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    B58 MARKING CODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5446/BEA
    Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) PDF Buy
    54LS190/BEA
    Rochester Electronics LLC 54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA) PDF Buy
    2910/BQA
    Rochester Electronics LLC 2910 - Microprogram Controller - Dual marked (7801701QA) PDF Buy
    MQ80C186-12/BYA
    Rochester Electronics LLC 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850102YA) PDF Buy
    54L04/BDA
    Rochester Electronics LLC 54L04 - Hex Inverter - Dual marked (M38510/02005BDA) PDF Buy

    B58 MARKING CODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Device marking code B12 B13 B14 B15 B16

    Abstract: MARKING b56 Device marking code B52 marking A78 a80 marking code marking code B49 a64 marking code A45 interface marking code B38 HS032E02B
    Contextual Info: 32MB SO-RIMMTM Module with 128/144 Mb RDRAMs HCD SO-RIMM Memory Module Specification GENERAL DESCRIPTION This document outlines specifications for HCD’s SO-RIMM Module which consists of 128Mb / 144Mb Direct Rambus DRAM devices. HCD supports applications with 600, 700 and 800 MHz speed grades in both ECC and non-ECC


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    128mb144mbhs032n02ehs032n02d+15hs032n02chs032n02bhs032e02ehs032e02dhs032e02chs032e02bdevice marking code b12 b13 b14 b15 b16marking b56device marking code b52marking a78a80 marking codemarking code b49a64 marking codea45 interfacemarking code b38 PDF

    marking code B49

    Abstract: MARKING b56 marking A71 marking A46 B36 Device marking code B12 B13 B14 B15 B16 a80 marking code a64 marking code marking code B38 A45 interface A77 marking
    Contextual Info: 256MB SO-RIMMTM Module with 256/288 Mb RDRAMs HCD SO-RIMM Memory Module Specification GENERAL DESCRIPTION This document outlines specifications for HCD’s SO-RIMM Module which consists of 256Mb / 288Mb Direct Rambus DRAM devices. HCD supports applications with 600, 700 and 800 MHz speed grades in both ECC and non-ECC


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    256mb288mbhs256n08ehs256n08d+15hs256n08chs256n08bhs256e08ehs256e08dhs256e08cmarking code b49marking b56marking a71marking a46 b36device marking code b12 b13 b14 b15 b16a80 marking codea64 marking codemarking code b38a45 interfacea77 marking PDF

    A74 marking

    Abstract: a80 marking code MS18R3266AH0-CT9 a74 marking code diode code B74 marking A32 marking code B38
    Contextual Info: MS18R3266AH0 Preliminary Revision History Version 0.1 November 2003 - Preliminary - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Module Datasheet. Page 0 Rev. 0.1 Nov. 2003 MS18R3266AH0 Preliminary (32Mx18)*6pcs SO-RIMM™ based on 576Mb A-die, 32s banks,32K/32ms Refresh, 2.5V


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    ms18r3266ah0288mbit32mx18576mb+832k/32msa74 markinga80 marking codems18r3266ah0-ct9a74 marking codediode code b74marking a32marking code b38 PDF

    Contextual Info: MS18R3266AH0 Revision History Version 0.1 November 2003 - Preliminary - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Module Datasheet. Version 1.0 (May 2004) - Eliminate "Preliminary" Page 0 Rev. 1.0 May 2004 MS18R3266AH0 (32Mx18)*6pcs SO-RIMM™ based on 576Mb A-die, 32s banks,32K/32ms Refresh, 2.5V


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    ms18r3266ah0288mbit32mx18576mb+132k/32ms PDF

    MARKING CODE B82

    Abstract: a87 marking Marking b66 marking a86 MARKING B83 marking a75
    Contextual Info: MR18R162WAG0 Change History Version 1.0 January 2002 * First copy. * Based on the 1.0 ver. 288Mbit RIMM Module Datasheet Version 1.1 (July 2002) * Based on the 1.0 ver.(January 2002) 288Mbit A-die 32d RIMM Module Datasheet * eliminate "Target" etc. Page 0


