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IPB260N06N3 Datasheets (2)

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Infineon Technologies

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IPB260N06N3 G		Infineon Technologies	N-Channel MOSFETs (20V - 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); V_DS (max): 60.0 V; R_{DS (on)} (max) (@10V): 26.0 mOhm; R_{DS (on)} (max) (@4.5V): -; I_D (max): 27.0 A;	Original	PDF	340.41KB	10
IPB260N06N3GATMA1		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 27A TO263-3	Original	PDF	691.47KB

IPB260N06N3 Price and Stock

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Infineon Technologies AG


Infineon Technologies AG IPB260N06N3G
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	IPB260N06N3G		72			1 $1.19 10 $0.95 100 $0.71 1000 $0.71 10000 $0.71	Buy Now
Rochester Electronics	IPB260N06N3G		10		1	1 - 10 - 100 $0.41 1000 $0.34 10000 $0.30	Buy Now
Infineon Technologies AG IPB260N06N3GATMA1 Power Field-Effect Transistor, 27A I(D), 60V, 0.0257ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	IPB260N06N3GATMA1		9,843			1 - 10 - 100 - 1000 - 10000 -	Get Quote

IPB260N06N3 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
260N06N Abstract: IEC61249-2-21 JESD22 PG-TO220-3 IPP260N06N3 Contextual Info: Type IPB260N06N3 G IPP260N06N3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max 26 mΩ ID 27 A • Excellent gate charge x R DS(on) product (FOM)	Original	ipb260n06n3 ipp260n06n3 iec61249-2-21 pg-to263-3 +3pg-to220-3 260n06n jesd22	PDF
260N06N Abstract: DIODE D27 JESD22 PG-TO220-3 20TP Contextual Info: IPB260N06N3 G IPP260N06N3 G Type OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max 26 mΩ ID 27 A • Excellent gate charge x R DS(on) product (FOM)	Original	ipb260n06n3 ipp260n06n3 pg-to263-3 pg-to220-3 +4260n06n diode d27 jesd22 20tp	PDF
marking 9D Abstract: G973 marking eb5 EB5 MARKING Contextual Info: IPB260N06N3 G IPP260N06N3 G Ie\Q "%&$!"# 3 Power-Transistor Product Summary Features Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 Q @D9=9J54 D53 8>? <? 7I 6? B 3 ? >F5BD5BC V 9H .( J R 9H"[Z#$YMd . Y" I9 / 6 Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( &	Original	ipb260n06n3 ipp260n06n3 65ae5 marking 9d +3g973 marking eb5 eb5 marking	PDF
igbt welding machine scheme Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3 Contextual Info: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and	Original	igbt welding machine scheme ikw40n120h3 aircon l1 smd diode schottky code marking sj +6transistor marking code 12w sot-23 24v application with ice3ar0680jz induction cooker fault finding ipw65r041 igw40n60h3 spw55n80c3	PDF
PX3544 Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J Contextual Info: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly	Original	lead519 b152-h9345-g2-x-7600 px3544 px7510 +8px3560 ice2as01 equivalent px3540 primarion px3540 ice3br0665j primarion px3560 ice3br4765 ice3br1765j	PDF