IPD320N20N3 Search Results
IPD320N20N3 Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IPD320N20N3 G | Infineon Technologies | N-Channel MOSFETs (20V - 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 200.0 V; RDS (on) (max) (@10V): 32.0 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 34.0 A; | Original | 326.86KB | 9 | ||
| IPD320N20N3GATMA1 | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 200V 34A | Original | 532.7KB | |||
| IPD320N20N3GBTMA1 | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 200V 34A TO252-3 | Original | 532.7KB |
IPD320N20N3 Price and Stock
Infineon Technologies AG IPD320N20N3GATMA1Trans MOSFET N-CH 200V 34A 3-Pin(2+Tab) DPAK T/R |
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IPD320N20N3GATMA1 | 7,188 | 1 |
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IPD320N20N3GATMA1 | Tape & Reel | 42 Weeks | 2,500 |
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IPD320N20N3GATMA1 | Cut Strips | 7,188 | 23 Weeks | 1 |
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IPD320N20N3GATMA1 | Bulk | 1 |
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IPD320N20N3GATMA1 | 2,500 |
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IPD320N20N3GATMA1 | 24 Weeks | 2,500 |
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IPD320N20N3GATMA1 | 16,599 |
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Infineon Technologies AG IPD320N20N3 GTrans MOSFET N-CH 200V 34A 3-Pin(2+Tab) DPAK T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPD320N20N3 G | 2,330 | 20 |
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IPD320N20N3 G | 2,330 | 19 |
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Infineon Technologies AG IPD320N20N3GTrans MOSFET N-CH 200V 34A 3-Pin(2+Tab) DPAK T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPD320N20N3G | 64 |
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IPD320N20N3G | 1,864 |
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IPD320N20N3G | 17,500 |
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Infineon Technologies AG IPD320N20N3GBTMA1Power Field-Effect Transistor, 34A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPD320N20N3GBTMA1 | 9,706 |
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IPD320N20N3GBTMA1 | 15,870 |
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Infineon Technologies AG IPD320N20N3GXTPower Field-Effect Transistor, 34A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPD320N20N3GXT | 812 |
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IPD320N20N3 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: IPD320N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) • Very low on-resistance R DS(on) VDS 200 V RDS(on),max 32 mW ID 34 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant |
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ipd320n20n3iec61249-2-21pg-to252-3320n20n | |
ua900Contextual Info: IPD320N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 200 V RDS(on),max 32 mW ID 34 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant |
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ipd320n20n3iec61249-2-21pg-to252-3320n20n+1 | |
IPD320N20N3
Abstract: marking EB5
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ipd320n20n37865ae5marking eb5 | |
IPD320N20N3
Abstract: 320N20N IEC61249-2-21 JESD22 IPD320N20N3 G
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ipd320n20n3iec61249-2-21pg-to252-3320n20n+3 | |
igbt welding machine scheme
Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
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igbt welding machine schemeikw40n120h3aircon l1smd diode schottky code marking sj+6 | |
PX3544
Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
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lead519b152-h9345-g2-x-7600px3544px7510+8 | |
TLE4957C
Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
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