual Info: SEM ICO N D U CTOR DICE NPN MEDIUM POWER Volts Volts ZTX653 ZTX453 ZT91 2N1893 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 2N1613 2N1711 ZT90 MPSA05 ZTX650 ZTX450 BFY51 BC337A BC337B BC337C ZTX449 BFY52 ZTX649 + V CES V CE sat ^CBO at at lc Volts Min. Max. mA Volts Volts mA

bC328 philips

Abstract: bc32 transistor BC327A BC327 BC338 BC327-16 BC328 BC337 BC337A BC338 TRANSISTOR
Contextual Info: PHILIPS INTERNATIONAL SbE D BC327 BC327A BC328 711QÖEt. Q D H n Ä 2 bö3 H P H I N • SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in plastic TO-92 envelopes, primarily intended for use in driver and output stages of audio amplifiers. The BC327, BC327A, BC328 are complementary to the BC337, BC337A and BC338 respectively.

pin configuration PNP transistor BC327

Abstract: BC327 BC337 noise figure BC338/BC328 tr bc 337 BC337 pnp transistor BC337A BC327 NPN transistor configuration BC327 pin out bc-337 TRANSISTOR tr bc 337 datasheet
Contextual Info: Continental Device India Limited IS/ISO 9002 Lic# QSC/L-000019.3 An IS/ISO 9002 and IECQ Certified Manufacturer BC 337 BC327 BC337A BC327A BC338 BC328 SILICON PLANAR EPITAXIAL TRANSISTORS NPN PNP TO-92 Plastic Package C BE Transistors For Use in Driver And Output Stages of Audio Amplifiers

bc3378

Abstract: TRANSISTOR BC337-25 PNP BC337A BC337 Philips mar 722 BC337 BC337 sot54 bc337-40 npn transistor BC338 philips NPN general purpose transistor BC337
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC337; BC337A; BC338 NPN general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 10 Philips Semiconductors Product specification

Contextual Info: BC337A25 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)1.2 Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

102 TRANSISTOR

Abstract: BC327 BC328 BC327A TRANSISTOR BC327-40 BC327-16 BC327-25 BC328-16 BC328-25 BC337
Contextual Info: P-N-P transistors in plastic TO-92 variant envelopes, primarily intended for use in driver and output stages of audio amplifiers. The BC327, BC327A, BC328 are complementary to the BC337, BC337A and BC338 respectively. Q UICK REFERENCE D A TA BC327 BC327A BC328

pin configuration PNP transistor BC327

Abstract: BC337 pnp transistor BC327 BC337 noise figure BC327 noise figure BC 114 transistor NPN 337 BC338/BC328 BC327 NPN transistor configuration TRANSISTOR BC 135 BC328 NPN
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company BC 337 BC327 BC337A BC327A BC338 BC328 SILICON PLANAR EPITAXIAL TRANSISTORS NPN PNP TO-92 Plastic Package C BE Transistors For Use in Driver And Output Stages of Audio Amplifiers

bc337-40 npn transistor

Abstract: BC337 bc338 complementary BC337A JA02 BC337-40 BC33840
Contextual Info: BC337 BC337A BC338 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 package, prim arily intended fo r use in driver and ou tput stages of audio amplifiers. The BC337, BC337A, BC338 are complementary to the BC327, BC327A and BC328 respectively.

