B53 TRANSISTOR Search Results

IPB029N06N3G

Contextual Info: IPB029N06N3 G Ie\Q IPI032N06N3 G IPP032N06N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 R  , ? >=1H , & Q @D9=9J54 D53 8>? <? 7I 6? B    3 ? >F5BD5BC I9   .( J *&1 Y" *(

D1D5B

Abstract: B175D DIODE ED 99
Contextual Info: IPP070N08N3 G IPI070N08N3 G IPB067N08N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 R  , ? >=1H, & Q @D9=9J54 D53 8>? <? 7I 6? B    3 ? >F5BD5BC   I9 0( J .&/ Y" 0( 6 Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & 

Contextual Info: IPB072N15N3 G IPP075N15N3 G IPI075N15N3 G "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &  V 9H -( J R  , ? >=1H-(     /&* Y" I9 )( 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z#

B55Q

Contextual Info: IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &  V 9H -( J R  , ? >=1H-(     )(&0 Y" 0+ I9 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z#

B52 transistor

Abstract: MARKING B52 b53 SMD transistor b54 2SB736A B53 transistor PT-200 2SD780A b54 marking B52 MARKING
Contextual Info: Transistors IC SMD Type PNP Silicon Epitaxial Transistor 2SB736A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features High DC Current Gain: hFE = 200 TYP. VCE = -1.0 V, IC = -50 mA 1 0.55 Complementary to 2SD780A. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Micro package.

Contextual Info: EMB53 Datasheet Complex Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter DTr1 and DTr2 VCEO -50V IC -100mA R1 4.7kΩ EMT6 EMB53 (SC-107C) l Features 1) Two DTA043T chips in a EMT6 package.

Contextual Info: TRANSISTOR MODULE SQD300AA120 UL;E 76102 M S Q D 3 0 0 A A 1 2 0 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for

Contextual Info: Ordering number: E N 2069A 2SB1140 PN P Epitaxial P lanar Silicon Transistor S M IY O i 20V/5A Switching Applications A p p licatio n s • Strobes, power supplies, relay drivers, lamp drivers: F e a tu re s . Adoption of FBET, MBIT processes. . Low saturation voltage.

transistor 2n3053

Contextual Info: N AMER PHILIPS/DISCRETE b'lE D bbSBTBl 002fll3b Eflb I IAPX 2N30b3 A SILICON PLANAR TRANSISTOR N-P-N transistor in a TO-39 metal envelope designed for medium speed, saturated and non-saturated switching applications for industrial service. QUICK REFERENCE DATA

VN1210L

Contextual Info: VN1210 SERIES N-Channel Enhancement-Mode MOS Transistors TO -92 TO-226AA B O T T O M VIEW PRODUCT SUMMARY VN1210L 120 VN1210M Q V (BR)DSS (V) la PA R T N UM BER >D (A) PACKAGE 10 0.18 TO-92 120 10 0.20 TO-237 Performance Curves: VNDQ12 2 GATE 3 DRAIN TO-237

NTE8316

Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74HC4040 16-Lead DIP, See Diag. 249 12-Stage Binary Counter (CMOS) NTE74HC4053 16-Lead DIP, See Diag. 249 Triple 2-Channel Analog Multiplexer/Demultiplexer (CMOS) B Vcc 1Y r i B Q11 0Y Ü 3 1Z Q Q10

Contextual Info: Philips Semiconductors kb53R31 003213^ 44T IHAPX Product specification NPN 1 GHz wideband transistor £ BFW92 N AUER PHILIPS/DISCRETE b'lE D PINNING DESCRIPTION NPN transistor in a plastic SOT37 envelope. It has a low noise over a wide current range, a very high power

BCX53-6

Abstract: BCX51-6 bcx52-6 BCX51 BCX52 BCX53 AB BCX51 BCX51-10 BCX51-16 BCX52 BCX53 BCX54
Contextual Info: □b53^31 N ANER P H I L I P S / D I S C R E T E ObE QD15bö2 b BCX51 BCX52 BCX53 D SILICON PLANAR EPITAXIAL TRANSISTORS Medium power p-n-p transistors in a miniature plastic envelope intended for applications in thick and thin-film circuits. These transistors are intended for general purposes as well as for use in driver stages

