BGY113A Search Results

MBD677

Abstract: BGY113A BGY113B SC09 VS4 TRANSISTOR Philips DC Power Amplifier 380
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BGY113A; BGY113B UHF amplifier modules Preliminary specification Supersedes data of April 1994 File under Discrete Semiconductors, SC09 1996 May 29 Philips Semiconductors Preliminary specification UHF amplifier modules BGY113A; BGY113B

Contextual Info: Philips Components Datasheet status Preliminary specification date of issue May 1991 BGY113A/113B UHF amplifier modules PINNING - SOT288D DESCRIPTION A range of RF power amplifier modules designed for use in portable communications equipment with nominal 7.5 V electrical battery

VS4 TRANSISTOR

Abstract: Philips DC Power Amplifier 380 TT 2222 npn 2322*195 transistor tt 2222 r5 t85 BGY113A BGY113B SOT288D mgd502
Contextual Info: Preliminary specification Philips Semiconductors UHF amplifier modules BGY113A; BGY113B PINNING - SOT288D FEATURES • 7.5 V nominal supply voltage DESCRIPTION PIN • 7 W output power 1 RF input • Easy control of output power by DC voltage. 2 VSi 3 VC APPLICATIONS

BGY113A

Abstract: "Amplifier Modules" BGY113B FERROXCUBE 4330 Outline T39 uhf amplifier BGY113C MSB043
Contextual Info: Philips Semiconductors Preliminary specification UHF amplifier modules BGY113A; BGY113B; BGY113C FEATURES DESCRIPTION • 7.5 V nominal supply voltage The BGY113A, BGY113B and BGY113C are UHF power amplifier modules. • 7 W output power Each module consists of four NPN silicon P lanartransistor

BGY113B

Abstract: BGY113A BGY113C FERROXCUBE 4330
Contextual Info: Preliminary specification Philips Semiconductors UHF amplifier modules BGY113A; BGY113B; BGY113C FEATURES DESCRIPTION • 7.5 V nominal supply voltage The BGY113A, BGY113B and BGY113C are UHF power amplifier modules. • 7 W output power Each module consists of four NPN silicon Planartransistor

Contextual Info: N AUER PHILIPS/DISCRETE b^E » • bb53*J31 0030363 bS3 Philips Components BGY113A/113B Datasheet status P r e lim in a r y s p e c ific a tio n date of issue May 1991 UHF amplifier modules PINNING - SOT288D DESCRIPTION A range of RF power amplifier modules designed for use in

BGY113A

Abstract: BGY113B
Contextual Info: N AUER PHILIPS/DISCRETE t.'ÌE » • tbS3*î31 Q03G5Û3 b53 H A P X Philips Components BGY113A/113B Datasheet status Preliminary specification date of issue May 1991 UHF amplifier modules PINNING - SOT288D DESCRIPTION A range of RF power amplifier modules designed for use in

bgy113f

Abstract: BGY113E SOT321 RF Power Modules BGY113G BGY204 BGY113B BGY133 SOT246 SOT342
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET Selection guide RF Power Modules and Transistors for Mobile Phones 1996 Jun 19 File under Discrete Semiconductors, SC09 Philips Semiconductors RF Power Modules and Transistors for Mobile Phones Selection guide VHF CAR MOBILE

Contextual Info: RF Power Modules INDEX SELECTION GUIDE GENERAL CONTENTS Page 5 8 12 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

bf0262a

Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Contextual Info: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A

RF Power Modules

Abstract: BGY47 Philips Semiconductors RF Power Modules BGY145B BGY110E SOT-246 BGY110F "RF Power Modules" GP 132
Contextual Info: Philips Semiconductors RF power modules Type number survey INTRODUCTION In this alphanumeric list we present all RF power modules mentioned in this handbook, together with the most important data. TYPE NUMBER ENVELOPE Vs V f Pl (MHz) (W) Gp (dB) PAGE BGY32

SOT262

Abstract: power amplifier blf278 BLF378 BGY47 321 SOT BGY145 sot183 BGY43 SOT246
Contextual Info: 66 RF/Microwave Devices RF Power MOS Transistors Package Outline Type No. cont. Output Power Sync (W) VDS (V) f (MHz) Power Gain (dB) ^im (dB) >D (mA) 13 r -52 -52 3000 2 x 4600 50 TV TRANSPOSERS (band 3, f = 174-230 MHz, Class A Operation) BLF346 BLF348

BFG87

Abstract: BSF17 BSF17W Philips BFQ bipolar transistor blt81 driver circuit BGY46B BFE505 T119 Transistor BFQ43 bgy132
Contextual Info: Philips Sem iconductors Selection guide Selection list GENERAL For further information, refer to Data Handbook SC08a “R F Bipolar transistors", to Data Handbook SC09 “R F Power Modules”and to Data Handbook SC14 “R F Wideband Transistors, Video Transistors and Modules"

Zener Diode 3v 400mW

Abstract: transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec TRANSISTOR mosfet BF998
Contextual Info: INDEX Order Code Description Page Number – Philips Semiconductors 1 485-068 DS750 Development Kit 1 527-749 87C750 Hardware Kit 1 – Philips Semiconductors Data Communications UART Product Line 2 790-590 80C51 In a Box 3 – 80C51 Family Features 3 –