057N06N Search Results
057N06N Price and Stock
Infineon Technologies AG IPB057N06NATMA1MOSFET N-CH 60V 17A/45A D2PAK |
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IPB057N06NATMA1 | Digi-Reel | 356 | 1 |
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IPB057N06NATMA1 | Reel | 18 Weeks | 1,000 |
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IPB057N06NATMA1 | 1,116 |
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IPB057N06NATMA1 | Cut Tape | 1,650 | 1 |
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IPB057N06NATMA1 | 4,792 | 1 |
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IPB057N06NATMA1 | 1 |
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IPB057N06NATMA1 | Cut Tape | 5,739 | 0 Weeks, 1 Days | 1 |
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IPB057N06NATMA1 | 1,000 | 19 Weeks | 1,000 |
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IPB057N06NATMA1 | 1,000 | 1 |
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Infineon Technologies AG IPP057N06N3GHKSA1MOSFET N-CH 60V 80A TO220-3 |
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IPP057N06N3GHKSA1 | Tube | 500 |
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IPP057N06N3GHKSA1 | 602 |
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Infineon Technologies AG IPA057N06N3GXKSA1MOSFET N-CH 60V 60A TO220-3-31 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPA057N06N3GXKSA1 | Tube | 500 |
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IPA057N06N3GXKSA1 | Tube | 500 |
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IPA057N06N3GXKSA1 | Bulk | 1 |
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IPA057N06N3GXKSA1 | 790 | 1 |
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IPA057N06N3GXKSA1 | 49 | 1 |
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IPA057N06N3GXKSA1 | 8,500 |
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Infineon Technologies AG IPP057N06N3GXKSA1MOSFET N-CH 60V 80A TO220-3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPP057N06N3GXKSA1 | Tube | 500 |
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IPP057N06N3GXKSA1 | Tube | 550 |
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IPP057N06N3GXKSA1 | Bulk | 1 |
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IPP057N06N3GXKSA1 | 242 | 1 |
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IPP057N06N3GXKSA1 | 150 | 1 |
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IPP057N06N3GXKSA1 | Tube | 460 | 0 Weeks, 1 Days | 1 |
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Infineon Technologies AG IPB057N06NMOSFETs N-Ch 60V 45A D2PAK-2 |
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IPB057N06N | 810 |
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057N06N Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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057N06N
Abstract: 054N06N IEC61249-2-21 JESD22 PG-TO220-3 ua358
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IPB054N06N3 IPP057N06N3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 054N06N 057N06N 057N06N 054N06N IEC61249-2-21 JESD22 PG-TO220-3 ua358 | |
057N06NContextual Info: Type 057N06N OptiMOSTM Power-Transistor Product Summary Features VDS 60 V RDS on ,max 5.7 mW • Superior thermal resistance ID 45 A • N-channel, normal level Qoss 32 nC • Qualified according to JEDEC1) for target applications Qg(0V.10V) 27 nC • Optimized for synchronous rectification |
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IPB057N06N IEC61249-2-21 PG-TO263-3 057N06N 10dangerous 057N06N | |
IPB057N06N
Abstract: ipb057n
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IPB057N06N IEC61249-2-21 PG-TO263-3 057N06N 50K/W IPB057N06N ipb057n | |
Contextual Info: Type 057N06N OptiMOSTM Power-Transistor Product Summary Features VDS 60 V RDS on ,max 5.7 mW • Superior thermal resistance ID 45 A • N-channel, normal level Qoss 32 nC • Qualified according to JEDEC1) for target applications Qg(0V.10V) 27 nC • Optimized for synchronous rectification |
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IPB057N06N IEC61249-2-21 PG-TO263-3 057N06N | |
IPA057N06N3
Abstract: 057N06N IPA057N06N IPA057N06N3 G JESD22 PG-TO220-3-31 IPA057N06N3G
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IPA057N06N3 PG-TO220-3-31 057N06N 057N06N IPA057N06N IPA057N06N3 G JESD22 PG-TO220-3-31 IPA057N06N3G | |
057N06N
Abstract: 054N06N JESD22 PG-TO220-3
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IPB054N06N3 IPP057N06N3 PG-TO263-3 PG-TO220-3 054N06N 057N06N 057N06N 054N06N JESD22 PG-TO220-3 |