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    mr18r162wag0288mbit16mx1832pcs+8288mb16k/32msmarking code b82a87 markingmarking b66marking a86marking b83marking a75 PDF

    a80 marking code

    Abstract: MR18R162WDG0-CM8 B83 004 marking code B38 MR18R162WDG0 MR18R162WDG0-CK8 marking A70 marking code b84
    Contextual Info: MR18R162WDG0 Change History Version 1.0 July 2002 * First copy. * Based on the 1.1 ver.(July 2002) 288Mbit A-die 32d RIMM Module Datasheet Page 0 Version 1.0 July. 2002 MR18R162WDG0 (16Mx18)*32pcs RIMM Module based on 288Mb D-die, 32s banks,16K/32ms Ref, 2.5V


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    mr18r162wdg0288mbit16mx1832pcs+9288mb16k/32msa80 marking codemr18r162wdg0-cm8b83 004marking code b38mr18r162wdg0-ck8marking a70marking code b84 PDF

    a74 marking code

    Abstract: MARKING B82 MARKING B83 a80 marking code B11 marking code Device marking code B12 B13 B14 B15 B16 marking A45 a64 marking code A79 marking code a86 diode
    Contextual Info: MR18R162WDG0 Change History Version 1.0 July 2002 * First copy. * Based on the 1.1 ver.(July 2002) 288Mbit A-die 32d RIMM Datasheet Page 0 Version 1.0 July. 2002 MR18R162WDG0 (16Mx18)*32pcs RIMMTM Module based on 288Mb D-die, 32s banks,16K/32ms Ref, 2.5V


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    mr18r162wdg0288mbit16mx1832pcs+12288mb16k/32msa74 marking codemarking b82marking b83a80 marking codeb11 marking codedevice marking code b12 b13 b14 b15 b16marking a45a64 marking codea79 marking codea86 diode PDF

    Contextual Info: Tilt Tactiles Slides Rotaries Keylocks Programmable Illuminated PB Pushbuttons Rockers Toggles Series LW General Specifications B Electrical Capacity Touch Resistive Load: 10A @ 125V AC, 6A @ 250V AC, or 6A @ 30V DC Inductive Load: 5A @ 125V AC P. F. @ .60


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    lw3122-f3cf-aat107 PDF

    Contextual Info: B Electrical Capacity Resistive Load: Inductive Load: Contact Resistance: Insulation Resistance: Dielectric Strength: Mechanical Life: Electrical Life: Nominal Operating Force: Angle of Throw: Keylocks Housing: Movable Contacts: Stationary Contacts: Base:


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    bronz14lw3122-f3cf-aat107 PDF

    b41 Marking

    Contextual Info: MR18R162WEG0 Change History Version 0.1 January 2004 * First copy. * Based on the 1.0 ver.(July 2002) 288Mbit D-die 32d RIMM Module Datasheet Version 1.0 (May 2004) * Eliminate "Preliminary" Page 0 Version 1.0 May 2004 MR18R162WEG0 (16Mx18)*32pcs RIMM Module based on 288Mb E-die, 32s banks,16K/32ms Ref, 2.5V


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    mr18r162weg0288mbit16mx1832pcs+3288mb16k/32msb41 marking PDF

    A76 MARKING CODE

    Abstract: a77 package marking a80 marking code marking A32 marking A45 marking code B38 MR18R162WEG0-CM8 MARKING B17 MARKING CODE B82 marking a86
    Contextual Info: Preliminary MR18R162WEG0 Change History Version 0.1 January 2004 * First copy. * Based on the 1.0 ver.(July 2002) 288Mbit D-die 32d RIMM Module Datasheet Page 0 Version 0.1 Jan. 2004 Preliminary MR18R162WEG0 (16Mx18)*32pcs RIMM Module based on 288Mb E-die, 32s banks,16K/32ms Ref, 2.5V


