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    IPP260N06N3 Search Results

    IPP260N06N3 Datasheets (2)

    Infineon Technologies
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IPP260N06N3 G
    Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TO220-3; Package: TO-220; VDS (max): 60.0 V; RDS (on) (max) (@10V): 26.0 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 27.0 A; Original PDF 340.41KB 10
    IPP260N06N3GXKSA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 27A TO220-3 Original PDF 691.47KB
    SF Impression Pixel

    IPP260N06N3 Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IPP260N06N3GXKSA1

    MOSFET N-CH 60V 27A TO220-3
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    DigiKey IPP260N06N3GXKSA1 Tube
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    Vyrian IPP260N06N3GXKSA1 10,206
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    Infineon Technologies AG IPP260N06N3G

    Power Field-Effect Transistor, 27A I(D), 60V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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    Rochester Electronics IPP260N06N3G 276 1
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