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    IPI024N06N3 Search Results

    IPI024N06N3 Datasheets (3)

    Infineon Technologies
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IPI024N06N3 G
    Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 60.0 V; RDS (on) (max) (@10V): 2.4 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 120.0 A; Original PDF 530.77KB 11
    IPI024N06N3GHKSA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 120A TO262-3 Original PDF 998.21KB
    IPI024N06N3GXKSA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 120A Original PDF 1MB
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    IPI024N06N3 Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IPI024N06N3GXKSA1

    Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI024N06N3GXKSA1)
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    Avnet Americas IPI024N06N3GXKSA1 Tube 500
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    Vyrian IPI024N06N3GXKSA1 12,997
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    Infineon Technologies AG IPI024N06N3GHKSA1

    Power Field-Effect Transistor, 120A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian IPI024N06N3GHKSA1 7,585
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