Contextual Info: bbSB^Bl QQ24453 MM•=! H A P X N AUER PHILIPS/DISCRETE BC846 BC847 BC848 b7E D J V. SILICON PLANAR EPITAXIAL TRANSISTORS General purpose n-p-n transistors in a plastic SOT-23 package. QUICK REFERENCE DATA BC846 Collector-emitter voltage V gE = 0 BC847 BC848

TRANSISTOR BC 553

Abstract: T151 T810
Contextual Info: 1DI3OMA-O5O 30a POWER TRANSISTOR MODULE Features • h F E ^ 'S l ' High DC Current Gain • Kfl'Sijv,' • Insulated Type High speed switching • f f liÊ • A pplications Pow er Switching • M otor Brake in Inverter • Maximum Ratings and Characteristics

Contextual Info: OP A3 OPA 79 OPA379 OPA2379 OPA4379 OPA 4379 2379 www.ti.com . SBOS347D – NOVEMBER 2005 – REVISED MAY 2008

B52 transistor

Contextual Info: 1DI3OMA-O5O 30a POWER TRANSISTOR MODULE • 4 M F e a tu re s ■ • h F E *''lS t' High DC Current Gain • ;*<'>-?■ v y x t ° —W jS v .' • 16» » High speed sw itching Insulated Type ■ f f l i É ’ A p p lic a t io n s Power Sw itching •

B53 transistor

Abstract: BSV16-10 2N4405
Contextual Info: BSV16-10 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -6 0 Vdc Collector-Emitter Voltage VCES -6 0 Vdc Collector-Base Voltage VCBO -6 0 Vdc Emitter-Base Voltage v EBO -5 .0 Vdc Collector Current — Continuous 'c -1 .0 Ade Total Device Dissipation @ T ^ = 25°C

Mextram

Abstract: GP 004 DIODE 101C 220H 320H PNP TRANSISTor experiments transistor XM
Contextual Info: Paper 9.3 Experience with the New Com pact M E X T R A M M odel for Bipolar Transistors H.C. de GraafF, W.J. Kloosterman, J.A.M. Geelen and M.C.A.M. Koolen Philips Research Laboratories P.O. Box 80000 5600 JA Eindhoven, The Netherlands A bstract Here Qte and Qtc are the emitter and collector de­

Contextual Info: N AMER PHILIPS/DISCRETE b 'lE • D bbS3T31 D D E ^ D ll L APX T IE BLV36 VHF LINEAR PUSH-PULL POWER TRANSISTOR Two NPN silicon planar epitaxial transistor sections in one envelope to be used as a push-pull amplifier. This device is primarily intended for use in linear VHF television transmitters and transposers vision or

Contextual Info: HARRIS SEtlICOND SECTOR Ì l ì H A R R IS VM J s e m .c o n d u c t o r bflE » Bi M3GE271 OGSOEbM 660 * H A S HGTP10N40C1D, HGTP10N40E1D HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes December 1993 Package

xr-1095

Contextual Info: EXAR XR-1095 Advanced Information Seven Band Graphic Equalizer Filter and Display Driver with Micro-Controller Interface GENERAL DESCRIPTION PIN ASSIGNMENT The XR-1095 is a single chip graphic equalizer and display driver containing sw itched-capacitor band­

SOT230

Abstract: 234 optocoupler CNX62A BS415 BS7002 T30 transistor
Contextual Info: Product specification P h ilip s Sem icon du ctor« High-voltage optocoupler CNX62A FEATURES • High current transfer ratio and a low saturation voltage, making the devices suitable for use with TTL integrated circuits • High degree of A C and DC Insulation 3750 V (RMS and

Contextual Info: XR-1095 Seven Band G raphic Equalizer C Y iO D f m Filter ancl D isPlaV Driver with ^Controller Interface .the analog plus company September 1996-4 FEATURES APPLICATIONS • Single Chip Equalizer and Display Driver • Graphic Equalizers • Accurate Switched-Capacitor Filters