BC413B

Abstract: BC413C BC414B BC414C BC337-25 BC337-40 BC337A BC338 BC338-16 BC338-25
Contextual Info: TO-92 Plastic Package Transistors NPN _ _ Maxim um Ratings Type No. BC 337-25 ^CEO ^EBO PD (V) Min (V) Min (V) Min (W) 45 5 (A) ^CB 'c e s ^CE (V) (HA) Max @ (V) Max @Tc=25°c 0 .625 'cBO <mA) 0.5 0.1 20 »FE Min BC337A 50 60 45 60 5 5 0.625 0.625 0.5

Contextual Info: BC337AP Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V) I(C) Max. (A)800m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

BC337 pnp transistor

Abstract: TRANSISTOR BC337-25 PNP TRANSISTOR BC337-40 PNP bc3378 BC337 BC337-25 PNP transistor bc338-40 BC337A TRANSISTOR BC337-25 BC337 sot54
Contextual Info: Philips Semiconductors Product specification NPN general purpose transistors BC337; BC337A; BC338 FEATURES PINNING • High current max. 500 mA PIN • Low voltage (max. 60 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector • General purpose switching and amplification,

BC337A

Contextual Info: D BC337 BC337A BC338 ^ 5 3 ^ 3 1 Q027530 5T4 H A P X N AUER PHILIPS/DISCRETE _ / V _ SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 envelopes, primarily intended for use in driver and output stages of audio amplifiers.

pin configuration PNP transistor BC327

Abstract: pin configuration Bc337 BC327 BC327A BC328 BC337 BC337A BC338 BC337 noise BC327 NPN transistor configuration
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer BC337 BC337A BC338 SILICON PLANAR EPITAXIAL TRANSISTORS TO-92 Plastic Package Complementary Transistors For Use in Driver And Output Stages of Audio Amplifiers

BC327

Abstract: BC327-16 BC327-25 BC327A BC328 BC328-16 BC337 BC337A BC338 bC328 philips
Contextual Info: h ^E J> m 1^53^31 GG27S24 2T0 N AMER PHILIPS/DISCRE TE IAPX B C 327 BC327A B C 328 I SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in plastic TO-92 envelopes, prim arily intended fo r use in driver and ou tput stages o f audio amplifiers. The BC327, BC327A, BC328 are complementary to the BC337, BC337A and BC338 respectively.

8C337

Abstract: 8C327 8C337-16 3C337 3C327A BC337A sc337 BC328 BC337 BC338
Contextual Info: !< - BC337^ BC337A BC338 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 variant envelopes, prim arily intended fo r use in driver and o u tp u t stages o f audio amplifiers. The 8C337, BC337A, BC338 are complementary to the 8C327, 3C 327A and BC328 respectively.

Contextual Info: BC337A Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)6.0 V(BR)CBO (V) I(C) Max. (A)500m Absolute Max. Power Diss. (W)800m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

BC337B

Abstract: BC338B BC338C BC327B BC328B BC337C ZTX550 BFV52 ZTX751 BFY50
Contextual Info: ELEC TRIC AL CHARACTERISTICS N.P.N. M E D IU M POW ER h "ht V cbo VcEO ICBC Min. Min. Max.atVcB @ lc Dice Type V V nA V Min. Max. m A ZTX653 ZTX453 ZTX652 ZTX452 M P SA 0 6 ZTX651 ZTX451 BFY50 M P SA 0 5 ZTX650 ZTX450 BFY51 BC337A BC337B BC337C BFV52 BC338A

Contextual Info: Pro Electron Series /% JkJ » \ / w Sem iconductor'" V D e v ice C ase No. S ty le BC327 BC327A BC327-16 BC327-25 2-66 BC328 BC328-25 BC337 BC337A BC337-16 BC337-25 BC338 BC368 D iscrete POWER & Signal Technologies National TO-92 97 TO-92 (97) TO-92 (97)

bc337-40 npn transistor

Abstract: BC337 8H721 bc337a BC338-16 NPN bc338 TRANSISTOR BC337-25 PNP transistor bc337 npn NPN TRANSISTOR BC337 40 transistor BC337-16
Contextual Info: Philips Semiconductors Product specification NPN general purpose transistors BC337; BC337A; BC338 FEATURES PINNING • High current max. 500 mA PIN • Low voltage (max. 60 V). DESCRIPTION 1 APPLICATIONS emitter 2 base 3 collector • General purpose switching and amplification,