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    mr18r162weg0288mbit16mx1832pcs+12288mb16k/32msa76 marking codea77 package markinga80 marking codemarking a32marking a45marking code b38mr18r162weg0-cm8marking b17marking code b82marking a86 PDF

    transistor marking A21

    Abstract: a74 marking code b82 400 B83 004 marking B44 MARKING CODE b48
    Contextual Info: MR18R162WAG0 Change History Version 1.0 January 2002 * First copy. * Based on the 1.0 ver. 288Mbit RDRAMs RIMM Datasheet Version 1.1 (July 2002) * Based on the 1.0 ver.(January 2002) 288Mbit A-die 32d RIMM Datasheet * eliminate "Target" etc. Page 0 Version 1.1 July. 2002


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    mr18r162wag0288mbit16mx1832pcs+8288mb16k/32mstransistor marking a21a74 marking codeb82 400b83 004marking b44marking code b48 PDF

    HYR163249G-653

    Abstract: HYR163249G-840 HYR166449G-653 HYR166449G-845 A17 INFINEON
    Contextual Info: HYR16xx49G 64MB & 128MB Rambus RIMM Modules Direct RDRAM RIMM Modules with 288 Mbit RDRAMs Overview The Direct Rambus RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers,


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    hyr16xx49g128mbhyr163249g-653hyr163249g-840+3hyr166449g-653hyr166449g-845a17 infineon PDF

    Contextual Info: MS16R1622 4/8 AF0-CK8 Preliminary Revision History Version 1.0 (July 2001) - Preliminary - First copy. - Based on the Rambus RIMM Datasheet Rev.1.0. Page 0 Rev.1.0 July 2001 MS16R1622(4/8)AF0-CK8 Preliminary (16Mx16)*2(/4/8)pcs Rambus RIMM based on 256Mb A-die, 32s banks,16K/32ns Ref, 2.5V


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    ms16r162216mx16256mb16k/32ns PDF

    Contextual Info: MS18R1624 8 MN0-CK8 Preliminary Revision History Version 1.0 (May 2001) - First copy. - Based on the 1.1 ver. 256/288Mbit RDRAMs(M-die) base RIMM Datasheet. Version 1.1 (August 2001) * Update based on the latest Rambus RIMM Datasheet Page No. 7 Change Description


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    ms18r1624256/288mbit16mx18288mb+116k/32ns PDF

    H-840

    Abstract: H-745
    Contextual Info: TM RIMM Module with 256/288Mb RDRAMs Preliminary Revision History * Rev. 0.95 Date : 2001.07.23 1. Page2, 7, 8, 10, 12 : Add 2D RIMM part Rev. 0.95 / July.01 1 TM RIMM Module with 256/288Mb RDRAMs Preliminary Overview Key Timing Parameters/Part Numbers The‘Rambus RIMMTM module is a general purpose


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    256/288mbh-840h-745 PDF

    MR16R0824AS0-CG6

    Abstract: MR16R0828AS0-CG6 MARKING CODE B82
    Contextual Info: Preliminary MR16R0824 8 AS0 Change History Version 1.0 (October 2000) - Preliminary - First copy. - Based on the 1.1ver. 128/144Mb RDRAMs(A-die) base Normal RIMM Datasheet. Page 0 Version 1.0 Oct. 2000 Preliminary MR16R0824(8)AS0 (8Mx16)*4(8)pcs Consumer RIMMTM Module based on 128Mb A-die, 32s banks,16K/32ms Ref, 2.5V


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    mr16r0824128/144mb8mx16128mb+416k/32msmr16r0824as0-cg6mr16r0828as0-cg6marking code b82 PDF

    Contextual Info: MS18R1622 4/8 DH0 Revision History Version 1.0 (July 2002) - Based on the 1.1 ver. (July 2002) 288Mbit A-die SO-RIMM Module Datasheet. Page 0 Rev. 1.0 July 2002 MS18R1622(4/8)DH0 (16Mx18)*2(4/8)pcs SO-RIMM™ based on 288Mb D-die, 32s banks,16K/32ms Refresh, 2.5V


