IPB023N06N3 Search Results
IPB023N06N3 Datasheets (2)
Infineon Technologies
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IPB023N06N3 G | Infineon Technologies | N-Channel MOSFETs (20V - 250V); Package: PG-TO263-7; Package: D2PAK 7pin (TO-263 7pin); VDS (max): 60.0 V; RDS (on) (max) (@10V): 2.3 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 140.0 A; | Original | 320.02KB | 9 | ||
| IPB023N06N3GATMA1 | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 140A TO263-7 | Original | 672.26KB |
IPB023N06N3 Price and Stock
Infineon Technologies AG
Infineon Technologies AG IPB023N06N3GTrans MOSFET N-CH 60V 140A 7-Pin(6+Tab) D2PAK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB023N06N3G | 382 | 1 |
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IPB023N06N3G | 305 |
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| IPB023N06N3G | 281 |
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IPB023N06N3G | 321 |
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Infineon Technologies AG IPB023N06N3GATMA1Power Field-Effect Transistor, 140A I(D), 60V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB023N06N3GATMA1 | 10,880 |
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