IPI024N06N3 Search Results
IPI024N06N3 Datasheets (3)
Infineon Technologies
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IPI024N06N3 G | Infineon Technologies | N-Channel MOSFETs (20V - 250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 60.0 V; RDS (on) (max) (@10V): 2.4 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 120.0 A; | Original | 530.77KB | 11 | ||
| IPI024N06N3GHKSA1 | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 120A TO262-3 | Original | 998.21KB | |||
| IPI024N06N3GXKSA1 | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 120A | Original | 1MB |
IPI024N06N3 Price and Stock
Infineon Technologies AG
Infineon Technologies AG IPI024N06N3GXKSA1Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI024N06N3GXKSA1) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPI024N06N3GXKSA1 | Tube | 500 |
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IPI024N06N3GXKSA1 | 12,997 |
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Infineon Technologies AG IPI024N06N3GHKSA1Power Field-Effect Transistor, 120A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPI024N06N3GHKSA1 | 7,585 |
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Get Quote | |||||||