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    ms18r1622288mbit16mx18288mb+116k/32ms PDF

    MARKING CODE 11gb

    Contextual Info: MR18R326GAG0 Preliminary Change History Version 0.1 September 2003 - Preliminary * First copy. * Based on the 1.0 ver. (July 2002) 256/288Mbit D-die RIMM Datasheet Page 0 Version 0.1 Sept. 2003 MR18R326GAG0 Preliminary (32Mx18)*16pcs RIMMTM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V


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    mr18r326gag0256/288mbit32mx1816pcs+3576mb32k/32msmarking code 11gb PDF

    marking A26

    Abstract: HYR1612820G-845 HYR1812820G-653 HYR1812820G-745 HYR1812820G-845 HYR1612820G-653 HYR1612820G-745 HYR1612820G-840 HYR1612 A52 LD
    Contextual Info: HYR 16xx20G/HYR 18xx20G Rambus RIMM Modules Direct RDRAM RIMM Modules with 144 Mbit RDRAMs Overview The Direct Rambus RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers,


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    16xx20g/hyr18xx20g256mb128mb+10marking a26hyr1612820g-845hyr1812820g-653hyr1812820g-745hyr1812820g-845hyr1612820g-653hyr1612820g-745hyr1612820g-840hyr1612a52 ld PDF

    MS18R1622AH0-CK8

    Abstract: MS18R1624AH0-CK8 MS18R1628AH0-CK8
    Contextual Info: MS18R1622 4/8 AH0-CK8 Preliminary Revision History Version 1.0 (December 2001) - First copy. - Based on the 1.1 ver. 256/288Mbit RDRAMs(A-die) base RIMM Datasheet. Rev.1.0 Dec. 2001 Page 0 MS18R1622(4/8)AH0-CK8 Preliminary ( 16Mx18)*2(4/8)pcs Rambus RIMM based on 288Mb M-die, 32s banks,16K/32ns Ref, 2.5V


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    ms18r1622256/288mbit16mx18288mb+416k/32nsms18r1622ah0-ck8ms18r1624ah0-ck8ms18r1628ah0-ck8 PDF

    a80 marking code

    Abstract: marking A32 marking A86 marking code B38 samsung electronics logo
    Contextual Info: MR16R0828ER T 0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.0ver. 128Mb D-die Consumer RIMM Module Datasheet. Page 0 Version 1.0 July 2002 MR16R0828ER(T)0 (8Mx16)*8pcs Consumer RIMM Module based on 128Mb E-die, 32s banks,16K/32ms Ref, 2.5V


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    mr16r0828er128mb8mx1616k/32ms+5a80 marking codemarking a32marking a86marking code b38samsung electronics logo PDF

    Contextual Info: MS18R1622 4/8 AH0 Revision History Version 1.0 (December 2001) - First copy. - Based on the 1.1 ver. 256/288Mbit RDRAMs(A-die) base RIMM Datasheet. Version 1.1(July 2002) - Based on the 1.0 ver. 256/288Mbit RDRAMs(A-die) base SO-RIMM Datasheet. - Add 1066MHz-35 binning


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    ms18r1622256/288mbit1066mhz-3516mx18+2288mb16k/32ms PDF

    marking B44

    Abstract: DH0 165
    Contextual Info: MS18R1622 4/8 DH0 Revision History Version 1.0 (July 2002) - Based on the 1.1 ver. 256/288Mbit RDRAMs(A-die) base SO-RIMM Datasheet. Rev. 1.0 July 2002 Page 0 MS18R1622(4/8)DH0 ( 16Mx18)*2(/4/8)pcs SO-RIMM based on 288Mb D-die, 32s banks,16K/32ms Refresh, 2.5V


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    ms18r1622256/288mbit16mx18288mb+316k/32msmarking b44dh0 165 PDF