IPP057N06N3 Search Results
IPP057N06N3 Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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IPP057N06N3 G |
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N-Channel MOSFETs (20V - 250V); Package: PG-TO220-3; Package: TO-220; VDS (max): 60.0 V; RDS (on) (max) (@10V): 5.7 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 80.0 A; | Original | 339.75KB | 10 | ||
IPP057N06N3GHKSA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 80A TO220-3 | Original | 690.85KB | |||
IPP057N06N3GXKSA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 80A TO220-3 | Original | 686.02KB |
IPP057N06N3 Price and Stock
Infineon Technologies AG IPP057N06N3GXKSA1MOSFET N-CH 60V 80A TO220-3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPP057N06N3GXKSA1 | Tube | 500 |
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IPP057N06N3GXKSA1 | Tube | 550 |
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IPP057N06N3GXKSA1 | 460 | 67 |
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IPP057N06N3GXKSA1 | 242 | 1 |
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IPP057N06N3GXKSA1 | 150 | 1 |
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IPP057N06N3GXKSA1 | Tube | 460 | 0 Weeks, 1 Days | 1 |
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IPP057N06N3GXKSA1 | 422 |
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Infineon Technologies AG IPP057N06N3GHKSA1MOSFET N-CH 60V 80A TO220-3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPP057N06N3GHKSA1 | Tube | 500 |
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Buy Now | ||||||
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IPP057N06N3GHKSA1 | 602 |
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Infineon Technologies AG IPP057N06N3GXKSA1 (OPTIMOS)Mosfet, N Ch, 60V, 80A, To-220-3; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:80A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Msl:- Rohs Compliant: Yes |Infineon IPP057N06N3GXKSA1 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPP057N06N3GXKSA1 (OPTIMOS) | Bulk | 1 |
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IPP057N06N3 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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057N06N
Abstract: 054N06N IEC61249-2-21 JESD22 PG-TO220-3 ua358
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IPB054N06N3 IPP057N06N3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 054N06N 057N06N 057N06N 054N06N IEC61249-2-21 JESD22 PG-TO220-3 ua358 | |
Contextual Info: IPB054N06N3 G IPP057N06N3 G Ie\Q 3 Power-Transistor Product Summary Features Q#451<6?B89786B5AE5>3ICG9D389>71>4CI>3 B53 Q @D9=9J54D538>?<?7I6?B 3?>F5BD5BC V 9H .( J R ,?>=1H,& -&, Y I9 0( 6 |
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IPB054N06N3 IPP057N06N3 CG9D389 381B75à D5CD54 D1B75Dà 931D9? | |
057N06N
Abstract: 054N06N JESD22 PG-TO220-3
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IPB054N06N3 IPP057N06N3 PG-TO263-3 PG-TO220-3 054N06N 057N06N 057N06N 054N06N JESD22 PG-TO220-3 | |
diode ED 1B
Abstract: marking EB diode 5D j marking
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IPB054N06N3 IPP057N06N3 diode ED 1B marking EB diode 5D j marking | |
igbt welding machine scheme
Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
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PX3544
Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
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lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J | |
TLE4957C
Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
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